Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS 30V
▼ Simple Drive Requirement RDS(ON) 80mΩ
▼ Fast Switching ID15A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 4.8 ℃/W
Rthj-a 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data & specifications subject to change without notice
200811193
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
1
Thermal Data
Parameter
Pulsed Drain Current150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.21
Storage Temperature Range
Total Power Dissipation 26
-55 to 150
Continuous Drain Current, VGS @ 10V 15
Continuous Drain Current, VGS @ 10V 9
Drain-Source Voltage 30
Gate-Source Voltage +20
AP15N03GH/J
Parameter Rating
RoHS-compliant Product
TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP15N03GJ) is
available for low-profile applications.
GDSTO-251(J)
GDSTO-252(H)
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 -V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=8A - - 80 mΩ
VGS=4.5V, ID=6A - - 100 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=8A - 7 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V ` - 1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+20V - - +100 nA
QgTotal Gate Charge2ID=8A - 4.6 nC
Qgs Gate-Source Charge VDS=24V - 1.1 nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 3 nC
td(on) Turn-on Delay Time2VDS=15V - 4.9 - ns
trRise Time ID=8A - 22.5 - ns
td(off) Turn-off Delay Time RG=3.4Ω,VGS=10V - 12.2 - ns
tfFall Time RD=1.9Ω- 3.3 - ns
Ciss Input Capacitance VGS=0V - 160 - pF
Coss Output Capacitance VDS=25V - 107 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 32 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 15 A
ISM Pulsed Source Current ( Body Diode )1--50
A
VSD Forward On Voltage2IS=15A, VGS=0V - - 1.3 V
Notes:
1.Pulse width limited by Maximum junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
3.Surface mounted on 1 in2 copper pad of FR4 board
AP15N03GH/J
AP15N03GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
10
20
30
40
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC 10V
8.0V
6.0V
VG=4.0V
0
10
20
30
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
10V
8.0V
6.0V
VG=4.0V
TC=150oC
40
50
60
70
80
90
246810
VGS Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=8A
TC=25oC
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=8A
VG=10V
0
2
4
6
8
10
12
0 0.4 0.8 1.2 1.6
VSD (V)
IS (A)
Tj=25oCTj=150oC
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
Tj , Junction Temperature( oC)
VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP15N03GH/J
0
4
8
12
16
0246810
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =16V
VDS =20V
VDS =24V
ID=8A
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
5V
QGS QGD
QG
Charge
0
100
200
300
400
500
1 5 9 13 17 21 25 29
VDS (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
S
ingle Pulse
100us
1ms
10ms
100ms
DC
Package Outline : TO-252
Millimeters
MIN NOM MAX
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
F 2.20 2.63 3.05
F1 0.50 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-252
Laser Marking
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
e
e
D
D1
E2
E1
F
B1 F1
A2
A3 C
R : 0.127~0.381
(
0.1mm
Part Number
Package Code
15N03GH
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
LOGO
Meet Rohs requirement
for low voltage MOSFET only
E3
5
Package Outline : TO-251
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.90 1.20 1.50
B1 0.40 0.60 0.80
B2 0.60 0.85 1.05
c0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 4.80 5.20 5.50
E 6.70 7.00 7.30
E1 5.40 5.60 5.80
E2 1.30 1.50 1.70
e---- 2.30 ----
F 7.00 8.30 9.60
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-251
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
Millimeters
15N03GJ
YWWSSS
Part Numbe
r
Package Code
A
c1
A1
c
e
D
E2
E1 E
B1
B2
F
D1
e
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW ：Week
SSS ：Sequence
LOGO
meet Rohs requirement
for low voltage MOSFET only
6
