J/SSTJ210 Series
Vishay Siliconix
Document Number: 70234
S-04028—Rev. E, 04-Jun-01 www.vishay.com
7-1
N-Channel JFETs
J210 SSTJ211
J211 SSTJ212
J212
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
J210 –1 to –3 –25 4 2
J/SSTJ211 –2.5 to –4.5 –25 6 7
J/SSTJ212 –4 to –6 –25 7 15
FEATURES BENEFITS APPLICATIONS
DExcellent High Frequency Gain:
J211/212, Gps 12 dB (typ) @ 400 MHz
DVery Low Noise: 3 dB (typ) @
400 MHz
DVery Low Distortion
DHigh ac/dc Switch Off-Isolation
DHigh Gain: AV = 35 @ 100 mA
DWideband High Gain
DVery High System Sensitivity
DHigh Quality of Amplification
DHigh-Speed Switching Capability
DHigh-Quality Low-Level Signal
Amplification
DHigh-Frequency Amplifier/Mixer
DOscillator
DSample-and-Hold
DVery Low Capacitance Switches
DESCRIPTION
The J/SSTJ210 Series n-channel JFETs are general-purpose
and high-frequency amplifiers for a wide range of applications.
These devices feature low leakage (IGSS < 100 pA).
The TO-226AA (TO-92) plastic package, provides low cost
while the TO-236 (SOT-23) package provides surface-mount
capability. The J/SSTJ210 Series is available in tape-and-reel
for automated assembly (see Packaging Information).
For similar dual products, see the 2N5911/5912 and U440/441
data sheets.
TO-226AA
(TO-92)
Top View
D
G
S
1
2
3
D
S
G
TO-236
(SOT-23)
Top View
2
3
1
*Marking Code for TO-236
SSTJ211 (Z1)*
SSTJ212 (Z2)*
J210
J211
J212
For applications information see AN104.
J/SSTJ210 Series
Vishay Siliconix
www.vishay.com
7-2 Document Number: 70234
S-04028—Rev. E, 04-Jun-01
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J210 J/SSTJ211 J/SSTJ212
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –35 –25 –25 –25 V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 1 nA –1–3–2.5 –4.5 –4–6V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 215 720 15 40 mA
VGS = –15 V, VDS = 0 V –1–100 –100 –100 pA
Gate Reverse Current IGSS TA = 125_C–0.5 nA
Gate Operating CurrentaIGVDG = 10 V, ID = 1 mA –1
Drain Cutoff Current ID(off) VDS = 10 V, VGS = –8 V 1pA
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward T ransconductancebgfs VDS = 15 V, VGS = 0 V 412 612 712 mS
Common-Source
Output Conductance gos
VDS = 15 V, VGS = 0 V
f = 1 kHz 150 200 200 mS
Common-Source
Input Capacitance Ciss VDS = 15 V, VGS = 0 V 4
Common-Source
Reverse Transfer Capacitance Crss
VDS = 15 V, VGS = 0 V
f = 1 MHz 1.5 pF
Equivalent Input Noise Voltage enVDS = 15 V, VGS = 0 V
f = 1 kHz 5nV⁄
√Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZF
b. Pulse test: PW v300 ms duty cycle v3%.
J/SSTJ210 Series
Vishay Siliconix
Document Number: 70234
S-04028—Rev. E, 04-Jun-01 www.vishay.com
7-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
50
0–10–8–2
40
10
0
20
16
4
0
30
20
12
8
–4–60 4 16 20812
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
Gate Leakage Current
VDG – Drain-Gate Voltage (V)
0.1 pA
10 pA
1 pA
10 nA
100 pA
100 nA
1 nA
IG(on) @ ID
IGSS @ 25_C
TA = 125_C
10 mA 1 mA
TA = 25_C
IGSS @ 125_C
1 mA
10 mA
200
0–10–8–2
160
40
00.1 110
10
8
2
0
200
160
120
40
0
120
80 80
–4–6
6
4
5
0 0.2 0.8 1
4
1
0
2
3
0.4 0.6
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
rDS
gos
Common-Source Forward Transconductance
vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125_C
Output Characteristics
VDS – Drain-Source Voltage (V)
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
VGS = 0 V
VGS(off) = –5 V VDS = 10 V
f = 1 kHz
VGS(off) = –2 V
15
0 0.2 0.8 1
12
3
0
9
6
0.4 0.6
