A1366LKTTN-1-T - ALLEGRO MICROSYSTEMS

DESCRIPTION

The Allegro™ A1366 factory-programmable linear Hall-

effect current sensor IC has been designed to achieve high

accuracy and resolution. The goal is achieved through new

proprietary linearly interpolated temperature compensation

technology that is programmed at the Allegro factory, which

provides sensitivity and offset that are virtually flat across

the full operating temperature range. The flat performance

over temperature makes this IC ideally suited for current

sensing applications. Temperature compensation is done in

the digital domain with integrated EEPROM technology

without sacrificing the analog signal path bandwidth, making

this device ideal for HEV inverter, DC-to-DC converter, and

electric power steering (EPS) applications.

This ratiometric Hall-effect sensor IC provides a voltage output

that is proportional to the applied magnetic field. Sensitivity and

quiescent (zero field) output voltage are factory programmed

with high resolution, which provides for an accuracy of less

than ±1% typical over temperature.

The sensor IC incorporates a highly sensitive Hall element with

a BiCMOS interface integrated circuit that employs a low noise,

small-signal high-gain amplifier, as well as a low-impedance

output stage, and a proprietary, high bandwidth dynamic offset

cancellation technique. These advances in Hall-effect technology

work together to provide an industry-leading sensing resolution at

the full 120 kHz bandwidth. The device has built-in broken ground

wire detection for high reliability in automotive applications.

A1366-DS, Rev. 4

MCO-0000373

FEATURES AND BENEFITS

• Factory-programmed sensitivity and quiescent output

voltage with high resolution

• Proprietary segmented linear interpolated temperature

compensation (TC) technology provides a typical accu-

racy of 1% across the full operating temperature range

• Extremely low noise and high resolution achieved via

proprietary Hall element and low noise amplifier circuits

• 120 kHz nominal bandwidth achieved via proprietary

packaging and chopper stabilization techniques

• Patented circuits suppress IC output spiking during fast

current step inputs

• Open circuit detection on ground pin (broken wire)

• Undervoltage lockout for VCC below specification

• Ratiometric sensitivity and quiescent voltage output

• Precise recoverability after temperature cycling

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

Functional Block Diagram

A1366

V+

Dynamic Offset

Cancellation

EEPROM and

Control Logic

VCC

GND

VOUT

Signal Recovery

To all subcircuits

BYPASS

Temperature

Sensor

Offset ControlSensitivity Control

Programming

Control

Continued on the next page…

April 26, 2019

PACKAGE: 4-pin SIP (suffix KT)

Not to scale

TN Leadform TF Leadform TG Leadform

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

SELECTION GUIDE

Part Number Leadform Package Packing* Sensitivity (Typ.)

(mV/G)

A1366LKTTF-1-T TF (Formed) 4-pin SIP 4000 pieces per 13-inch reel 1

A1366LKTTF-2-T TF (Formed) 4-pin SIP 4000 pieces per 13-inch reel 2.5

A1366LKTTF-5-T TF (Formed) 4-pin SIP 4000 pieces per 13-inch reel 5

A1366LKTTF-10-T TF (Formed) 4-pin SIP 4000 pieces per 13-inch reel 10

A1366LKTTG-1-T TG (Formed) 4-pin SIP 4000 pieces per 13-inch reel 1

A1366LKTTG-2-T TG (Formed) 4-pin SIP 4000 pieces per 13-inch reel 2.5

A1366LKTTG-5-T TG (Formed) 4-pin SIP 4000 pieces per 13-inch reel 5

A1366LKTTG-10-T TG (Formed) 4-pin SIP 4000 pieces per 13-inch reel 10

A1366LKTTN-1-T TN (Straight) 4-pin SIP 4000 pieces per 13-inch reel 1

A1366LKTTN-2-T TN (Straight) 4-pin SIP 4000 pieces per 13-inch reel 2.5

A1366LKTTN-5-T TN (Straight) 4-pin SIP 4000 pieces per 13-inch reel 5

A1366LKTTN-10-T TN (Straight) 4-pin SIP 4000 pieces per 13-inch reel 10

*Contact Allegro for additional packing options

Device parameters are specified across an extended ambient

temperature range: –40°C to 150°C. The A1366 sensor IC is provided in

an extremely thin case (1 mm thick), 4-pin SIP (single in-line package,

suffix KT) that is lead (Pb) free, with 100% matte tin leadframe plating.

