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Symbol Conditions Maximum Ratings (per diode)
IFRMS 120 A
IF(AV)M TC = 80°C; 180° sine 56 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 650 A
t = 8.3 ms(60 Hz), sine 700 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 570 A
t = 8.3 ms(60 Hz), sine 610 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 2210 A2s
t = 8.3 ms(60 Hz), sine 2060 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 1620 A2s
t = 8.3 ms(60 Hz), sine 1560 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
Ptot TC = 25°C 190 W
VISOL 50/60 Hz, RMS 2500 V~
IISOL £ 1 mA
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
Symbol Conditions Characteristic Values (per diode)
typ. max.
IRTVJ = 25°CV
R = VRRM 0.3 mA
TVJ = 150°C5mA
VFIF = 60 A; TVJ = 125°C 1.25 V
TVJ = 25°C 1.20 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 8mW
RthJC 0.65 K/W
RthCH 0.1 K/W
Data according to IEC 60747
IF(AV)M = 2x 56 A
VRRM = 1200-1600 V
Features
●International standard package
miniBLOC (ISOTOP compatible)
●Isolation voltage 2500 V~
●2 independent rectifier diodes in one
package
●Planar passivated chips
Applications
●Input rectifier diode
●Rectifiers in switch mode power
supplies (SMPS)
●Inductive heating and melting
●Uninterruptible power supplies (UPS)
●Ultrasonic cleaners and welders
Rectifier Diode
VRSM VRRM Type
VV
1300 1200 DSI 2x55-12A
1700 1600 DSI 2x55-16A
miniBLOC, SOT-227 B
E72873
DSI 2x55
M4 screws (4x) supplied
miniBLOC, SOT-227 B
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08
008
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© 2000 IXYS All rights reserved 2 - 2
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I2t
IFSM
IF
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VFtstms
Ptot
W
IF(AV)M
ATamb
ts
K/W
A2s
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IF(AV)M
TC
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°C°C
DSI 2x55
TVJ = 45°C
50Hz, 80% VRRM VR = 0 V
Fig. 1 Forward current versus voltage
drop per diode Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
Fig. 5 Max. forward current versus case
temperature, sine180°
Fig. 6 Transient thermal impedance junction to case
RthHA :
0.1 K/W
0.5 K/W
1.0 K/W
2.0 K/W
4.0 K/W
7.0 K/W
TVJ = 150°C
TVJ = 45°C
TVJ=125°C
TVJ= 25°C
TVJ = 150°C
ZthJC
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.031 0.00024
2 0.0554 0.0036
3 0.114 0.0235
4 0.281 0.142
5 0.1686 0.7
DSI 2x55
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