FQD19N10 - Fairchild - Product.Network

FQD 1 9N10 / FQ U 1 9N10

FQD19N10 / FQU19N10

100V N-Ch annel M OSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

Features

• 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V

• Low gate charge ( typical 19 nC)

• Low Crss ( typical 32 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Charac teristic s

Symbol Parameter FQD19N10 / FQU19N10 Units

VDSS Drain-Source Voltage 100 V

IDDrain Current - Continuous (TC = 25°C) 15.6 A

- Continuous (TC = 100°C) 9.8 A

IDM Drain Current - Pulsed (Note 1) 62.4 A

VGSS Gate-Source Voltage ± 25 V

EAS Single Pulsed Avalanche Energy (Note 2) 220 mJ

IAR Avalanche Current (Note 1) 15.6 A

EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

PDPower Dissipation (TA = 25°C) * 2.5 W

Power Dissipation (TC = 25°C) 50 W

- Derate above 25°C 0.4 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 2.5 °C/W

RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

I-PAK

FQU Series

D-P AK

FQD Series GS

•RoHS Compliant

January 2009

QFET

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Rev. A1, January 2009

FQD19N10 / FQU19N10

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.35mH, IAS = 15.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 19A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit ions Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA100 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.1 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µA

VDS = 80 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 7.8 A -- 0.078 0.1 Ω

gFS Forward Transconduct ance VDS = 40 V, ID = 7.8 A -- 11 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 600 780 pF

Coss Output Capacitance -- 165 215 pF

Crss Reverse Transfer Capacitance -- 32 40 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 50 V, ID = 19 A,

RG = 25 Ω

-- 7.5 25 ns

trTurn-On Rise Time -- 150 310 ns

td(off) Turn-Off D e l a y Time -- 20 50 ns

tfTurn-Off Fa ll Time -- 65 140 ns

QgTotal Gate Cha rge VDS = 80 V, ID = 19 A,

VGS = 10 V

-- 19 25 nC

Qgs Gate-Source Charge -- 3.9 -- nC

Qgd Gate-Drain Charge -- 9.0 -- nC

Drain-Source Diode Characteristics and Maximum R atings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 15.6 A

ISM Maximum Pul sed Drain-Source Diode Forward Current -- -- 62. 4 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15.6 A -- -- 1.5 V

trr Reverse Recovery Time VGS = 0 V, I S = 19 A,

dIF / dt = 100 A/µs

-- 78 -- ns

Qrr Reverse Recovery Charge -- 200 -- nC

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FQD 1 9N10 / FQ U 1 9N10

0 4 8 12 16 20

VDS = 50V

VDS = 80V

※ Note : ID = 19A

VGS, Gate-Source Voltage [V]

QG, T ota l Ga t e Ch arge [n C]

10-1 100101

300

600

900

1200

1500 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

※ Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

10-1

100

101

25℃

150℃※ Notes :

1. VGS = 0V

2. 250 μ

s Pu lse Te st

IDR , Reverse D rain Current [A]

VSD , Source-Drain Voltage [V]

0 20406080

0.00

0.06

0.12

0.18

0.24

0.30

※ N o te : TJ = 25℃

VGS = 20V

VGS = 10V

RDS(on) [Ω],

Drain-Source On -Resistance

ID , D rain Curre nt [A ]

246810

10-1

100

101

※ No tes :

1 . VDS = 40V

2. 250μ

s Pulse Test

-55℃

150℃

25℃

ID , Drain Curr e n t [A ]

VGS , Gate-Source Voltage [V ]

10-1 100101

100

101

VGS

To p : 15 .0 V

10 .0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bo tto m : 4.5 V

※ Notes :

1. 250μ

s Pu lse Te st

2. TC = 25℃

ID, Drain C urrent [A]

VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. C apacitance Characteristi cs Figure 6. Ga te Ch arge Chara ct eri s ti cs

Figu re 3. On-Resi stan ce Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Characteri st ics

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FQD19N10 / FQU19N10

Rev. A1, January 2009

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

※ No te s :

1 . ZθJC(t) = 2 .5 ℃/W M a x .

2 . D u ty F a c t o r, D = t 1/t2

3 . TJM - T C = P DM * ZθJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Therm al Response

t1, Sq u a re W a ve P u lse D u ra tio n [s ec ]

25 50 75 100 125 150

ID, Drain Current [A ]

TC, C ase Temperature [℃

]

100101102

10-1

100

101

102

10 µs

DC 10 m s

1 ms 100 µs

Op era tion in Th is A r e a

is L imited by R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, D rain C u rrent [A ]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. VGS = 10 V

2. ID = 7.8 A

RDS(ON) , (Normalized)

Drain-Source O n-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1 . VGS = 0 V

2 . ID = 250 μ

BV DSS , (N ormaliz e d )

Drain-S ource B reakdow n Voltage

TJ, Junction Tempe rature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Br ea kdown Voltage Variati on

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Res ponse Curve

PDM

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FQD 1 9N10 / FQ U 1 9N10

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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FQD19N10 / FQU19N10

Rev. A1,January 2009

Peak Diode Recovery dv /d t Test Circui t & Waveform s

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll e d by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll e d by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

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FQD 1 9N10 / FQ U 1 9N10

Package Dimensions

TO-252 (DPAK) (FS PKG Code 36)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

millimeters

Par t Weight per unit (gram): 0.33

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FQD19N10 / FQU19N10

Rev. A1, January 2009

Package Dimensions (Continued)

6.60 ±0.20

0.76 ±0.10

MAX0.96

2.30TYP

[2.30±0.20] 2.30TYP

[2.30±0.20]

0.60 ±0.20

0.80 ±0.10

1.80 ±0.20

9.30 ±0.30

16.10 ±0.30

6.10 ±0.20

0.70 ±0.20

5.34 ±0.20

0.50 ±0.10

2.30 ±0.20

(0.50) (0.50)(4.34)

IPAK

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Rev. I37

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