DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
NPN SILICON RF TRANSISTOR
NE68118 / 2SC5012
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD
The mark shows major revised points.
Document No. PU10504EJ01V0DS (1st edition)
(Previous No. P10400EJ2V0DS00)
Date Published July 2004 CP(K)
FEATURES
• High Gain Bandwidth Product (fT = 9 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
• 4-pin super minimold Package
ORDERING INFORMATION
Part Number Quantity Supplying Form
NE68118-A
2SC5012-A
50 pcs (Non reel)
NE68118-T1-A
2SC5012-T1-A
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC65 mA
Total Power Dissipation Ptot Note 150 mW
Junction Temperature Tj150 °C
Storage Temperature Tstg −65 to +150 °C
Note Free air
JEITA
Part No.
DISCONTINUED
Data Sheet PU10504EJ01V0DS
2
NE68118 / 2SC5012
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
scitsiretcarahC CD
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA − − 1.0
μ
A
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 1.0
μ
A
h niaG tnerruC CD FE Note 1 VCE = 8 V, IC = 20 mA 50 100 250 −
scitsiretcarahC FR
Gain Bandwidth Product fT VCE = 8 V, IC = 20 mA − 9.0 – GHz
Insertion Power Gain ⏐S21e⏐2 VCE = 8 V, IC = 20 mA, f = 1.0 GHz 13 15 − dB
V FN erugiF esioN CE = 8 V, IC = 7 mA, f = 1.0 GHz − 1.2 2.5 dB
Reverse Transfer Capacitance Cre Note 2 VCB = 10 V, IE = 0 mA, f = 1.0 MHz − 0.25 0.8 pF
Notes 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank EB FB GB
Marking R36 R37 R38
hFE Value 50 to 100 80 to 160 125 to 250
DISCONTINUED
Data Sheet PU10504EJ01V0DS 3
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC Current Gain h
FE
Collector Current I
C
(mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
250
200
150
100
50
025 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
2.0
1.0
1
0.5
0.1
0.2
5 10 20 50
f = 1 MHz
2
50
0.5 1.00
40
30
20
10
V
CE
= 8 V 30
20
10
2 8 120 4 6 10
A
μ
160 A
μ
140 A
μ
120 A
μ
100 A
μ
80 A
μ
60 A
μ
40 A
μ
20 A
μ
I
B
= 200
180
A
μ
500
200
1
100
10
20
50
10 100
V
CE
= 8 V
10
8
1
6
0
2
4
5 10 50 100
V
CE
= 8 V
f = 1 GHz
2 20
Remark The graphs indicate nominal characteristics.
NE68118 / 2SC5012
DISCONTINUED
Data Sheet PU10504EJ01V0DS
4
Frequency f (GHz)
MAXIMUM AVAILABLE GAIN/INSERTION
POWER GAIN vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Collector Current I
C
(mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure NF (dB)
0.1
50
0
10
0.5 1.0 5.0
V
CE
= 8 V
I
C
= 20 mA
20
30
40
MAG
|S
21e
|
2
1
20
0
10
5 10 50 100
V
CE
= 8 V
f = 1 GHz
2 20
5
4
1
3
0
1
2
5 10 50
V
CE
= 8 V
f = 1 GHz
022
Maximum Available Gain MAG (dB)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
NE68118 / 2SC5012
DISCONTINUED
Data Sheet PU10504EJ01V0DS 5
PACKAGE DIMENSIONS
4-PIN SUPER MINIMOLD (UNIT: mm)
0.9±0.1
0.15
+0.1
–0.05
0.3
0 to 0.1
3
1.30
2.0±0.2
1.25
0.650.60
4
21
2.1±0.2
1.25±0.1
0.650.65
0.4
+0.1
–0.05
0.3
+0.1
–0.05
0.3
+0.1
–0.05
0.3
+0.1
–0.05
1. Collector
2. Emitter
3. Base
4. Emitter
PIN CONNECTIONS
NE68118 / 2SC5012
DISCONTINUED
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DISCONTINUED
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Authorized Distributor
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NE68118-T1-A 2SC5012-T1-A 2SC5012-A