Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 60V
▼ Lower On-resistance RDS(ON) 3.5mΩ
▼ Fast Switching Characteristic ID165A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@Tc=25℃A
ID@Tc=100℃A
IDM A
PD@Tc=25℃W
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 0.75 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W
Data and specifications subject to change without notice
201104121
Thermal Data Parameter
1
Operating Junction Temperature Range -55 to 150
Continuous Drain Current, VGS @ 10V 105
Pulsed Drain Current1300
Storage Temperature Range
Total Power Dissipation 166
-55 to 150
Gate-Source Voltage +20
Continuous Drain Current, VGS @ 10V3120
Continuous Drain Current (Chip) 165
Total Power Dissipation 2
AP9992GP-HF
Halogen-Free Product
Parameter Rating
Drain-Source Voltage 60
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness. GDSTO-220(P)
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=40A - - 3.5 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V
gfs Forward Transconductance VDS=10V, ID=40A - 80 - S
IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge ID=40A - 135 216 nC
Qgs Gate-Source Charge VDS=48V - 21 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 75 - nC
td(on) Turn-on Delay Time VDS=30V - 28 - ns
trRise Time ID=40A - 115 - ns
td(off) Turn-off Delay Time RG=3.3Ω-55-ns
tfFall Time VGS=10V - 100 - ns
Ciss Input Capacitance VGS=0V - 5500 8800 pF
Coss Output Capacitance VDS=25V - 930 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 670 - pF
RgGate Resistance f=1.0MHz - 2 4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=40A, VGS=0V - - 1.3 V
trr Reverse Recovery Time IS=10A, VGS=0V, - 60 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 130 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9992GP-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP9992GP-HF
0
40
80
120
160
024681012
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
9.0V
8.0V
7.0V
VG=6.0V
0
50
100
150
200
250
300
0 4 8 12 16 20 24
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
9.0V
8.0V
7.0V
VG=6.0V
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=40A
VG=10V
0
10
20
30
40
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
0.0
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized VGS(th) (V)
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
T j , Junction Temperature ( oC)
Normalized BVDSS (V)
ID=250uA
ID=1mA
AP9992GP-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
1
10
100
1000
0.01 0.1 1 10 100 1000
VDS ,Drain-to-Source Voltage (V)
ID (A)
TC=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
10
12
0 40 80 120 160
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I
D=40A
VDS =48V
0
2000
4000
6000
8000
1 5 9 13 17 21 25 29
VDS ,Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
Operation in this area
limited by RDS(ON)