Output Characteristics
VDS – Drain-Source Voltage (V)
VGS = 0 V
–1.5 V
–0.5 V
–2.5 V
–1.0 V
–3.0 V
–3.5 V
–2.0 V
VGS(off) = –5 V
25_C
gos – Output Conductance (mS)
IDSS – Saturation Drain Current (mA)
gfs – Forward Transconductance (mS)
rDS(on) – Drain-Source On-Resistance ( Ω )
gfs – Forward Transconductance (mS) IG – Gate Leakage
ID – Drain Current (mA)
ID – Drain Current (µA)
J/SSTJ210 Series
Vishay Siliconix
www.vishay.com
7-4 Document Number: 70234
S-04028—Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
30
08210
24
6
0
18
12
46
Output Characteristics
VDS – Drain-Source Voltage (V)
VGS = 0 V –0.5 V
–2.5 V
–2.0 V
–3.0 V
–3.5 V
–1.0 V
–1.5 V
VGS(off) = –5 V
10
068210
8
6
2
0
4
4
Output Characteristics
VDS – Drain-Source Voltage (V)
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
VGS(off) = –2 V
10
0–0.4 –1.6 –2
8
2
0
10
0–1.2 –1.6–0.4 –2
8
4
2
0
6
4
6
–0.8 –1.2
–0.8
30
0–4–5–1
24
6
0
18
12
–2–3
10
–5–4–10
8
2
0
6
4
–2–3
Transfer Characteristics
VGS – Gate-Source Voltage (V)
TA = –55_C
VGS(off) = –2 V
125_C
Transconductance vs. Gate-Source Voltage
VGS – Gate-Source Voltage (V)
VGS(off) = –5 V
TA = –55_C
125_C
Transfer Characteristics
VGS(off) = –2 V
TA = –55_C
125_C
VGS – Gate-Source Voltage (V)
VGS(off) = –5 V
TA = –55_C
Transconductance vs. Gate-Source Voltage
VGS – Gate-Source Voltage (V)
125_C
VDS = 10 V VDS = 10 V
25_C
VDS = 10 V
f = 1 kHz
VDS = 10 V
f = 1 kHz
25_C
25_C25_C
gfs – Forward Transconductance (mS)
gfs – Forward Transconductance (mS) ID – Drain Current (mA)
ID – Drain Current (mA)
ID – Drain Current (mA)
ID – Drain Current (mA)
J/SSTJ210 Series
Vishay Siliconix
Document Number: 70234
S-04028—Rev. E, 04-Jun-01 www.vishay.com
7-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
1100.11 10 100
50
40
20
10
0
200
160
80
40
0
120 30
VGS(off) = –2 V
TA = 25_C
VGS(off) = –5 V
On-Resistance vs. Drain Current
ID – Drain Current (mA) ID – Drain Current (mA)
VGS(off) = –2 V
VGS(off) = –5 V
Circuit Voltage Gain vs. Drain Current
RL+10 V
ID
Assume VDD = 15 V, VDS = 5 V
AV+
gfs RL
1)RLgos
10
0–16 –20–4
8
2
0
5
0–12 –20–16–4
4
2
1
0
6
4
3
–8–12 –8
100
10
1
0.1 100 1000
100
10
1
0.1 100 1000
Common-Source Input Capacitance
vs. Gate-Source Voltage
VDS = 0 V
f = 1 MHz
VGS – Gate-Source Voltage (V)
VDS = 10 V
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
VDS = 0 V
f = 1 MHz
VGS – Gate-Source Voltage (V)
VDS = 10 V
(mS)
TA = 25_C
VDS = 10 V
ID = 10 mA
gig
big
Input Admittance
f – Frequency (MHz)
gis
bis
f – Frequency (MHz)
(mS)
TA = 25_C
VDS = 10 V
ID = 10 mA
bfg
Forward Admittance
–bfs
– Input Capacitance (pF)Ciss
200 500 200 500
VDS = 5 V VDS = 5 V
–gfggfs
rDS(on) – Drain-Source On-Resistance ( Ω )
Crss – Reverse Feedback Capacitance (pF) AV – Voltage Gain
J/SSTJ210 Series
Vishay Siliconix
www.vishay.com
7-6 Document Number: 70234
S-04028—Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10
1
0.1
0.01 100 1000
100
10
1
0.1 100 1000
(mS)
TA = 25_C
VDS = 10 V
ID = 10 mA
–brg
–grg grg
Reverse Admittance
f – Frequency (MHz)
–brs
–grs
(mS)
TA = 25_C
VDS = 10 V
ID = 10 mA
gog, gos
bog, bos
Output Admittance
f – Frequency (MHz)
200 500 200 500
10 100 1 k 100 k10 k
50
40
10
0
150
120
90
30
00.1 1 10
60
30
20
Equivalent Input Noise Voltage vs. Frequency
ID = 1 mA
VDS = 10 V
ID = 10 mA
f – Frequency (Hz)
Output Conductance vs. Drain Current
VGS(off) = –5 V
ID – Drain Current (mA)
TA = –55_C
125_C
VDS = 10 V
f = 1 kHz
25_C
en – Noise Voltage nV / Hz
gos – Output Conductance (µS)