• Wide ambient temperature range: –40°C to 150°C

• Immune to mechanical stress

• Extremely thin package: 1 mm case thickness

• AEC-Q100 automotive qualified

FEATURES AND BENEFITS (CONTINUED) DESCRIPTION (CONTINUED)

ABSOLUTE MAXIMUM RATINGS

Characteristic Symbol Notes Rating Unit

Forward Supply Voltage VCC 6 V

Reverse Supply Voltage VRCC –0.1 V

Forward Output Voltage VOUT 25 V

Reverse Output Voltage VROUT –0.1 V

Output Source Current IOUT(source) VOUT to GND 10 mA

Output Sink Current IOUT(sink) VCC to VOUT 10 mA

Operating Ambient Temperature TAL temperature range –40 to 150 °C

Storage Temperature Tstg –65 to 165 °C

Maximum Junction Temperature TJ(max) 165 °C

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

PINOUT DIAGRAM AND TERMINAL LIST TABLE

Terminal List Table

Number Name Function

1 VCC Input power supply, use bypass capacitor to connect to ground

2 VOUT Output signal

3 NC No connection; connect to GND for optimal ESD performance

4 GND Ground

2 3 41

Pinout Diagram

(Ejector pin mark on

opposite side)

THERMAL CHARACTERISTICS: May require derating at maximum conditions; see application information

Characteristic Symbol Test Conditions* Value Unit

Package Thermal Resistance RθJA On 1-layer PCB with exposed copper limited to solder pads 174 °C/W

*Additional thermal information available on the Allegro website

20 40 60 80 100 120 140 160 180

Temperature, T

(°C)

Power Dissipation, P

(mW)

300

400

200

100

600

500

800

700

900

Power Dissipation versus Ambient Temperature

θJA

= 174 ºC/W)

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Continued on the next page…

COMMON OPERATING CHARACTERISTICS: Valid through the full operating temperature range, TA, CBYPASS = 0.1 µF,

VCC = 5 V, unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Unit [1]

ELECTRICAL CHARACTERISTICS

Supply Voltage VCC 4.5 5.0 5.5 V

Supply Current ICC No load on VOUT – 10 15 mA

Power-On Time [2] tPO

TA = 25°C, CBYPASS = Open, CL = 1 nF, Sens =

2.5 mV/G, constant magnetic field of 320 G –78 – µs

Temperature Compensation

Power-On Time [2] tTC

TA = 150°C, CBYPASS = Open, CL= 1 nF, Sens =

2.5 mV/G, constant magnetic field of 320 G –30 – µs

Undervoltage Lockout (UVLO)

Threshold [2]

VUVLOH

TA = 25°C, VCC rising and device function

enabled – 4 – V

VUVLOL

TA = 25°C, VCC falling and device function

disabled – 3.5 – V

UVLO Enable/Disable Delay Time [2]

tUVLOE

TA = 25°C, CBYPASS = Open, CL = 1 nF, Sens =

2.5 mV/G, VCC Fall Time (5 V to 3 V) = 1.5 µs – 64 – µs

tUVLOD

TA = 25°C, CBYPASS = Open, CL = 1 nF, Sens =

2.5 mV/G, VCC Recover Time (3 V to 5 V) =

1.5 µs

– 14 – µs

Power-On Reset Voltage [2] VPORH TA = 25°C, VCC rising – 2.6 – V

VPORL TA = 25°C, VCC falling – 2.3 – V

Power-On Reset Release Time [2] tPORR TA = 25°C, VCC rising – 64 – µs

Supply Zener Clamp Voltage VzTA = 25°C, ICC = 30 mA 6.5 7.5 – V

Internal Bandwidth BWiSmall signal –3 dB, CL = 1 nF, TA = 25°C – 120 – kHz

Chopping Frequency [3] fCTA = 25°C – 500 – kHz

OUTPUT CHARACTERISTICS

Propagation Delay Time [2] tPD

TA = 25°C, magnetic field step of 320 G,

CL = 1 nF, Sens = 2.5 mV/G – 2.2 – µs

Rise Time [2] tR

TA = 25°C, magnetic field step of 320 G,

CL = 1 nF, Sens = 2.5 mV/G – 3.6 – µs

Response Time [2] tRESPONSE

TA = 25°C, magnetic field step of 320 G,

CL = 1 nF, Sens = 2.5 mV/G – 3.7 – µs

Output Saturation Voltage [2] VSAT(HIGH) TA = 25°C, RL(PULLDWN) = 10 kΩ to GND 4.7 – – V

VSAT(LOW) TA = 25°C, RL(PULLUP) = 10 kΩ to VCC – – 400 mV

Broken Wire Voltage [2] VBRK(HIGH) TA = 25°C, RL(PULLUP) = 10 kΩ to VCC – VCC – V

VBRK(LOW) TA = 25°C, RL(PULLDWN) = 10 kΩ to GND – 100 – mV

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

COMMON OPERATING CHARACTERISTICS (continued): Valid through the full operating temperature range, TA,

CBYPASS = 0.1 µF, VCC = 5 V, unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Unit [1]

OUTPUT CHARACTERISTICS (continued)

Noise BNTA = 25°C, CL = 1 nF, Bandwidth = BWi– 1.1 –mGRMS/√¯

(Hz)

DC Output Resistance ROUT –9–Ω

Output Load Resistance RL(PULLUP) VOUT to VCC 4.7 – – kΩ

RL(PULLDWN) VOUT to GND 4.7 – – kΩ

Output Load Capacitance [4] CLVOUT to GND – 1 10 nF

Output Slew Rate [5] SR Sens = 2.5 mV/G, CL = 1 nF – 230 – V/ms

ERROR COMPONENTS

Linearity Sensitivity Error [2][6] LinERR –1 < ±0.25 1 %

Symmetry Sensitivity Error [2] SymERR –1 < ±0.25 1 %

Ratiometry Quiescent Voltage Output

Error [2][7] RatERRVOUT(Q)

Through supply voltage range (relative to VCC

= 5 V) –1 0 1 %

Ratiometry Sensitivity Error [2][7] RatERRSens

Through supply voltage range (relative to VCC

= 5 V) – ±1 – %

[1] 1 G (gauss) = 0.1 mT (millitesla).

