5962G9655102VXA - Aeroflex Incorporated

UT54ACTS153E

Radiation-Hardened

Dual 4 to 1 Multiplexers

January 2004

www.aeroflex.com/radhard

FEATURES

• 0.6µm CRH CMOS Process

- Latchup immune

• High speed

• Low power consumption

• Wide power supply operating range of 3.0V to 5.5V

• Available QML Q or V processes

• 16-lead flatpack

DESCRIPTION

The UT54ACTS153E is a dual four-to-one line selectors/mul-

tiplexer. Common inputs A and B select a value from one of

four sources for each section and routes the value from each

section to their respective outputs. Separate strobe inp uts, G

are provided for each of the two four-line sections.

The device is characterized over the full military temperature

range of -55°C to +125°C.

FUNCTION TABLE

PINOUT 16-Lead Flatpack

Top View

LOGIC SYMBOL

SELECT

INPUTS DATA INPUTS OUTPUT

CONTROL OUTPUT

B A C0 C1 C2 C3 GY

X X X X X X H L

L L L X X X L L

L L H X X X L H

L H X L X X L L

L H X H X X L H

H L X X L X L L

H L X X H X L H

H H X X X L L L

H H X X X H L H

VDD

1C3

1C2

1C1

1C0

2C3

2C2

2C1

2C0

VSS 2Y

(14)

A(2)

MUX

Note:

1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC

Publication 617-12.

(1)

1G EN

(6)

1C0 0

(5)

1C1 (4)

1C2 (3)

1C3 (15)

2G (10)

2C0 (11)

2C1

(7) 1Y

2C2 (13)

2C3

(9) 2Y

(12)

---

LOGIC DIAGRAM

(7) 1Y

(9) 2Y

(1)

(6)

(5)

(4)

(3)

(2)

(14)

(10)

(11)

(12)

(13)

2C3

2C2

2C1

2C0

1C3

1C2

1C1

1C0

(15)

OUTPUT

CONTROL

OUTPUT

CONTROL 2G

DATA 1

DATA 2

SELECT

RADIATION HARDNE SS SPECIFICATIONS 1

Notes:

1. Logic will not latchup during radiation ex posure within the limits defined in the table.

2. Device storage elements are immune to SEU affects.

ABSOLUTE MAXIMUM RATINGS1

Note:

1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these

or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

RECOMMENDED OPERATING CONDITIONS

PARAMETER LIMIT UNITS

Total Dose 1.0E6 rads(Si)

SEU Thresh old 280 MeV-cm2/mg

SEL Threshold 120 MeV-cm2/mg

Neutron Fluence 1.0E14 n/cm2

SYMBOL PARAMETER LIMIT UNITS

VDD Supply voltage -0.3 to 7.0 V

VI/O Vol t a ge any pin -.3 to VDD +.3 V

TSTG Storage Temperature range -65 to +150 °C

TJMaximum junction temperature +175 °C

TLS Lead temperature (soldering 5 seconds) +300 °C

ΘJC Thermal resistance junction to case 20 °C/W

IIDC input current ±10 mA

PDMaximum power dissipation 1 W

SYMBOL PARAMETER LIMIT UNITS

VDD Supply voltage 3.0 to 5.5 V

VIN Input voltage any pin 0 to VDD V

TCTemperature range -55 to +125 °C

DC ELECTRICAL CHARACTERISTICS FOR THE UT54ACTS153E7

( VDD = 3.0V to 5.5V; VSS = 0V6; -55°C < TC < +125°C)

Notes:

1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%, -

50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above spec ified range, but are

guaranteed to VIH(min) and VIL(max).

2. Supplied as a design limit but not guaranteed or tested.

3. Per MIL-PRF-38535, for current density ≤5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765pF/

MHz.

4. Not more than one output may be shorted at a time for maximum duration of one second .

5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at

frequency of 1MHz and a signal amplitude of 50mV rms maximum.

