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1
V2
MADP-042005 Series
SURMOUNT TM 5 µm PIN Diodes—MADP-042305-130600,
MADP-042405-130600, MADP-042505-130600, MADP-042905-130600
Bottom Side Contacts are Circuit Side
Features
• Surface Mount, 5 µm I-Region Length Device
• No Wirebonds Re quired
• Rugged Silicon-Glass Construction
• Silicon Nitride Passivation
• Polymer Scratch Protection
• Low Parasitic Capacitance and Inductance
• Higher Average and Peak Power Handling
Description and Applications
This device is a Silicon-Glass PIN diode chip fabricated
with M/A-COM’s patented HMICTM process. This
device features two silicon pedestals embedded in a
low loss, low dispersion glass. The diode is formed
on the top of one pedestal and connections to the
backside of the device are facilitated by making the
pedestal sidewalls electrically conductive. Selective
backside metallization is applied producing a surface
mount device. This Vertical Topology provides for
Exceptional Heat Transfer. The topside is fully
encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact
protection. These protective coatings prevent
damage to the junction and the anode air-bridge
during handling and as sembly.
These packageless devices are suitable for usage in
Moderate Incident Power ( 10 W C.W. ) and 50 W , 1
uS, 0.01 Duty Cycle, Peak Power, Series, Shunt, or
Series-Shunt Switches. Smaller Parasitic
Inductance, 0.4 nH, and Excellent RC Constant,
make the devices ideal for Higher Frequency Switch
Elements compared to their Plastic Device Counterparts.
Absolute Maximum Ratings1
@ TA = +25 °C (unless otherwise
specified)
1. Operation of this device above any one of these parameters
may cause permanent damage.
Parameter Absolute Maximum
Part 042
305 042
405 042
505 042
905
Forward
Current 250 mA
Reverse
Voltage l -80 V l
Operating
Temperature -55 °C to +125 °C
Storage
Temperature -55 °C to +150 °C
Junction
Temperature +175 °C
C.W. Inci-
dent Power
(dBm)
40 44 43 35
Mounting
Temperature +300 °C for 10 seconds
Dim Inches Millimeters
Min. Max. Min. Max.
A 0.040 0.042 1.025 1.075
B 0.021 0.023 0.525 0.575
C 0.004 0.008 0.102 0.203
D 0.013 0.015 0.325 0.375
E 0.011 0.013 0.275 0.325
F 0.013 0.015 0.325 0.375
G 0.019 0.021 0.475 0.525
Case Style
ODS-1306
1. Backside Metal: 0.1microns thick.
2. Shaded Areas Indicate Backside Ohmic Gold Contacts.
3. Both Devices have Same Outline Dimensions ( A to G ).
A
B
C
G
D E F