[2] See Characteristic Definitions section.

[3] fC varies up to approximately ± 20% over the full operating ambient temperature range, TA, and process.

[4] Output stability is maintained for capacitive loads as large as 10 nF.

[5] High-to-low transition of output voltage is a function of external load components and device sensitivity.

[6] Linearity applies to output voltage ranges of ±2 V from the quiescent output for bidirectional devices.

[7] Percent change from actual value at VCC = 5 V, for a given temperature, through the supply voltage operating range.

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

A1366LKT-1-T PERFORMANCE CHARACTERISTICS [1]: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V,

unless otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit [2]

Sensitivity [3] SensTA Measured using 600 G, TA = 25°C 0.975 1 1.025 mV/G

Sensitivity Drift through

Temperature Range ∆SensTC

TA = 25°C to 150°C –2.5 0 2.5 %

TA = –40°C to 25°C –2.5 0 2.5 %

Sensitivity Drift Due to

Package Hysteresis ∆SensPKG

TA = 25°C, after temperature cycling, 25°C to 150°C and back

to 25°C – ±1.25 – %

Sensitivity Drift Over

Lifetime [4] ∆SensLIFE

TA = –40°C to 150°C, shift after AEC-Q100 grade 0 qualification

testing – ±1 – %

Noise VN

TA = 25°C, CL = 1 nF – 3.15 – mVP-P

TA = 25°C, CL = 1 nF – 0.5 – mVRMS

Quiescent Output Voltage [5]

VOUT(Q)TA TA = 25°C 2.490 2.500 2.510 V

VOUT(Q)HT TA = 25°C to 150°C 2.490 2.500 2.510 V

VOUT(Q)LT TA = –40°C to 25°C 2.490 2.500 2.510 V

Quiescent Output Voltage

Drift Over Lifetime [4] ∆VOUT(Q)LIFE

TA = –40°C to 150°C, shift after AEC-Q100 grade 0 qualification

testing – ±2 – mV

[1] See Characteristic Performance Data section for parameter distributions across temperature range.

[2] 1 G (gauss) = 0.1 mT (millitesla).

[3] This parameter may drift a maximum of ΔSensLIFE over lifetime.

[4] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, cannot be guaranteed. Drift is a

function of customer application conditions. Contact Allegro MicroSystems for further information.

[5] This parameter may drift a maximum of ΔVOUT(Q)LIFE over lifetime.

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

A1366LKT-2-T PERFORMANCE CHARACTERISTICS [1]: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V,

unless otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit [2]

Sensitivity [3] SensTA Measured using 400 G, TA = 25°C 2.437 2.5 2.563 mV/G

Sensitivity Drift through

Temperature Range ∆SensTC

TA = 25°C to 150°C –2.5 0 2.5 %

TA = –40°C to 25°C –2.5 0 2.5 %

Sensitivity Drift Due to

Package Hysteresis ∆SensPKG

TA = 25°C, after temperature cycling, 25°C to 150°C and back

to 25°C – ±1.25 – %

Sensitivity Drift Over

Lifetime [4] ∆SensLIFE

TA = –40°C to 150°C, shift after AEC-Q100 grade 0 qualification

testing – ±1 – %

Noise VN

TA = 25°C, CL = 1 nF – 7.875 – mVP-P

TA = 25°C, CL = 1 nF – 1.25 – mVRMS

Quiescent Output Voltage [5]

VOUT(Q)TA TA = 25°C 2.490 2.500 2.510 V

VOUT(Q)HT TA = 25°C to 150°C 2.490 2.500 2.510 V

VOUT(Q)LT TA = –40°C to 25°C 2.490 2.500 2.510 V

Quiescent Output Voltage

Drift Over Lifetime [4] ∆VOUT(Q)LIFE

TA = –40°C to 150°C, shift after AEC-Q100 grade 0 qualification

testing – ±2 – mV

[1] See Characteristic Performance Data section for parameter distributions across temperature range.

[2] 1 G (gauss) = 0.1 mT (millitesla).

[3] This parameter may drift a maximum of ΔSensLIFE over lifetime.

[4] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, cannot be guaranteed. Drift is a

function of customer application conditions. Contact Allegro MicroSystems for further information.

[5] This parameter may drift a maximum of ΔVOUT(Q)LIFE over lifetime.

