J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 -1 to -3 -25 4 2 J/SSTJ211 -2.5 to -4.5 -25 6 7 J/SSTJ212 -4 to -6 -25 7 15 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain: J211/212, Gps 12 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 35 @ 100 mA D D D D D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High-Quality Low-Level Signal Amplification High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The J/SSTJ210 Series n-channel JFETs are general-purpose and high-frequency amplifiers for a wide range of applications. These devices feature low leakage (IGSS < 100 pA). capability. The J/SSTJ210 Series is available in tape-and-reel for automated assembly (see Packaging Information). The TO-226AA (TO-92) plastic package, provides low cost while the TO-236 (SOT-23) package provides surface-mount For similar dual products, see the 2N5911/5912 and U440/441 data sheets. TO-226AA (TO-92) D 1 S 2 TO-236 (SOT-23) D 3 S G 3 1 G SSTJ211 (Z1)* SSTJ212 (Z2)* 2 J210 J211 J212 *Marking Code for TO-236 Top View Top View For applications information see AN104. Document Number: 70234 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-1 J/SSTJ210 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Notes a. Derate 2.8 mW/_C above 25_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J210 J/SSTJ211 J/SSTJ212 Symbol Test Conditions Typa Min V(BR)GSS IG = -1 mA , VDS = 0 V -35 -25 VGS(off) VDS = 15 V, ID = 1 nA -1 -3 -2.5 -4.5 -4 -6 Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 2 15 7 20 15 40 mA -100 pA Gate Reverse Current IGSS Parameter Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Operating Currenta VGS = -15 V, VDS = 0 V TA = 125_C -25 -25 V -1 -100 -100 -0.5 IG VDG = 10 V, ID = 1 mA -1 Drain Cutoff Current ID(off) VDS = 10 V, VGS = -8 V 1 Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 nA pA V Dynamic Common-Source Forward Transconductanceb gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en 4 VDS = 15 V, VGS = 0 V f = 1 kHz 7-2 150 6 12 7 200 12 mS 200 mS 4 VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V f = 1 kHz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. www.vishay.com 12 pF 1.5 5 nV Hz NZF Document Number: 70234 S-04028--Rev. E, 04-Jun-01 J/SSTJ210 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 20 IG(on) @ ID 16 12 30 20 8 gfs 10 4 IDSS 0 0 0 -4 -2 -6 -8 10 nA TA = 125_C IG - Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 40 100 nA gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 50 10 mA 1 nA IGSS @ 125_C 100 pA 1 mA 1 mA 10 mA 10 pA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA -10 0 4 VGS(off) - Gate-Source Cutoff Voltage (V) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 200 120 120 80 80 rDS 40 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 gfs - Forward Transconductance (mS) 160 gos - Output Conductance (mS) rDS(on) - Drain-Source On-Resistance ( ) VGS(off) = -5 V 160 -6 -8 VDS = 10 V f = 1 kHz TA = -55_C 6 25_C 4 125_C 2 0 1 0.1 -10 10 ID - Drain Current (mA) VGS(off) - Gate-Source Cutoff Voltage (V) Output Characteristics Output Characteristics 15 5 VGS(off) = -2 V VGS = 0 V VGS(off) = -5 V -0.2 V -0.4 V 3 -0.6 V 2 -0.8 V -1.0 V 1 VGS = 0 V 12 ID - Drain Current (mA) 4 ID - Drain Current (A) 20 8 0 -4 -2 16 10 gos 0 12 Common-Source Forward