6. Maximum allowable relative shift equals 50mV.

7. All specifications valid for radiation dose ≤ 1E6 rads(Si) per MIL-STD-883 Method 1019 Condition B.

8. Power does not include power contribution of any TTL ou tput sink current

9. Power dissipation specified per switching output.

10. This value is guaranteed based on characterization data, but not tested.

SYMBOL Description CONDITION VDD MIN MAX UNIT

VIL Low-level input voltage 13.0V 0.8 V

5.5V 0.8

VIH High-level input voltage 13.0V 2.0 V

5.5V 2.75

IIN Input leakage current VIN = VDD or VSS 5.5V -1 1µA

VOL Low-level output voltage 3IOL = 6mA 3.0V 0.4 V

IOL = 8mA 4.5V 0.4 V

VOH High-level output voltage 3IOH = -6mA 3.0V 2.4 V

IOH= -8mA 4.5V 3.15 V

IOS Short-circuit output current 2 ,4 VO = VDD and VSS 3.0V -100 100 mA

5.5V -200 200

IOL Low level output current10 VIN = VDD or VSS

VOL = 0.4V

3.0V 6mA

5.5V 8

IOH High level output current10 VIN = VDD or VSS

VOH = VDD-0.4V

3.0V -6 mA

5.5V -8

Ptotal Power dissipatio n 2, 8, 9 CL = 50pF 5.5V

3.0V

2.1

0.84 mW/

MHz

IDDQ Quiescent Supply Current VIN = VDD or VSS 5.5V 10 µA

∆IDDQ Quiescent Supply Current Delta For input under test

VIN = VDD - 2.1V

For all other inputs

VIN = VDD or VSS

5.5V 1.6 mA

CIN Input capacitance 5ƒ = 1MHz 0V 15 pF

COUT Output capacitance 5 ƒ = 1MHz 0V 15 pF

AC ELECTRICAL CHARACTERIST ICS FOR THE UT54 ACTS153 E 2

(VDD = 3.0V to 5.5V; VSS = 0V 1, -55°C < TC < +125°C)

Notes:

1. Maximum allowable relative shift equals 50mV.

2. All specifications valid for radiation dose ≤ 1E6 rads(Si) per MIL-STD-883 Method 1019 Condition B.

SYMBOL PARAMETER CONDITION VDD MINIMUM MAXIMUM UNIT

tPLH1 Data to output Yn CL = 30pF 3.0V & 3.6V 212 ns

4.5V & 5.5V 2 8

CL = 50pF 3.0V & 3.6V 216 ns

4.5V & 5.5V 212

tPHL1 Data to output Yn CL = 30pF 3.0V & 3.6V 116 ns

4.5V & 5.5V 112

CL = 50pF 3.0V & 3.6V 120 ns

4.5V & 5.5V 116

tPLH2 Strobe to output Yn CL = 30pF 3.0V & 3.6V 114 ns

4.5V & 5.5V 110

CL = 50pF 3.0V & 3.6V 118 ns

4.5V & 5.5V 114

tPHL2 Strobe to output Yn CL = 30pF 3.0V & 3.6V 115 ns

4.5V & 5.5V 111

CL = 50pF 3.0V & 3.6V 119 ns

4.5V & 5.5V 111

tPLH3 Select to output Yn CL = 30pF 3.0V & 3.6V 214 ns

4.5V & 5.5V 210

CL = 50pF 3.0V & 3.6V 218 ns

4.5V & 5.5V 214

tPHL3 Select to output Yn CL = 30pF 3.0V & 3.6V 216 ns

4.5V & 5.5V 212

CL = 50pF 3.0V & 3.6V 220 ns

4.5V & 5.5V 216

Packaging

Ordering Information UT54ACTS153E

I/O Type:

ACTS = TTL compatible I/O level

Part Number:

153E = Dual 4-to-1 Multiplexers

Package Type:

U = 16-lead ceramic bottom-brazed dual-in-line Flatpack

Screening: (Note 3)

C = Military Temperature Range (-55

C to +125

Lead Finish: (Notes 1 & 2)

A = Solder

C = Gold

X = Optional

UT54 *** ****

***

Notes:

1. Lead finish (A, C, or X) must be spe cified.

2. If an "X" is specified when ordering, th en the part marking will ma tc h the lead finish and wi ll be e ither "A" (solder) or "C " (gold).

3. Military Temperature Range flo w per Aeroflex M anufacturing Flows Docum ent. Devices have 48 hours of burn-i n a nd a re test at -55

room temperatur e, and 125

C. Radiation characterisitics are neither tested nor guaranteed and may not be specified.

UT54ACTS153E: SMD

Drawing Number:

96551 = UT54ACTS153E

Device Type:

02 = TID per MIL-STD-883 TM1019 Condition B

Package Type:

X = 16-lead ceramic bottom-brazed dual-in-line Flatpack

Lead Finish: (Notes 1 & 2)

A = Solder

C = Gold

X = Optional

5962 ***** ** * *

Notes:

1. Lead finish (A, C, or X) must be specified.

2. If an "X" is specified when ordering, then the part marking will match the lead finish and will be either "A" (solder) or "C" (gold).

3. Total dose radiation must be specified when ordering. QML V is not available without radiation testing.

Total Dose: (Notes 3 & 4)

R = 1E5 rads(Si)

F = 3E5 rads(Si)

G = 5E5 rads(Si)

H = 1E6 rads(Si)

03 = TID per MIL-STD-883 TM1019 Condition A

Class Designator:

Q = QML Class Q

V = QML Class V

4. Device type 02 is only offered with a TID tolerance guarantee of 3E5 rads(Si) or 1E6 rads(Si) and is tested in accordance with

MIL-STD-883 Test Method 1019 Condition B. Device type 03 is only offered with a TID tolerance guarantee of 1E5 rads(Si),

3E5 rads(Si), and 5E5 rads(Si), and is tested in accordance with MIL-STD-883 Test Method 1019 Condition A.

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make changes to any products and services herein at any time

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