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

A1366LKT-5-T PERFORMANCE CHARACTERISTICS [1]: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless

otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit [2]

Sensitivity [3] SensTA Measured using 200 G, TA = 25°C 4.875 5 5.125 mV/G

Sensitivity Drift through

Temperature Range ∆SensTC

TA = 25°C to 150°C –2.5 0 2.5 %

TA = –40°C to 25°C –2.5 0 2.5 %

Sensitivity Drift Due to

Package Hysteresis ∆SensPKG

TA = 25°C, after temperature cycling, 25°C to 150°C and back

to 25°C – ±1.25 – %

Sensitivity Drift Over

Lifetime [4] ∆SensLIFE

TA = –40°C to 150°C, shift after AEC-Q100 grade 0 qualification

testing – ±1 – %

Noise VN

TA = 25°C, CL = 1 nF – 15.75 – mVP-P

TA = 25°C, CL = 1 nF – 2.5 – mVRMS

Quiescent Output Voltage [5]

VOUT(Q)TA TA = 25°C 2.490 2.500 2.510 V

VOUT(Q)HT TA = 25°C to 150°C 2.490 2.500 2.510 V

VOUT(Q)LT TA = –40°C to 25°C 2.490 2.500 2.510 V

Quiescent Output Voltage

Drift Over Lifetime [4] ∆VOUT(Q)LIFE

TA = –40°C to 150°C, shift after AEC-Q100 grade 0 qualification

testing – ±2 – mV

[1] See Characteristic Performance Data section for parameter distributions across temperature range.

[2] 1 G (gauss) = 0.1 mT (millitesla).

[3] This parameter may drift a maximum of ΔSensLIFE over lifetime.

[4] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, cannot be guaranteed. Drift is a

function of customer application conditions. Contact Allegro MicroSystems for further information.

[5]This parameter may drift a maximum of ΔVOUT(Q)LIFE over lifetime.

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

A1366LKT-10-T PERFORMANCE CHARACTERISTICS [1]: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V,

unless otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit [2]

Sensitivity [3] SensTA Measured using 100 G, TA = 25°C 9.75 10 10.25 mV/G

Sensitivity Drift through

Temperature Range ∆SensTC

TA = 25°C to 150°C –2.5 0 2.5 %

TA = –40°C to 25°C –2.5 0 2.5 %

Sensitivity Drift Due to

Package Hysteresis ∆SensPKG

TA = 25°C, after temperature cycling, 25°C to 150°C and back

to 25°C – ±1.25 – %

Sensitivity Drift Over

Lifetime [4] ∆SensLIFE

TA = –40°C to 150°C, shift after AEC-Q100 grade 0 qualification

testing – ±1 – %

Noise VN

TA = 25°C, CL = 1 nF – 31.5 – mVP-P

TA = 25°C, CL = 1 nF – 5 – mVRMS

Quiescent Output Voltage [5]

VOUT(Q)TA TA = 25°C 2.485 2.500 2.515 V

VOUT(Q)HT TA = 25°C to 150°C 2.485 2.500 2.515 V

VOUT(Q)LT TA = –40°C to 25°C 2.485 2.500 2.515 V

Quiescent Output Voltage Drift

Over Lifetime [4] ∆VOUT(Q)LIFE

TA = –40°C to 150°C, shift after AEC-Q100 grade 0 qualification

testing – ±2 – mV

[1] See Characteristic Performance Data section for parameter distributions across temperature range.

[2] 1 G (gauss) = 0.1 mT (millitesla).

[3] This parameter may drift a maximum of ΔSensLIFE over lifetime.

[4] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, cannot be guaranteed. Drift is a

function of customer application conditions. Contact Allegro MicroSystems for further information.

[5] This parameter may drift a maximum of ΔVOUT(Q)LIFE over lifetime.

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Propagaon Delay (t

)

00 G excitaon signal with 10%-90% rise me = 1 µs

ensivity = 2 mV/G, CBYPASS=0.1 µF, CL=1 nF

Input = 400 G Excitaon Signal

20% of Input

tPD = 2.2 µs

20% of Output

Output (VOUT, mV)

CHARACTERISTIC PERFORMANCE DATA

Response Time (t

RESPONSE

)

00 G excitaon signal with 10%-90% rise time = 1 µs

ensivity = 2 mV/G,

BYPASS=0.1 µF,

L=1 nF

Input = 400 G Excitaon Signal

80% of Input

RESPONSE

= 3.7 µs

80% of Output

Output (V

OUT

, mV)

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Power-On Time(t

)

400 G constant excitaon signal, with VCC 10%-90% rise me = 1.5 µs

Sensivity = 2 mV/G, C

BYPASS

= Open, C

=1 nF

VCC(min)

Supply (VCC, V)

tPO = 78 µs

90% of Output

Output (VOUT, V)

Rise Time (t

)

00 G excitaon signal with 10%-90% rise me = 1 µs

ensivity = 2 mV/G, CBYPASS=0.1 µF, CL=1 nF

Input = 400 G Excitaon Signal

10% of Output

= 3.6 µs

90% of Output

Output (V

OUT

, mV)

