TPDVxx40 40 A high voltage Triacs Features A2 On-state current (IT(RMS)): 40 A Max. blocking voltage (VDRM/VRRM): 1200 V Gate current (IGT): 200 mA Commutation @ 10 V/s: up to 142 A/ms Noise immunity: 500 V/s insulated package: - 2,500 V rms (UL recognized: E81734). G Description A1 A1 A2 The TPDVxx40 series use a high performance alternistor technology. G TOP3 insulated Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) Table 1. Device summary Parameter Blocking voltage VDRM/VRRM TPDV640RG TPDV840RG TPDV1240RG 600 V 800 V 1200 V 40 A On-state current IT(RMS) Gate current IGT March 2011 200 mA Doc ID 18270 Rev 1 1/7 www.st.com 7 Characteristics TPDVxx40 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol IT(RMS) Parameter On-state rms current (180 conduction angle) Tc = 75 C ITSM tp = 8.3 ms Tj = 25 C t dI/dt VDRM VRRM 2 TL A I t value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 500 mA , dIG/dt = 1 A/s Repetitive F = 50 Hz 20 Non repetitive 100 TPDV640 600 Repetitive peak off-state voltage A 350 Tj = 25 C A2S 610 A/s TPDV840 Tj = 125 C 800 TPDV1240 Tstg Tj 40 370 tp = 10 ms I2 Unit 590 tp = 2.5 ms Non repetitive surge peak on-state current Value V 1200 Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 C 260 C 2500 V Maximum lead temperature for soldering during 10s at 2mm from case VINS(RMS)(1) Insulation rms voltage 1. A1, A2, gate terminals to case for 1 minute Table 3. Electrical Characteristics (Tj = 25 C, unless otherwise specified) Symbol IGT VGT VGD tgt IH (1) Test conditions Quadrant VD = 12 V DC, RL = 33 VD = VDRM Unit MAX. 200 mA MAX. 1.5 V I - II - III MIN. 0.2 V I - II - III TYP. 2.5 s MAX. 50 mA I - II - III RL = 3.3 k Tj = 125 C VD = VDRM IG = 500 mA dIG/dt = 3 A/s IT = 500 mA Value Gate open I - III IL dV/dt VTM (1) IDRM IRRM (dI/dt)c (1) IG = 1.2 x IGT Linear slope up to: VD = 67 % VDRM Gate open ITM = 35 A II Tj = 125 C tp = 380 s VDRM = VRRM Tj = 25 C mA 200 MIN. 500 V/s MAX. 1.8 V 20 A 8 mA MAX. Tj = 125 C (dV/dt)c = 200 V/s (dV/dt)c = 10 V/s 35 Tj = 125 C 1. For either polarity of electrode A2 voltage with reference to electrode A1. 2/7 100 TYP. Doc ID 18270 Rev 1 MIN. A/ms 142 TPDVxx40 Table 4. Characteristics Gate characteristics (maximum values) Symbol Parameter PG(AV) Value Unit 1 W Average gate power dissipation PGM Peak gate power dissipation tp = 20 s 40 W IGM Peak gate current tp = 20 s 8 A VGM Peak positive gate voltage tp = 20 s 16 V Value Unit Junction to ambient 50 C/W Rth(j-c) DC Junction to case for DC 1.2 C/W Rth(j-c) AC Junction to case for 360 Conduction angle (F = 50 Hz) 0.9 C/W Table 5. Thermal resistance Symbol Parameter Rth(j-a) Figure 1. Max. rms power dissipation versus Figure 2. on-state rms current (F = 50 Hz). (curves limited by (dI/dt)c) P(W) Max. rms power dissipation and max. allowable temperatures (Tamb and Tcase) for various Rth P(W) 60 Tcase(C) 60 = 180 Rth = 0.25C/W 50 75 50 Rth = 0.75C/W = 120 40 40 Rth = 0C/W 85 Rth = 0.5C/W = 90 30 30 95 20 105 = 60 20 = 30 180 10 IT(RMS)(A) 115 10 Tamb(C) 125 0 0 0 5 Figure 3. 10 15 20 25 30 35 40 On-state rms current versus case temperature 0 20 Figure 4. IT(RMS)(A) 40 60 80 100 120 140 Relative variation of thermal impedance versus pulse duration K=[Zth(j-c)/Rth(j-c)] 50 1.00 = 180 Zth(j-c) 40 0.10 30 Zth(j-a) 20 0.01 10 Tcase(C) tp(s) 0 0 25 50 75 100 125 0.0 1E-3 Doc ID 18270 Rev 1 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 3/7 Characteristics Figure 5. TPDVxx40 Relative variation of gate trigger Figure 6. current and holding current versus junction temperature IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25C] Non repetitive surge peak on-state current versus number of cycles ITSM(A) 2.5 350 300 2 tp=10ms 250 One cycle IGT 1.5 200 Tj initial=25C 1 150 IH & IL 100 0.5 50 Number of cycles Tj(C) 0 0 -40 -30 -20 -10 Figure 7. 0 10 20 30 40 50 60 70 80 1 90 100 110 120 130 10 Non-repetitive surge peak on-state Figure 8. current for a sinusoidal pulse and corresponding values of I2t 2 100 1000 On-state characteristics (maximum values) ITM(A) 2 ITSM(A), I t (A s) 1000 10000 Tj initial = 25C Tj=max 100 1000 ITSM I2t Tj=25C 10 100 1 Figure 9. 1 2 5 10 1 2 3 Safe operating area below curve (dV/dt)c(V/s) 1000 Tj initial = 25C 100 10 (dI/dt)c(A/ms) 1 4/7 Tj max.: Vt0=1.02V Rd=12m VTM(V) tp(ms) 1 100 Doc ID 18270 Rev 1 1000 4 5 6 TPDVxx40 2 Package information Package information Epoxy meets UL94,V0 Cooling method: C (by conduction) Recommended torque value: 0.9 to 1.2 N*m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 6. TOP3 insulated dimensions Dimensions Ref. H R Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 J 5.4 5.65 0.213 0.222 K 3.4 3.65 0.134 0.144 OL 4.08 4.17 0.161 0.164 P 1.20 1.40 0.047 0.055 A B OL K F P G C J J D E R Doc ID 18270 Rev 1 4.60 typ. 0.181 typ. 5/7 Ordering information 3 Ordering information Table 7. 4 Ordering information Order code Marking TPDV640RG TPDV640 TPDV840RG TPDV840 TPDV1240RG TPDV1240 Package Weight TOP3 insulated 4.5 g Revision history Table 8. 6/7 TPDVxx40 Document revision history Date Revision 30-mar-2011 1 Changes First issue. 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