Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES e SMD encapsulation * Gold metallization ensures excellent refiabifity. 4 APPLICATIONS e Hand-held radio equipment in the 900 MHz c communication band. b DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a | plastic SOT223 SMD package. 1 | 2 3 MAMO043 -1 PINNING - SOT223 Top view PIN SYMBOL DESCRIPTION 1 e emitter 2 b base 3 e emitter . ae . Fig.1 Simplified outline and symbol. 4 c collector QUICK REFERENCE DATA RF performance at T, < 60 C in a common emitter test circuit (see Fig.7). f Vce PL Gp ne MODE OF OPERATION (MHz) (Vv) (w) (dB) (%) 75 1.2 26 260 CW, class-B narrow band 900 6 1.2 typ. 6.5 typ. 77 1996 May 09 714Philips Semiconductors Product specification UHF power transistor BLT81 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vcso collector-base voltage open emitter - 20 Vv Vceo collector-emitter voltage open base - 9.5 Vv Veso emitter-base voltage open collector - 2.5 Vv Ico collector current (DC) - 500 mA Ic(av) average collector current - 500 mA Prot total power dissipation Ts = 110 C; note 1 - 2 WwW Tig storage temperature 65 +150 C Tj operating junction temperature - 175 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Rihj-s thermal resistance from junction to soldering point | Prot = 2 W; Ts = 110 C; note 1 32 KAV Note to the Limiting values and Thermal characteristics 1. T, is the temperature at the soldering point of the collector pin. MACOS4 (A) 10-1 Vee () T, = 110C. Fig.2 DC SOAR. 1996 May 09 715Philips Semiconductors Product specification UHF power transistor BLT81 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Viarycao | collector-base breakdown voltage open emitter; lc = 1 MA 20 - ~ Vv Vipryceo | collector-emitter breakdown voltage | open base; Io = 10 mA 9.5 - - Vv Vieryeso | emitter-base breakdown voltage open collector; Ip = 0.1 mA 2.5 - - Vv loes collector leakage current Vce = 10 V; Vepg = 0 - - 0.1 mA Nee DC current gain Voce = 5 V; Ip = 300 mA; note 1; 25 - ~ Cy collector capacitance Vos = 7.5 V; le = ig = 0; f= 1 MHz; | - 2.7 4 pF Cre feedback capacitance Veg = 7.5 Vi Ic = 0; f= 1 MHz - 1.7 3 pF Note 1. Measured under pulsed conditions: tp < 200 us; 6 < 0.02. MRCO90 6 MRCO066 Cy (pF) 4 lh > _ 2 ol | 0 100 200 360 400 0 2 4 8 8 10 Ig (mA) Vc (VY) Vor = 7.5 V; ty $ 200 ys; 8 < 0.02; T; = 25C. Ig = ig = 0; f = 1 MHz; T; = 25 C. Fig.3 DC current gain as a function of collector Fig.4 Collector capacitance as a function of current; typical values. collector-base voltage; typical values. 1996 May 09Philips Semiconductors Product specification UHF power transistor BLT81 APPLICATION INFORMATION RF performance at T, < 60 C in a common emitter test circuit (see note 1 and Fig.7). f Vce PL Gp Ne MODE OF OPERATION (MHz) (V) (w) (dB) (%) > > 7.5 1.2 26 260 CW, class-B narrow band 900 typ. 8 typ. 77 6 1.2 typ. 6.5 typ. 77 Note 1. T, is the temperature at the soldering point of the collector pin. Ruggedness in class-AB operation The BLT81 is capable of withstanding a load mismatch corresponding to VSWR = 50: 1 through all phases under the following conditions: f = 900 MHz; Vce = 9 V; PL = 1.2 W; T, < 60 C. (1) Voge =7.5V. (2) Voe=6V. 0.4 08 1.2 Class-B; f = 900 MHz; T, < 60 C. (3) Voge = 7.5 V. (4) Vom =6V. 1.6 MRCO88 100 2.0 PL (W) Fig.5 Power gain and collector efficiency as functions of load power; typical values. 25 (W) 2.0 0.5 Class-B; f = 900 MHz; T, < 60 C. (1) Voge = 7.5 V. MACOS3 | (2) J i 300 (2) Vce=6V. 400 500 Pin (mW) Fig.6 Load power as a function of input power; typical values. 1996 May 09Philips Semiconductors Product specification UHF power transistor BLT81 Test circuit information 50.0 input 50 Q output i i , 7 MEA899 Fig.7 Common emitter test circuit for class-B operation at 900 MHz. 1996 May 09 718Philips Semiconductors Product specification UHF power transistor BLT81 List of components used in test circuit (see Figs 7 and 8) COMPONENT DESCRIPTION VALUE DIMENSIONS | CATALOGUE No. C1, C14 multilayer ceramic chip capacitor; note 1 | 100 pF C2 multilayer ceramic chip capacitor; note 1 | 3 pF C3, C5, C11, C13. | film dielectric trimmer 1.4 to 5.5 pF 2222 809 09004 C4 multilayer ceramic chip capacitor; note 1 | 5.6 pF C6, C7, C10 multilayer ceramic chip capacitor; note 1 | 5.1 pF c8 multilayer ceramic chip capacitor; note 1 | 3.6 pF cg multilayer ceramic chip capacitor; note 1 | 220 pF C12 multilayer ceramic chip capacitor; 1 nF L1 stripline; note 2 50 Q length 26.6 mm width 4.85 mm L2 10 turns enamelled 0.6 mm copper wire | 250 nH int. dia. 4.5 mm leads 2x 5mm L3, L9 grade 3B Ferroxcube wideband 4312 020 36640 HF choke L4 stripline; note 2 50 2 length 18 mm width 4.85 mm L5 stripline; note 2 75 Q length 3.5 mm width 2.5 mm L6 stripline; note 2 50 2 length 10 mm width 4.85 mm L7 4 turns enamelled 0.6 mm copper wire | 65 nH int. dia. 4.5 mm leads 2x 5mm L8 Stripline; note 2 50 Q length 15 mm width 4.85 mm 10 Stripline; note 2 50 Q length 24.6 mm width 4.85 mm R1, R2 metal film resistor 10 0, 0.25 W Notes 4. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (e, = 2.2); thickness 4g inch; thickness of the copper sheet 35 um. 1996 May 09 719ps Semiconductors Product specification UHF power transistor BLT81 Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side fo the ground plane are made by means of fixing screws and copper foil straps under the emitter feads. Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7. Sane Raw OG 720Philips Semiconductors Product specification UHF power transistor BLT81 MACOS 800 840 880 920 960 1000 f (MHz) Class-B; Vcr = 7.5 V; PL = 1.2 W; T, s 60 C. Fig.9 Input impedance as a function of frequency (series components); typical values. MACOg2 0 800 840 880 920 960 1000 t (MHz) Class-B; Vce = 7.5 V; PL = 1.2 W; T, < 60 C. Fig.10 Load impedance as a function of frequency (series components); typical values. MACOBD 800 840 aso 920 960 1000 f (MHz) Glass-B; Vce = 7.5 V; P_ = 1.2 W; T, $ 60C. Fig.11 Power gain as a function of frequency; typical values. Zz ZL MBA4S1 Fig.12 Definition of transistor impedance. 1996 May 09 721