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

VCC(min)

Supply (VCC, V)

tUVLOD = 12 µs

90% of Output

Output (VOUT, V)

UVLO Disable Time (t

UVLOD

)

VCC 3 V-5 V recovery me = 1.5 µs

Sensivity = 2 mV/G,

BYPASS

= Open,

=1 nF

UVLO Enable Time (t

UVLOE

)

5 V-3 V fall me = 1.5 µs

Sensivity = 2 mV/G, C

BYPASS

=Open, C

=1 nF

UVLOL

Supply (V

, V)

UVLOE

= 63.6 µs

Output = 0 V

Output (V

OUT

, V)

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

CHARACTERISTIC DEFINITIONS

Power-On Time (tPO). When the supply is ramped to its operat-

ing voltage, the device requires a finite time to power its internal

components before responding to an input magnetic field.

Power-On Time, tPO , is defined as: the time it takes for the output

voltage to settle within ±10% of its steady state value under an

applied magnetic field, after the power supply has reached its

minimum specified operating voltage, VCC(min), as shown in

figure 1.

Temperature Compensation Power-On Time (tTC

). After

Power-On Time, tPO , elapses, tTC is also required before a valid

temperature compensated output.

Propagation Delay (tPD). The time interval between a) when

the applied magnetic field reaches 20% of it’s final value, and b)

when the output reaches 20% of its final value (see figure 2).

Rise Time (tR). The time interval between a) when the sensor IC

reaches 10% of its final value, and b) when it reaches 90% of its

final value (see Figure 2).

Response Time (tRESPONSE). The time interval between a) when

the applied magnetic field reaches 80% of its final value, and b)

when the sensor reaches 80% of its output corresponding to the

applied magnetic field (see Figure 3).

Quiescent Voltage Output (VOUT(Q)). In the quiescent state (no

significant magnetic field: B = 0 G), the output, VOUT(Q) , has a

Figure 1: Power-on Time definition

Figure 2: Propagation Delay and Rise Time definitions

Figure 3: Response Time definition

VCC

VCC(min.)

VOUT

90% VOUT

t1= time at which power supply reaches

minimum specified operating voltage

t2=

time at which output voltage settles

within ±10% of its steady state value

under an applied magnetic field

t1t2

tPO

(typ.)

Applied Magnetic Field

Transducer Output

(%)

Propagation Delay, tPD

Rise Time, tR

Applied Magnetic Field

Transducer Output

(%)

Response Time, t

RESPONSE

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

constant ratio to the supply voltage, VCC , throughout the entire

operating ranges of VCC and ambient temperature, TA

Sensitivity (Sens). The presence of a south polarity magnetic

field, perpendicular to the branded surface of the package face,

increases the output voltage from its quiescent value toward the

supply voltage rail. The amount of the output voltage increase is

proportional to the magnitude of the magnetic field applied.

Conversely, the application of a north polarity field decreases the

output voltage from its quiescent value. This proportionality is

specified as the magnetic sensitivity, Sens (mv/G), of the device,

and it is defined as:

VOUT(BPOS) – VOUT(BNEG)

BPOS – BNEG

Sens =,

(1)

where BPOS and BNEG are two magnetic fields with opposite

polarities.

Sensitivity Drift Through Temperature Range (ΔSensTC ).

Second order sensitivity temperature coefficient effects cause the

magnetic sensitivity, Sens, to drift from its expected value over

the operating ambient temperature range, TA . The Sensitivity

Drift Through Temperature Range, ∆SensTC , is defined as:

SensTA – SensEXPECTED(TA)

SensEXPECTED(TA)

∆SensTC =×

100%

(2)

Sensitivity Drift Due to Package Hysteresis (ΔSensPKG ).

Package stress and relaxation can cause the device sensitivity at TA

= 25°C to change during and after temperature cycling. The sensi-

tivity drift due to package hysteresis, ∆SensPKG

, is defined as:

Sens

(25°C)2

– Sens

(25°C)1

Sens(25°C)1

∆SensPKG =×

100% ,

(3)

where Sens(25°C)1 is the programmed value of sensitivity at TA

= 25°C, and Sens(25°C)2 is the value of sensitivity at TA = 25°C,

after temperature cycling TA up to 150°C and back to 25°C.

Linearity Sensitivity Error (LinERR ). The A1366 is designed to

provide a linear output in response to a ramping applied magnetic

field. Consider two magnetic fields, B1 and B2. Ideally, the sen-

sitivity of a device is the same for both fields, for a given supply

voltage and temperature. Linearity error is present when there is a

difference between the sensitivities measured at B1 and B2.

Linearity Error. is calculated separately for the positive

(LinERRPOS

) and negative (LinERRNEG

) applied magnetic fields.

