Sep.1998
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free-wheel
diode power devices.
Features:
uComplete Output Power
Circuit
uGate Drive Circuit
uProtection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
Applications:
uInverters
uUPS
uMotion/Servo Control
uPower Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM150RSA060 is a 600V,
150 Ampere Intelligent Power Mod-
ule.
Type Current Rating VCES
Amperes V olts (x 10)
PM 150 60
Dimensions Inches Millimeters
A 4.33±0.04 110.0±1.0
B 3.74±0.02 95.0±0.5
C 3.50±0.04 89.0±1.0
D 3.27 83.0
E 2.91±0.02 74.0±0.5
F 2.44 62.0
G 1.28 32.6
H 1.24 31.6
J 1.02 26.0
K 0.94 24.0
L 0.87 +0.06/-0.0 22.0 +1.5/-0.0
M 0.79 20.0
N 0.76 19.4
P 0.75 19.0
Q 0.708 17.98
R 0.670 17.02
Dimensions Inches Millimeters
S 0.67 17.0
T 0.52 13.2
U 0.39 10.0
V 0.276 7.0
W 0.30 7.5
X 0.24 6.0
Y 0.24 Rad. Rad. 6.0
Z 0.22 Dia. Dia. 5.5
AA Metric M5 M5
AB 0.127 3.22
AC 0.10 2.6
AD 0.08 2.0
AE 0.07 1.8
AF 0.06 1.6
AG 0.02±0.01 0.5±0.3
Outline Drawing and Circuit Diagram
MITSUBISHI INTELLIGENT POWER MODULES
PM150RSA060
FLA T -BASE TYPE
INSULATED PACKAGE
T
AC
1.
2.
3.
4.
5.
6.
7.
8.
9.
V
V
V
V
V
V
V
10.
11.
12.
13.
14.
15.
16.
U
U
VV
W
W
WPC
UPI
VPI
WPI
NC
NI
P
N
P
P
N
N
UPC
FO
VVPC
17.
18.
19.
WFO
O
VF
OUF
B
S
M
M
AD
AG
AG K J J
E
UU
U
AB
Q
AB
R
F
A
U
D
X
PX
W
W
C
78 9
10
11 13 151234 56
N
VW U
BP
AA - THD (6 TYP.)
Z - DIA. (4 TYP.)
AD (15 TYP.)
12 14 16 18
17 19
Y (4 TYP.)
N
AE
G H L
AF
V
2.54 MM DIA. (2 TYP.)
0.5 MM SQ. PIN
(19 TYP.)
BR
V
VCC
SI
GND GND
OUT UPI
V
UFO
UP
UPC
FO
IN
VCC
SI
GND GND
OUT
FO
IN
VCC
SI
GND GND
OUT
FO
IN
V
V
FO
V
V
FO
VPI
V
VP
VPC
WPI
W
WP
WPC
VCC
SI
GND GND
OUT
FO
IN
VCC
SI
GND GND
OUT
FO
IN
UN
VCC
SI
GND GND
OUT
FO
IN
V
V
W
NV
NI
N
NC
TEMP
FO
PUVWN
VCC
SI
GND GND
OUT
FO
IN
B
BR
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Sep.1998
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol PM150RSA060 Units
Power Device Junction Temperature Tj-20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC-20 to 100 °C
Mounting Torque, M5 Mounting Screws — 1.47~1.96 N · m
Mounting Torque, M5 Main Terminal Screw — 1.47~1.96 N · m
Module Weight (Typical) — 550 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C) VCC(prot.) 400 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
Control Sector
Supply V oltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC)V
D20 Volts
Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN · Br-VNC)V
CIN 20 Volts
Fault Output Supply V oltage (U FO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC)V
FO 20 Volts
Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal) IFO 20 mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts
Collector Current, (TC=25°C) IC150 Amperes
Peak Collector Current, (TC=25°C) ICP 300 Amperes
Supply Voltage (Applied between P - N) VCC 450 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 500 Volts
Collector Dissipation PC500 Watts
Brake Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts
Collector Current, (TC=25°C) IC50 Amperes
Peak Collector Current, (TC=25°C) ICP 100 Amperes
Supply Voltage (Applied between P - N) VCC 450 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 500 Volts
Collector Dissipation PC312 Watts
Diode Forward Current IF50 Amperes
Diode DC Reverse Voltage VR(DC) 600 Volts
MITSUBISHI INTELLIGENT POWER MODULES
PM150RSA060
FLA T-BASE TYPE
INSULATED PACKAGE
http://store.iiic.cc/
Sep.1998
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Sector
Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C, VD=15V 210 300 — Amperes