Transconductance vs. Drain Current 200 40 8 VDG - Drain-Gate Voltage (V) -0.5 V -1.0 V 9 -1.5 V -2.0 V 6 -2.5 V -3.0 V 3 -3.5 V -1.2 V 0 0 0 0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V) Document Number: 70234 S-04028--Rev. E, 04-Jun-01 1 0 0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V) 1 www.vishay.com 7-3 J/SSTJ210 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Output Characteristics 10 30 VGS(off) = -2 V VGS = 0 V 8 6 ID - Drain Current (mA) ID - Drain Current (mA) VGS = 0 V -0.2 V -0.4 V 4 -0.6 V -0.8 V 2 -1.0 V -1.5 V 18 -2.0 V 12 -2.5 V -3.0 V 6 -1.0 V -3.5 V -1.2 V 0 VGS(off) = -5 V 0 0 4 2 6 8 10 0 Transfer Characteristics 8 10 Transfer Characteristics 30 VGS(off) = -2 V VDS = 10 V VGS(off) = -5 V 8 VDS = 10 V 24 ID - Drain Current (mA) TA = -55_C 25_C 6 4 125_C 2 TA = -55_C 18 25_C 125_C 12 6 0 0 0 -0.4 -0.8 -1.2 -1.6 -2 0 -1 VGS - Gate-Source Voltage (V) -2 -3 -4 -5 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage 10 10 8 VDS = 10 V f = 1 kHz VGS(off) = -5 V gfs - Forward Transconductance (mS) VGS(off) = -2 V gfs - Forward Transconductance (mS) 6 VDS - Drain-Source Voltage (V) 10 ID - Drain Current (mA) 4 2 VDS - Drain-Source Voltage (V) TA = -55_C 25_C 6 125_C 4 2 0 8 TA = -55_C 25_C 6 125_C 4 2 VDS = 10 V f = 1 kHz 0 0 -0.4 -0.8 -1.2 -1.6 VGS - Gate-Source Voltage (V) www.vishay.com 7-4 -0.5 V 24 -2 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V) Document Number: 70234 S-04028--Rev. E, 04-Jun-01 J/SSTJ210 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current g fs R L AV + 1 ) R g L os 160 40 Assume VDD = 15 V, VDS = 5 V VGS(off) = -2 V 120 VGS(off) = -5 V 80 40 RL + 30 10 V ID VGS(off) = -2 V 20 VGS(off) = -5 V 10 TA = 25_C 0 0 1 10 ID - Drain Current (mA) 100 0.1 1 ID - Drain Current (mA) 10 5 Crss - Reverse Feedback Capacitance (pF) f = 1 MHz 8 6 VDS = 5 V 4 VDS = 0 V 2 VDS = 10 V 0 f = 1 MHz 4 3 VDS = 5 V 2 VDS = 0 V 1 VDS = 10 V 0 0 -4 -8 -16 -12 -20 0 -4 Input Admittance -16 -20 Forward Admittance TA = 25_C VDS = 10 V ID = 10 mA gig 10 bis 1 -12 100 TA = 25_C VDS = 10 V ID = 10 mA (mS) (mS) 10 -8 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) 100 10 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage Common-Source Input Capacitance vs. Gate-Source Voltage C iss - Input Capacitance (pF) Circuit Voltage Gain vs. Drain Current 50 AV - Voltage Gain rDS(on) - Drain-Source On-Resistance ( ) 200 -bfs gfs bfg 1 big -gfg gis 0.1 0.1 100 200 500 f - Frequency (MHz) Document Number: 70234 S-04028--Rev. E, 04-Jun-01 1000 100 200 500 f - Frequency (MHz) 1000 www.vishay.com 7-5 J/SSTJ210 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Reverse Admittance Output Admittance 100 10 TA = 25_C VDS = 10 V ID = 10 mA TA = 25_C VDS = 10 V ID = 10 mA -brs 10 (mS) (mS) 1 -brg -grs 0.1 bog, bos 1 grg -grg gog, gos 0.1 0.01 100 200 500 1000 100 200 f - Frequency (MHz) Equivalent Input Noise Voltage vs. Frequency 150 VGS(off) = -5 V gos - Output Conductance (S) Hz VDS = 10 V en - Noise Voltage nV / 1000 Output Conductance vs. Drain Current 50 40 30 ID = 1 mA 20 ID = 10 mA 10 VDS = 10 V f = 1 kHz 120 TA = -55_C 90 25_C 60 30 125_C 0 0 10 100 1k f - Frequency (Hz) www.vishay.com 7-6 500 f - Frequency (MHz) 10 k 100 k 0.1 1 10 ID - Drain Current (mA) Document Number: 70234 S-04028--Rev. E, 04-Jun-01