Linearity Error (%) is measured and defined as:

Sens

BPOS2

SensBPOS1

SensBNEG2

SensBNEG1

1–

LinERRPOS =×

100% ,













1–

LinERRNEG =×

100% ,













(4)

where:

|VOUT(Bx) – VOUT(Q)|

SensBx=,

(5)

and BPOSx and BNEGx are positive and negative magnetic

fields, with respect to the quiescent voltage output such that

|BPOS2| = 2 × |BPOS1| and |BNEG2| = 2 × |BNEG1|.

Then:

Lin

ERR

max(

Lin

ERRPOS

, Lin

ERRNEG

)

(6)

Symmetry Sensitivity Error (SymERR ). The magnetic sensitiv-

ity of an A1366 device is constant for any two applied magnetic

fields of equal magnitude and opposite polarities. Symmetry

Error, SymERR (%), is measured and defined as:

SensBPOS

Sens

BNEG

1–

SymERR =×

100% ,













(7)

where SensBx is as defined in equation 7, and BPOSx and

BNEGx are positive and negative magnetic fields such that

|BPOSx| = |BNEGx|.

Ratiometry Error (RatERR ). The A1366 device features ratio-

metric output. This means that the Quiescent Voltage Output,

VOUT(Q)

, and magnetic sensitivity, Sens, are proportional to the

Supply Voltage, VCC. In other words, when the supply voltage

increases or decreases by a certain percentage, each characteristic

also increases or decreases by the same percentage. Error is the

difference between the measured change in the supply voltage

relative to 5 V, and the measured change in each characteristic.

The ratiometric error in Quiescent Voltage Output,

RatERRVOUT(Q) (%), for a given supply voltage, VCC

, is defined

as:

VOUT(Q)(VCC) / VOUT(Q)(5V)

/ 5 V

1–

RatERRVOUT(Q) =×

100%













(8)

The ratiometric error in magnetic sensitivity, RatERRSens (%), for

a given Supply Voltage, VCC

, is defined as:

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Sens(VCC) / Sens(5V)

VCC / 5 V

1–

RatERRSens =×

100% .













Power-On Reset Voltage (VPOR

). On power-up, to initialize

to a known state and avoid current spikes, the A1366 is held in

a Reset state. The Reset signal is disabled when VCC reaches

VUVLOH

and time tPORR has elapsed, allowing the output voltage

to go from a high impedance state into normal operation. Dur-

ing power-down, the Reset signal is enabled when VCC reaches

VPORL , causing the output voltage to go into a high impedance

state. (Note that detailed description of POR and UVLO opera-

tion can be found in the Functional Description section).

Power-On Reset Release Time (tPORR). When VCC rises to

VPORH , the Power-On Reset Counter starts. The A1366 output

voltage will transition from a high impedance state to normal

operation only when the Power-On Reset Counter has reached

tPORR and VCC has exceeded VUVLOH .

Undervoltage Lockout Threshold (VUVLO

). If VCC drops below

VUVLOL output voltage will be locked to GND. If VCC starts ris-

ing, the A1366 will come out of the Lock state when VCC reaches

VUVLOH

UVLO Enable/Disable Delay Time (tUVLO

). When a falling VCC

reaches VUVLOL , time tUVLOE is required to engage Undervoltage

Lockout state. When VCC rises above VUVLOH , time tUVLOD is

required to disable UVLO and have a valid output voltage.

Broken Wire Voltage (VBRK ). If the GND pin is disconnected

(broken wire event), the output voltage will go to VBRK(HIGH) (if

a load resistor is connected to VCC) or to VBRK(LOW) (if a load

resistor is connected to GND).

(9)

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

FUNCTIONAL DESCRIPTION

Power-On Reset (POR) and Undervoltage Lockout

(UVLO) Operation

The descriptions in this section assume: temperature = 25°C, no

output load (RL, CL

) , and no significant magnetic field is present.

• Power-Up. At power-up, as VCC ramps up, the output is in a

high impedance state. When VCC crosses VPORH (location [1]

in Figure 4 and [1'] in Figure 5), the POR Release counter starts

counting for tPORR= 64 µs. At this point, if VCC exceeds VUVLOH

= 4 V [2'], the output will go to VCC / 2 after tUVLOD = 14 µs [3'].

If VCC does not exceed VUVLOH = 4 V [2], the output will stay in

the high impedance state until VCC reaches VUVLOH = 4 V [3] and

then will go to VCC / 2 after tUVLOD = 14 µs [4].

• VCC drops below VCC(min)= 4.5 V. If VCC drops below VUVLOL

[4', 5], the UVLO Enable Counter starts counting. If VCC is still

below VUVLOL when counter reaches tUVLOE = 64 µs, the UVLO

function will be enabled and the ouput will be pulled near GND

[6]. If VCC exceeds VUVLOL before the UVLO Enable Counter

reaches 64 µs [5'] , the output will continue to be VCC

/ 2.

• Coming out of UVLO. While UVLO is enabled [6] , if

VCC exceeds VUVLOH [7] , UVLO will be disabled after

tUVLOD =14 µs, and the output will be VCC / 2 [8].

