2SK3658 - Toshiba - Product.Network

2SK3658

2006-11-17

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)

2SK3658

DC−DC Converter, Relay Drive and Motor Drive

Applications

z Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.)

z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)

z Enhancement−mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain−source voltage VDSS 60 V

Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V

Gate−source voltage VGSS ±20 V

DC (Note 1) ID 2

Drain current

Pulse (Note 1) IDP 6

Drain power dissipation (Tc = 25°C) PD 0.5 W

Drain power dissipation (Note 2) PD 1.5 W

Channel temperature Tch 150 °C

Storage temperature range Tstg −55 to 150 °C

Note 1: Please use devices on condition that the channel temperature is

below 150°C.

Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W

This transistor is an electrostatic sensitive device.

Please handle with caution.

Marking

Week of manufacture

Year of manufacture: last decimal digit of the year of manufacture

Lot no.

Product no. (abbr.)

Z H

Unit: mm

JEDEC ⎯

JEITA SC-62

TOSHIBA 2-5K1B

Weight: 0.05 g (typ.)

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2SK3658

2006-11-17

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA

Drain cut−off current IDSS VDS = 60 V, VGS = 0 V — — 100 μA

Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V

VGS = 4 V, ID = 1 A — 0.33 0.44

Drain−source ON resistance RDS (ON)

VGS = 10 V, ID = 1 A — 0.23 0.30

Ω

Forward transfer admittance |Yfs| VDS = 10 V, ID = 1 A 1.0 2.0 — S

Input capacitance Ciss — 140 —

Reverse transfer capacitance Crss — 20 —

Output capacitance Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

— 65 —

Rise time tr — 140 —

Turn−on time ton — 210 —

Fall time tf — 470 —

Switching time

Turn−off time toff — 1600 —

Total gate charge (gate−source

plus gate−drain) Qg — 5.0 —

Gate−source charge Qgs — 3.6 —

Gate−drain (“miller”) Charge Qgd

VDD ≈ 48 V, VGS = 10 V, ID = 2 A

— 1.4 —

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

(Note 1)

IDR — — — 2 A

Pulse drain reverse current

(Note 1)

IDRP — — — 6 A

Forward voltage (diode) VDSF I

DR = 2 A, VGS = 0 V — — −1.5 V

Reverse recovery time trr — 100 — ns

Reverse recovery charge Qrr

IDR = 2 A, VGS = 0 V

dIDR / dt = 50 A / μs — 40 — nC

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2SK3658

2006-11-17

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2SK3658

2006-11-17

http://store.iiic.cc/

2SK3658

2006-11-17

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2SK3658

2006-11-17

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must

also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,

the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA

Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are

solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the

appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any

information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other

referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO

LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.

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