Over Current Trip Level Brake Part 65 88 — Amperes
Short Circuit T rip Level Inverter Part SC -20°C ≤ T ≤ 125°C, VD=15V — 420 — Amperes
Short Circuit Trip Level Brake Part — 132 — Amperes
Over Current Delay Time toff(OC) VD = 15V — 10 — µs
Over Temperature Protection OT T rip Level 111 118 125 °C
OTrReset Level — 100 — °C
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
UVrReset Level — 12.5 — V olts
Supply V oltage VDApplied between VUP1-VUPC, 13.5 15 16.5 Volts
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Circuit Current IDVD = 15V, VCIN = 15V, VN1-VNC —5272mA
V
D
= 15V, VCIN = 15V, VXP1-VXPC —1318mA
Input ON Threshold Voltage V th(on) Applied between 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) UP-VUPC, VP-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts
UN · VN · WN · Br-VNC
PWM Input Frequency fPWM 3-φ Sinusoidal — 15 20 kHz
Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V — 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 — ms
Brake Sector
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 50A, — 2.7 3.5 Volts
Tj = 25°C
VD = 15V, VCIN = 0V, IC = 50A, — 2.5 3.4 Volts
Tj = 125°C
Diode Forward V oltage VFM IF = 50A, V D = 15V, VCIN = 15V — 1.7 2.5 Volts
Collector Cutoff Current ICES VCE = VCES, Tj = 25°C——1mA
V
CE = VCES, Tj = 125°C——10mA
MITSUBISHI INTELLIGENT POWER MODULES
PM150RSA060
FLA T-BASE TYPE
INSULATED P ACKAGE
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Sep.1998
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
IGBT Inverter Sector
Collector Cutoff Current ICES VCE = VCES, Tj = 25°C——1mA
V
CE = VCES, Tj = 125°C——10mA
Diode Forward V oltage VEC -IC = 150A, VD = 15V, VCIN = 15V — 2.2 3.3 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 150A, T j = 25°C — 1.8 2.7 Volts
VD = 15V, VCIN = 0V, IC = 150A, — 1.75 2.63 V olts
Tj = 125°C
Inductive Load Switching Times ton 0.4 0.8 2.0 µs
trr VD = 15V, VCIN = 0 ↔ 15V — 0.15 0.3 µs
tC(on) VCC = 300V, IC = 150A — 0.4 1.0 µs
toff Tj = 125°C — 2.0 2.9 µs
tC(off) — 0.6 1.2 µs
Thermal Characteristics
Characteristic Symbol Condition Min. T yp. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT — — 0.25 °C/Watt
Rth(j-c)F Each Inverter FWDi — — 0.47 °C/Watt
Rth(c-f)Q Each Brake IGBT — — 0.4 °C/Watt
Rth(c-f)F Each Brake FWDi — — 1.0 °C/Watt
Contact Thermal Resistance Rth(c-f) Case to Fin Per Module, — — 0.027 °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply V oltage VCC Applied across P-N Terminals 0 ~ 400 Volts
VDApplied between VUP1-VUPC, 15 ± 1.5 Volts
VN1-VNC, VVP1-VVPC, VWP1-VWPC
Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts
Input OFF V oltage VCIN(off) UP, VP, WP, UN, VN, WN, Br4.0 ~ VDVolts
PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz
Minimum Dead Time tdead Input Signal ≥ 2.5 µs
MITSUBISHI INTELLIGENT POWER MODULES
PM150RSA060
FLA T-BASE TYPE
INSULATED PACKAGE
http://store.iiic.cc/
Sep.1998
0
1.0
2.0
3.0
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, I
C
, (AMPERES)
SATURATION VOLTAGE V
CE(sat)
, (VOLTS)
0 50 200100 150
2.5
1.5
0.5
V
D
= 15V
V
CIN
= 0V
T
j
= 25
o
C
T
j
= 125
o
C
0
1.0
2.0
3.0
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SUPPLY VOLTAGE, V
D
, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE
V
CE(sat)
, (VOLTS)
01214161820
2.5
1.5
0.5
I
C
= 150A
V
CIN
= 0V
T
T
j
= 25
o
C
T
j
= 125
o
C
0 1.0
0
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
2.0
50
100
150
0.5 1.5
V
D
= 17V
13
15
T
j
= 25
o
C
V
CIN
= 0V
10
1
10
2
10