• Power-Down. As VCC ramps down below VUVLOL [6’, 9], the

UVLO Enable Counter will start counting. If VCC is higher than

VPORL = 2.3 V when the counter reaches tUVLOE = 64 µs, the

UVLO function will be enabled and the ouput will be pulled

near GND [10]. The output will enter a high impedance state as

VCC goes below VPORL [11]. If VCC falls below VPORL before the

UVLO Enable Couner reaches 64 µs, the output will transition

directly into a high impedance state [7'].

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

tUVLOE =

64 µs

tPORR =

64 µs

tPORR =

64 µs

tUVLOD =

14 µs

64 µs

tUVLOD = 14 µs

tUVLOD =

14 µs

UVLOE

64 µs

1’ 2’ 4’ 5’ 6’ 7’

3’

5.0

VUVLOH 4.0

VPORH 2.6

VPORL 2.3

VPORH 2.6

VPORL 2.3

VUVLOL 3.5

2.5

High Impedance High Impedance

Slope =

VCC /

Slope =

VCC /

GND Time

Time

GND

VCC

VOUT

5.0

2.5

GND

VOUT

356711

Slope =

VCC /

64 µs

Figure 4: POR and UVLO Operation: Slow Rise Time case

Figure 5: POR and UVLO Operation: Fast Rise Time case

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

GND

Connecting VOUT to RL(PULLUP)

VOUT

A1366

VCC

VCC VCC

RL(PULLUP)

GND

VOUT

A1366

VCC

RL(PULLDWN)

Connecting VOUT to RL(PULLDWN)

L(typ)

BYPASS

L(PULLDWN)

GND

VOUT

A1366

VCC

V+

Typical Application Drawing

Figure 6: Connections for Detecting Broken Ground Wire

Detecting Broken Ground Wire

If the GND pin is disconnected, node A becoming open

(Figure 6), the VOUT pin will go to a high impedance state. Out-

put voltage will go to VBRK(HIGH) if a load resistor RL(PULLUP) is

connected to VCC or to VBRK(LOW) if a load resistor RL(PULLDWN)

is connected to GND. The device will not respond to any applied

magnetic field.

If the ground wire is reconnected, A1366 will resume normal

operation.

EEPROM Error Checking And Correction

Hamming code methodology is implemented for EEPROM

checking and correction. The device has ECC enabled after

power-up. If an uncorrectable error has occurred, the VOUT pin

will go to high impedance and the device will not respond to

applied magnetic field.

Output voltage will go to VBRK(HIGH) if a load resistor

RL(PULLUP) is connected to VCC or to VBRK(LOW) if a load resistor

RL(PULLDOWN) is connected to GND.

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Chopper Stabilization Technique

When using Hall-effect technology, a limiting factor for total

accuracy is the small signal voltage developed across the Hall

element. This voltage is disproportionally small relative to the

offset that can be produced at the output of the Hall sensor. This

makes it difficult to process the signal while maintaining an accu-

rate, reliable output over the specified operating temperature and

voltage ranges. Chopper stabilization is a unique approach used

to minimize Hall offset on the chip.

The Allegro technique removes key sources of the output drift

induced by thermal and mechanical stresses. This offset reduction

technique is based on a signal modulation-demodulation process.

The undesired offset signal is separated from the magnetic field-

induced signal in the frequency domain, through modulation. The

subsequent demodulation acts as a modulation process for the

offset, causing the magnetic field-induced signal to recover its

original spectrum at base band, while the DC offset becomes a

high-frequency signal. The magnetic-sourced signal then can pass

through a low-pass filter, while the modulated DC offset is sup-

pressed. This high-frequency operation allows a greater sampling

rate, which results in higher accuracy and faster signal-processing

capability. This approach desensitizes the chip to the effects

of thermal and mechanical stresses, and produces devices that

have extremely stable quiescent Hall output voltages and precise

recoverability after temperature cycling. This technique is made

possible through the use of a BiCMOS process, which allows the

use of low-offset, low-noise amplifiers in combination with high-

density logic integration and a proprietary, dynamic notch filter.

The new Allegro filtering techniques are far more effective at

suppressing chopper induced signal noise compared to the previ-

ous generation of Allegro chopper stabilized devices.

Concept of Chopper Stabilization

Amp

Regulator

Clock/Logic

Hall Element

Tuned

Filter

Anti-Aliasing

LP Filter

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

DThermoplastic Molded Lead Bar for alignment during shipment

Active Area Depth 0.37 mm REF

Hall element, not to scale

0.54

REF

0.54

REF

12.14±0.05

1.27 NOM

0.89

MAX

0.89

MAX

10°

2.60

1.00

2 431

5.21 +0.08

–0.05

5.21 +0.08

–0.05

3.43 +0.08

–0.05

0.41 +0.08

–0.05

1.50 +0.08

–0.05

0.20 +0.08

–0.05

1.00 +0.08

–0.05

1.00 +0.08

–0.05

Mold Ejector

Pin Indent

Branded

Face

For Reference Only; not for tooling use (reference DWG-9202)

Dimensions in millimeters

Dimensions exclusive of mold flash, gate burrs, and dambar protrusions

Exact case and lead configuration at supplier discretion within limits shown

Gate and tie bar burr area

Dambar removal protrusion (16X)

Standard Branding Reference View

N = Device part number

Y = Last two digits of year of manufacture

W = Week of manufacture

YYWW

NNNN

Branding scale and appearance at supplier discretion

Package KT, 4-Pin SIP, TN Leadform

PACKAGE OUTLINE DRAWING

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Package KT, 4-Pin SIP, TF Leadform

NOTES:

1) LEAD TRIM AND FORMING OPERATIONS PERFORMED ON

ALLEGRO SUPPLIED MATERIAL.

