6MBI35S-120L - Fuji Electric Co., Ltd.

6MBI 35S-120L

6-Pack IGBT

1200V

6x35A

IGBT MODULE ( S-Series )

nn Features

• NPT-Technologie

• Solderable Package

• Square SC SOA at 10 x IC

• High Short Circuit Withstand-Capability

• Small Temperature Dependence of the Turn-Off

Switching Loss

• Low Losses And Soft Switching

nn Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

nn Outline Drawing

nn Maximum Ratings and Characteristics nn Equivalent Circuit

• Absolute Maximum Ratings ( Tc=25°C)

Items Symbols Ratings Units

Collector-Emitter Voltage VCES 1200 V

Gate -Emitter Voltage VGES ± 20 V

Continuous IC50 / 35

Collector 1ms IC PULSE 100 / 70

Current (25°C / 80°C) Continuous -IC50 / 35

1ms -IC PULSE 100 / 70

Max. Power Dissipation PC280 W

Operating Temperature Tj+150 °C

Storage Temperature Tstg -40 ∼ +125 °C

Isolation Voltage A.C. 1min. Vis 2500 V

Screw Torque Mounting *1 3.5 Nm

Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)

• Electrical Characteristics ( at Tj=25°C )

Items Symbols Test Conditions Min. Typ. Max. Units

Zero Gate Voltage Collector Current ICES VGE=0V VCE=1200V 1.0 mA

Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 200 µA

Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=35mA 6.0 9.0 V

Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=35A 2.1 V

Input capacitance Cies VGE=0V 4200

Output capacitance Coes VCE=10V pF

Reverse Transfer capacitance Cres f=1MHz

tON VCC=600V 0.60 1.2

trIC=35A 0.40 0.6

tOFF VGE=± 15V 0.45 1.0

tfRG=33Ω0.10 0.3

Diode Forward On-Voltage VFIF=35A VGE=0V 3.3 V

Reverse Recovery Time trr IF=35A 350 ns

• Thermal Characteristics

Items Symbols Test Conditions Min. Typ. Max. Units

Rth(j-c) IGBT 0.44

Thermal Resistance Rth(j-c) Diode 0.80 °C/W

Rth(c-f) With Thermal Compound 0.05

Turn-on Time

Turn-off Time µs