March 2011 Doc ID 18270 Rev 1 1/7
7
TPDVxx40
40 A high voltage Triacs
Features
■On-state current (IT(RMS)): 40 A
■Max. blocking voltage (VDRM/VRRM): 1200 V
■Gate current (IGT): 200 mA
■Commutation @ 10 V/µs: up to 142 A/ms
■Noise immunity: 500 V/µs
■insulated package:
– 2,500 V rms (UL recognized: E81734).
Description
The TPDVxx40 series use a high performance
alternistor technology.
Featuring very high commutation levels and high
surge current capability, this family is well adapted
to power control on inductive load (motor,
transformer...)
TOP3 insulated
A2
A1
G
A2
A1
G
Table 1. Device summary
Parameter TPDV640RG TPDV840RG TPDV1240RG
Blocking voltage VDRM/VRRM 600 V 800 V 1200 V
On-state current IT(RMS) 40 A
Gate current IGT 200 mA
www.st.com
Characteristics TPDVxx40
2/7 Doc ID 18270 Rev 1
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
IT(RMS) On-state rms current (180° conduction angle) Tc = 75 °C 40 A
ITSM
Non repetitive surge peak on-state
current
tp = 2.5 ms
Tj = 25 °C
590
Atp = 8.3 ms 370
tp = 10 ms 350
I2tI
2t value for fusing tp = 10 ms Tj = 25 °C 610 A2S
dI/dt Critical rate of rise of on-state current
IG = 500 mA , dIG/dt = 1 A/µs
Repetitive F = 50 Hz 20 A/µs
Non repetitive 100
VDRM
VRRM
Repetitive peak off-state voltage
TPDV640
Tj = 125 °C
600
VTPDV840 800
TPDV1240 1200
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125 °C
TLMaximum lead temperature for soldering during 10s at 2mm from case 260 °C
VINS(RMS)(1) Insulation rms voltage 2500 V
1. A1, A2, gate terminals to case for 1 minute
Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant Value Unit
IGT VD = 12 V DC, RL = 33 ΩI - II - III MAX. 200 mA
VGT MAX. 1.5 V
VGD VD = VDRM RL = 3.3 kΩ T
j = 125 °C I - II - III MIN. 0.2 V
tgt VD = VDRM IG = 500 mA dIG/dt = 3 A/µs I - II - III TYP. 2.5 µs
IH (1) IT = 500 mA Gate open MAX. 50 mA
ILIG = 1.2 x IGT I - III TYP. 100 mA
II 200
dV/dt Linear slope up to:
VD = 67 % VDRM Gate open Tj = 125 °C MIN. 500 V/µs
VTM (1) ITM = 35 A tp = 380 µs MAX. 1.8 V
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C MAX. 20 µA
Tj = 125 °C 8 mA
(dI/dt)c (1) (dV/dt)c = 200 V/µs Tj = 125 °C MIN. 35
A/ms
(dV/dt)c = 10 V/µs 142
1. For either polarity of electrode A2 voltage with reference to electrode A1.
TPDVxx40 Characteristics
Doc ID 18270 Rev 1 3/7
Table 4. Gate characteristics (maximum values)
Symbol Parameter Value Unit
PG(AV) Average gate power dissipation 1 W
PGM Peak gate power dissipation tp = 20 µs 40 W
IGM Peak gate current tp = 20 µs 8 A
VGM Peak positive gate voltage tp = 20 µs 16 V
Table 5. Thermal resistance
Symbol Parameter Value Unit
Rth(j-a) Junction to ambient 50 °C/W
Rth(j-c) DC Junction to case for DC 1.2 °C/W
Rth(j-c) AC Junction to case for 360 °Conduction angle (F = 50 Hz) 0.9 °C/W
Figure 1. Max. rms power dissipation versus
on-state rms current (F = 50 Hz).
(curves limited by (dI/dt)c)
Figure 2. Max. rms power dissipation and
max. allowable temperatures
(Tamb and Tcase) for various Rth
P(W)
I (A)
T(RMS)
α= 180°
α= 120°
α= 90°
40
50
60
30
20
10
0
0 5 10 15 20 25 30 35 40
α= 30°
α= 60°
180°
α
α
T (°C)
amb
0 20 40 60 80 100 120 140
125
85
75
95
115
105
P(W) T (°C)
case
40
50
60
30
20
10
0
R = 0.75°C/W
th
R = 0.5°C/W
th
R = 0.25°C/W
th
R = 0°C/W
th
Figure 3. On-state rms current versus case
temperature
Figure 4. Relative variation of thermal
impedance versus pulse duration
I (A)
T(RMS)
30
40
50
20
10
0
025 7550 100 125
T (°C)
case
α= 180°
K=[Z /R
th(j-c) th(j-c)]
t (s)
p
Z
th(j-c)
Z
th(j-a)
1.00
0.10
0.01
0.0
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
Characteristics TPDVxx40
4/7 Doc ID 18270 Rev 1
Figure 9. Safe operating area below curve
Figure 5. Relative variation of gate trigger
current and holding current versus
junction temperature
Figure 6. Non repetitive surge peak on-state
current versus number of cycles
I,I,I[T] /
GT H L j I ,I ,I [T =25°C]
GT H L j
T (°C)
j
I
GT
I
H
& I
L
2.5
2
1.5
1
0.5
0
-20-30-40 0 10-10 20 4030 50 60 70 80 90 100 110 120 130
I (A)
TSM
200
250
300
350
150
100
50
0
1 10 100 1000
t =10ms
p
One cycle
Number of cycles
T initial=25°C
j
Figure 7. Non-repetitive surge peak on-state
current for a sinusoidal pulse and
corresponding values of I2t
Figure 8. On-state characteristics (maximum
values)
I (A), I t (A s)
TSM 22
100
10000
1000
12510
t (ms)
p
I t
2
I
TSM
T initial = 25°C
j
I (A)
TM
1000
100
10
1123456
V (V)
TM
V =1.02V
R =12m
T max.:
j
t0
dΩ
Tj=max
T =25°C
j
(dV/dt)c(V/µs)
1000
100
10
1
(dI/dt)c(A/ms)
T initial = 25°C
j
1100 1000
TPDVxx40 Package information
Doc ID 18270 Rev 1 5/7
2 Package information
●Epoxy meets UL94,V0
●Cooling method: C (by conduction)
●Recommended torque value: 0.9 to 1.2 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6. TOP3 insulated dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 1.45 1.55 0.057 0.061
C 14.35 15.60 0.565 0.614
D 0.5 0.7 0.020 0.028
E 2.7 2.9 0.106 0.114
F 15.8 16.5 0.622 0.650
G 20.4 21.1 0.815 0.831
H 15.1 15.5 0.594 0.610
J 5.4 5.65 0.213 0.222
K 3.4 3.65 0.134 0.144
ØL 4.08 4.17 0.161 0.164
P 1.20 1.40 0.047 0.055
R 4.60 typ. 0.181 typ.
R
H
K
G
F
E
D
B
A
C
JJ
P
ØL
Ordering information TPDVxx40
6/7 Doc ID 18270 Rev 1
3 Ordering information
4 Revision history
Table 7. Ordering information
Order code Marking Package Weight Base qty Delivery mode
TPDV640RG TPDV640
TOP3
insulated 4.5 g 30 TubeTPDV840RG TPDV840
TPDV1240RG TPDV1240
Table 8. Document revision history
Date Revision Changes
30-mar-2011 1 First issue.
TPDVxx40
Doc ID 18270 Rev 1 7/7
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2011 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
