Single Phase Rectifier Bridges PSB 82 IdAVM = 72A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 82/08 PSB 82/12 PSB 82/14 PSB 82/16 PSB 82/18 Symbol Test Conditions IdAVM IFSM T C = 100C, module i2 dt T VJ T VJM T stg VISOL Md W eight MaXimum Ratings 72 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 750 820 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 670 740 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 2800 A2 s A2 s T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2250 2250 A2 s A2 s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 5 5 160 Nm Nm g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM Characteristic Value VF VTO rT RthJC IF = 150 A T VJ = 25C 0.3 5 mA mA 1.6 V 0.8 5 V m per Diode; DC current per module 1.1 0.28 K/W K/W RthJK per Diode; DC current per module 1.52 0.38 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 10 9.4 50 mm mm m/s2 For power-loss calculations only T VJ = T VJM POWERSEM GmbH, Walpersdorfer Str.53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net PSB 82 200 IF(OV) -----IFSM [A] 1.6 150 4 10 2 As IFSM (A) TVJ=45C TVJ=150C 750 670 TVJ=45C 1.4 1.2 100 10 3 TVJ=150C 1 0 VRRM 50 I F 0.8 Tvj = 150C 1/2 VRRM Tvj = 25C 1 VRRM 0.6 10 0 0.5 1 1.5 VF [V] 0 200 [W] 175 1 10 Fig. 1 Forward current versus voltage drop per diode 2 1 0.4 2 10 2 2 3 t[ms] 10 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 95 TC PSB 82 0.35 0.22 = RTHCA [K/W] 0.47 100 105 150 110 125 80 DC sin.180 rec.120 rec.60 rec.30 [A] 60 115 0.73 120 100 125 1.23 75 40 130 DC sin.180 rec.120 rec.60 rec.30 50 25 PVTOT 0 135 2.72 140 145 C 150 10 30 IFAVM 50 70 0 [A] Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 2 K/W Z thJK 1.5 Z thJC 1 0.5 Zth 0.01 0.1 t[s] 1 20 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated IdAV 0 50 100 150 200 TC(C) Fig.5 Maximum forward current at case temperature