Memory Module Specifications KVR1333D3S9/8G 8GB 2Rx8 1G x 64-Bit PC3-10600 CL9 204-Pin SODIMM Important Information: The module defined in this data sheet is one of several configurations available under this part number. While all configurations are compatible, the DRAM combination and/or the module height may vary from what is described here. DESCRIPTION SPECIFICATIONS This document describes ValueRAM's 1G x 64-bit (8GB) CL(IDD) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8, memory Row Cycle Time (tRCmin) 49.5ns (min.) module, based on sixteen 512M x 8-bit FBGA components. The 260ns (min.) SPD is programmed to JEDEC standard latency DDR3-1333 Refresh to Active/Refresh Command Time (tRFCmin) timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses gold Row Active Time (tRASmin) 36ns (min.) contact fingers. The electrical and mechanical specifications Power (Operating) 1.200W* UL Rating 94 V - 0 Operating Temperature 0o C to 85o C FEATURES Storage Temperature -55o C to +100o C * JEDEC standard 1.5V (1.425V ~1.575V) Power Supply *Power will vary depending on the SDRAM used. * VDDQ = 1.5V (1.425V ~ 1.575V) * 667MHz fCK for 1333Mb/sec/pin * 8 independent internal bank * Programmable CAS Latency: 9, 8, 7, 6 * Programmable Additive Latency: 0, CL - 2, or CL - 1 clock * Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) * 8-bit pre-fetch * Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] * Bi-directional Differential Data Strobe * Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) * On Die Termination using ODT pin * Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C * Asynchronous Reset * PCB: Height 1.18" (30mm), double sided component are as follows: 9 cycles Continued >> Document No. VALUERAM1032-001.A00 11/16/11 Page 1 MODULE DIMENSIONS: (units = millimeters) Document No. VALUERAM1032-001.A00 Page 2