B P| Radiation sensitive devices Dispositifs sensibles aux radiations - Strahlungsempfindliche Elemente RATINGS AND CHARACTERISTICS TYPE DESCRIPTION (at Tamb = 28C, unless otherwise stated) NUMBER soe . : min Additional information Symbol] Value |unit |typ MEASURING CONDITIONS max BP100 | PHOTO-DIODE VR 1 v max Outlines : NS216 Vo 150 mV |minjat E = 100 Ix Ig 50 pA typjat E = 1000 1x s 35 nA/lx |minjat Is Apk 0,85 ym | typ tr 4 us typ|at 60% of Is Ci 1 nF typjat Vp = 0 A 7 m2 typ E with colour temperature of 2400 K I 10 pA maxfat VR = 1V; E=0 BP101 |NPN PHOTO-TRANSISTOR VCEO 32 Vv max Outlines : 110a, with lens on top VEBO 5 Vo {max Ic 25 pA max Iph (at VCE = 5 V3; E = 1000 Ix ) Tj 125 C |max - Prot} 200 mW = |max Group I 63 = 125 uA Ico} 100 nA |maxlat VCE = 30 V; E = 0 Il 100 - 200 pA III : 160 ~ 320 pA *pk 0.78; vm jmax a 000 Ix + Open b IV: 250 ~ 500 vA treet 10 us tmaxlat RL = 1 kQ; E = 1000 1x ; Open base E with colour temperature of 2850 K BP102 |WPN PHOTO-TRANSISTOR VCEO 32 v max Outlines : =110a, with lens on top VEBO 5 Vv s{max _ pe Ic 25 mA = jmax Iph (at VCE=5 V ; E= 1000 1x ) Tj 125 c Imax Group I 160 - 320 pA Prot | 200 mW max II : 250 - 500 yA VCEsat 0,4 Vjmaxjat Ic = 0,5 mA ; Ip = 25 pA 3 E = 0 TiI : 400 - 800 vA Apk 0,78 um typ Tv + 630 ~ 1250 vA tr=tg}] 10 us jmaxjat RL = 1 k@ 3 I, = 1 mA; Voce = 25 V E with colour temperature of 2856 K BP1IC3 |NPN PHOTO-TRANSISTOR Vono 100 Vv max Outlines : =110a, with Lens on top Vv 7 v max EBO Io 100 Vv max I h (at Vor 5 V3; E= 1000 lx ) Ty 80 C max P Poot | 200 mW |max|at T=25C Group I 160 - 320 vA loro 5 nA max jat Vog 30 V3 E 0 Group II : 250 ~ 500 pA Esat 0,15 Vv max Jat Io = 500yuA 31,5 25uA ; E=0O Group III: 400 ~ 800 uA : 850 nm max Group IV : 630 1250nA t PX, rm tr 5 us Imax fat R, = 1 k2 E with colour temperature of 2856 K BP104 |Si-PIN PHOTO DIODE YR 15 v max Outlines : NS365 Prot 150 mW max fat T = 25C Ss 35 nA/1x jmin fat VR = 5V Le 850 nm max I, 5 vA at Ey = 100 1x tat, 125 ns at RR, = 1D 5 YR = OV; A = 950nm Cy 55 pF at V, = OV; f= IMiz ; E=0 IR 30 nA max Jat v2 = 10V IBPW12 |PN PHOTO-VOLTAIC CELL VR 10 v max Outlines : 110c, with plane window Vo 250 mV |minjat E = 1000 1x Ig 7 vA Iminfat E = 1000 lx Apk 0,75) pm typ A 2,8 | mm |typ . Cj 1 nF typjat VR = OV E with colour temperature of 2856 K tr=tr 3 us typjat RL = 1 k& 3 Iph = 100 WA 1 | v