3
10
-1
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIMES, t
on
, t
off
, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
t
on
10
0
10
1
t
off
V
CC
= 300V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
10
1
10
2
10
3
10
-1
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIMES, t
c(on)
, t
c(off)
, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
t
c(on)
10
0
10
1
t
c(off)
V
CC
= 300V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
10
1
10
2
10
3
10
-2
COLLECTOR REVERSE CURRENT, -I
C
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (µs)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
10
-1
10
0
10
0
10
1
10
2
V
CC
= 300V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
I
rr
t
rr
120
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
SUPPLY VOLTAGE, V
D
, (VOLTS)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
01214161820
60
00
80
100
T
j
= 25
o
C
40
60
80
100
120
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, T
j
, (
o
C)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
-50 0 50 100 150
V
D
= 15V
0.4 0.8 1.2
10
1
10
2
10
3
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR REVERSE CURRENT, -I
C
, (AMPERES)
1.6 2.42.0
V
D
= 15V
V
CIN
= 15V
T
j
= 25
o
C
T
j
= 125
o
C
DIODE FORWARD CHARACTERISTICS
Inverter Part
MITSUBISHI INTELLIGENT POWER MODULES
PM150RSA060
FLA T -BASE TYPE
INSULATED PACKAGE
http://store.iiic.cc/
Sep.1998
11
12
13
14
15
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
JUNCTION TEMPERATURE, TC, (oC)
UV TRIP-RESET LEVEL,
UVt, UVr, (VOLTS)
-50 1500 50 100
UV
UVr
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
10
1
10
-1
10
0
10
1
10
0
10
-1
10
-2
10
-3
10
-3
0
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.25oC/W
10
-2
10
-3
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
10
1
10
-1
10
0
10
1
10
0
10
-1
10
-2
10
-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 0.47oC/W
10
-2
10
-3
0
40
60
80
100
120
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, Tj, (oC)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
-50 0 50 100 150
VD = 15V
Inverter Part
MITSUBISHI INTELLIGENT POWER MODULES
PM150RSA060
FLA T-BASE TYPE
INSULATED PACKAGE
http://store.iiic.cc/
Sep.1998
MITSUBISHI INTELLIGENT POWER MODULES
PM150RSA060
FLA T-BASE TYPE
INSULATED P ACKAGE
Brake Part
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE VS. SUPPLY VOLTAGE
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j-c)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j-c)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
FORWARD VOLTAGE VF (V)
SUPPLY VOLTAGE VD (V)
FORWARD CURRENT IF (A)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS
(TYPICAL)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT per 1 element)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi per 1 element)
100
80
60
40
20
050 1234
T
j
= 25°C
V
CIN
= 0V
V
D
= 17V 15V 13V
5
4
3
2
1
01000 20 40 60 80
V
D
= 15V
V
CIN
= 0V
T
j
= 25°C
T
j
= 125°C
5
4
3
2
1
01612 14 18 20
T
j
= 25°C
V
CIN
= 0V
I
C
= 50A
I
C
= 20A
10
0
10
2
7
5
3
2
0
10
1
7
5
3
2
0.4 0.8 1.2 1.6 2.0
4
4
T
j
= 25°C
T
j
= 125°C
V
D
= 15V
V
CIN
= 15V
10
1
10
–3
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57
10
–2
23 57
10
–1
23 57
10
0
23 57
10
1
Single Pulse
STANDARD VALUE
= R
th(j – c)Q
= 0.4°C/W
10
1
10
–3
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57
10
–2
23 57
10
–1
23 57
10
0
23 57
10
1
Single Pulse
STANDARD VALUE
= R
th(j – c)F
= 1.0°C/W
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