2) FOR DIMENSIONS AND TOLERANCING ON SUPPLIED

DEVICES, REFER TO ALLEGRO DWG-9202.

3) TRUE POSITION AND PROFILE TOLERANCE APPLIES ALONG

EACH LEAD IN A ZONE STARTING FROM THE LEAD TIP AND

ENDING NO MORE THAN 10 mm IN FROM THE TIP.

R.20 (4×)

(3.43)

(5.21)

(9.33)

(9.54)

LEADS PRIOR

TO BENDING

PIN 1

ACTIVE

SURFACE

4.5

2.4

0.6

2.352.35

0.4 C

(4×) SEE NOTE 3

1.97

3.24

0.70

4.51

0.41

PIN 1

PIN 2

PIN 4

PIN 3

SECTION A-A

(PINS 1 AND 4)

SCALE 5:1

5.49

4.30

91.3° ±1.0°

B(REF)

0.20 A B

0.2 D

(PIN 1) SEE NOTE 3

(PIN 4) SEE NOTE 3

SECTION B-B

(PINS 2 AND 3)

SCALE 5:1

5.49

91.3° ±1.0°

4.30

0.15 E

(PIN 3) SEE NOTE 3

0.20 A B

(PIN 2) SEE NOTE 3

(REF) METRIC TOLERANCES

X ± 10%

X.X ± 0.25

X.XX ± 0.10

X.XXX ± 0.025

ANGULAR ± 0.5°

ALL SURFACES TO BE 32 µin

(0.80 µm) OR BETTER

BREAK ALL SHARP EDGES 0.015"

× 0.015" (0.4 mm × 0.4 mm)

HOLD ALL DIMS AFTER

PLATING

REFERENCE DWG-0000425

0.762

5.2

0.508

4.7

PCB LAYOUT REFERENCE VIEW

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Package KT, 4-Pin SIP, TG Leadform

NOTES:

1) LEAD TRIM AND FORMING OPERATIONS PERFORMED ON

ALLEGRO SUPPLIED MATERIAL.

2) FOR DIMENSIONS AND TOLERANCING ON SUPPLIED

DEVICES, REFER TO ALLEGRO DWG-9202.

3) TRUE POSITION AND PROFILE TOLERANCE APPLIES ALONG

EACH LEAD IN A ZONE STARTING FROM THE LEAD TIP AND

ENDING NO MORE THAN 10 mm IN FROM THE TIP.

METRIC TOLERANCES

X ± 10%

X.X ± 0.25

X.XX ± 0.10

X.XXX ± 0.025

ANGULAR ± 0.5°

ALL SURFACES TO BE 32 µin

(0.80 µm) OR BETTER

BREAK ALL SHARP EDGES 0.015"

× 0.015" (0.4 mm × 0.4 mm)

HOLD ALL DIMS AFTER

PLATING

REFERENCE DWG-0000622

PIN 1

ACTIVE

SURFACE

91.3° ±1.3° 91.3° ±1.3° 2.30

2×

2.30

2×

0.4 B

// 0.2 CZ B

PINS 1,4

0.4 B

// 0.15 CZ B

PINS 2,3

4.3

4.1

3.81

1.27

2.54

ZERO POINT FOR

LEAD TIP POSITION

MEASUREMENT

PIN 1

PIN 2

PIN 4

PIN 3

0.4 AB

4 LEAD TIPS

DATUM TARGETS

SCALE 10 : 1

(5.2) C

0.6 0.6

PIN 1

2.54

1.7

2.3

0.762

5.2

0.508

4.7

PCB LAYOUT REFERENCE VIEW

Low Noise, High Precision, Factory-Programmed Linear Hall-Effect Sensor IC

with Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output

A1366

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

REVISION HISTORY

Number Date Description

– May 1, 2014 Initial release

1 January 30, 2018 Added EEPROM Error Checking and Correction section (page 18)

2 January 28, 2019 Minor editorial updates

3 March 18, 2019 Added TF and TG leadforms

4 April 26, 2019 Added TF and TG footprints

For the latest version of this document, visit our website:

www.allegromicro.com

Allegro MicroSystems reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit

improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the

information being relied upon is current.

Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of

Allegro’s product can reasonably be expected to cause bodily harm.

The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems assumes no responsibility for its use; nor

for any infringement of patents or other rights of third parties which may result from its use.

Copies of this document are considered uncontrolled documents.