A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 45
BVCER IC = 25 mA RBE = 10 Ω 45 V
BVEBO IE = 1.0 mA 3.5 V
ICES VCE = 28 V 1.0 mA
hFE VCE = 5.0 V IC = 200 mA 30 300
PG
POUT
η
ηη
η
VCE = 28 V PIN = 500 mW f = 1025 to 1150 MHz
PULSE WIDTH = 10 µS DUTY CYCLE = 1.0%
9.0
4.0
35
dB
W
%
NPN SILICON RF MICROWAVE TRANSISTOR
MSC1004M
DESCRIPTION:
The ASI MSC1004M is low level
Class-C, Comm on Base Device
Designed for IFF, DME driver
Applications.
FEATURES INCLUDE:
• Gold Metalization
• Input Matching
• Emitter Ballasting
MAXIMUM RATINGS
IC 650 mA
VCC 32 V
PDISS 18 W @ TC ≤ 100 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +150 OC
θ
θθ
θJC 5.0 OC/W
PACKAGE STYLE .250 SQ 2L FL
1 = COLLECTOR 2 = EMITTER 3 = BASE
1
2
3
