S7986-01 - Hamamatsu Photonics K.K.

The S7986-01 and S7987-01 are a family of FT-CCD area image sensors specifically designed for high speed operation. A high frame rate is

attained by employing a wide band width on-chip amplifier. In area scan operation, The S7986-01 and S7987-01 can be used as a high frame rate

camera, and 2/3-inch NTSC B/W TV correspondence. The S7986-01 and S7987-01 also feature low dark signal (MPP mode operation). The

S7986-01 and S7987-01 have an effective pixel size of 14 × 14 µm and is available in image areas of 9.212 (H) × 6.860 (V) mm.

One-stage peltier cooler is built into the package for thermoelectric cooling (S7987-01). At room temperature operation, the device can be cooled

down to -10 ˚C (typ.) without using any other cooling technique. In addition, since both the CCD chip and the peltier cooler are hermetically

sealed, no dry air is required, thus allowing easy handling.

Features Applications

IMAGE SENSOR

CCD area image sensor

Back-thinned FT-CCD for low-light-level NTSC B/W TV application

S7986-01, S7987-01

■ Selection and order guide

Type No. Cooling Number of

total pixels

Number of

active pixels

Active area

[mm (H) × mm (V)]

S7986-01 Non-cooled

S7987-01 One-stage TE-cooled 680 × 500 658 × 490 9.212 × 6.860

■ General ratings

Parameter Specification

CCD structure Frame transfer (2/3-inch NTSC B/W TV correspondence)

Pixel size 14 (H) × 14 (V) µm

Vertical clock phase 2-phase

Horizontal clock phase 2-phase

Output circuit Two-stage MOSFET source follower

Package 24-pin ceramic package

Window*1 Sapphire

*1: Temporary window type (ex. S7986-01N) is available upon request.

● High-speed on-chip amplifier

(14 MHz, 2/3-inch NTSC B/W TV correspondence)

● Greater than 90% quantum efficiency

● Wide spectrum range

● MPP operation

● Non-cooled types: S7986-01

One-stage TE-cooled types: S7987-01

(Two-stage TE-cooled types are optional)

● High-speed UV imaging

● Semiconductor inspection

● Microscope

CCD area image sensor

S7986-01, S7987-01

■ Absolute maximum ratings (Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Operating temperature*2 Topr -50 - +30 °C

Storage temperature Tstg -50 - +70 °C

OD voltage VOD -0.5 - +25 V

RD voltage VRD -0.5 - +18 V

ISV voltage VISV -0.5 - +18 V

ISH voltage VISH -0.5 - +18 V

IGV voltage VIG1V, VIG2V -10 - +15 V

IGH voltage VIG1H, VIG2H -10 - +15 V

SG voltage VSG -10 - +15 V

OG voltage VOG -10 - +15 V

RG voltage VRG -10 - +15 V

TG voltage VTG -10 - +15 V

Vertical clock voltage (image area) VP1VI, VP2VI -10 - +15 V

Vertical clock voltage (storage area) VP1VS, VP2VS -10 - +15 V

Horizontal clock voltage VP1H, VP2H -10 - +15 V

*2: Chip temperature

■ Operating conditions (MPP mode, Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Output transistor drain voltage VOD 12 15 18 V

Reset drain voltage VRD 11.5 12 12.5 V

Output gate voltage VOG 1 3 5 V

Substrate voltage VSS - 0 - V

Vertical input source VISV - VRD - V

Horizontal input source VISH - VRD - V

Vertical input gate VIG1V, VIG2V -9 -8 - V

Test point

Horizontal input gate VIG1H, VIG2H -9 -8 - V

High VP1VIH, VP2VIH 4 6 8 Vertical shift register

clock voltage (Image area) Low VP1VIL, VP2VIL -9 -8 -7 V

High VP1VSH, VP2VSH 4 6 8 Vertical shift register

clock voltage (Storage area) Low VP1VSL, VP2VSL -9 -8 -7 V

High VP1HH, VP2HH 4 6 8 Horizontal shift register

clock voltage Low VP1HL, VP2HL -9 -8 -7 V

High VSGH 4 6 8

Summing gate voltage Low VSGL -9 -8 -7

High VRGH 4 6 8

Reset gate voltage Low VRGL -9 -8 -7 V

High VTGH 4 6 8

Transfer gate voltage Low VTGL -9 -8 -7

External load resistance RL 2.0 2.2 2.4 kΩ

■ Electrical characteristics (Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Signal output frequency fc - 1 14 MHz

Vertical shift register capacitance

(Image area)

CP1VI

CP2VI - 3000 - pF

Vertical shift register capacitance

(Storage area)

CP1VS

CP2VS - 3000 - pF

Horizontal shift register capacitance CP1H, CP2H - 90 - pF

Summing gate capacitance CSG - 30 - pF

Reset gate capacitance CRG - 30 - pF

Charge transfer gate capacitance CTG - 70 - pF

Transfer efficiency*3 CTE 0.99995 0.99999 - -

DC output level Vout - 8 - V

Output impedance Zo - 500 - Ω

Power consumption*4 P - 60 - mW

*3: Charge transfer efficiency per pixel, measured at half of the full well capacity.

*4: Power consumption of the on-chip amplifier plus load resistance

CCD area image sensor

S7986-01, S7987-01

Quantum efficiency (%)

Wavelength (nm)

(Typ. Ta=25 ˚C)

200 400 600 800 1000 1200

100

Front-illuminated CCD

(UV coated)

Back-thinned CCD

KMPDB0058EB

■ Spectral response (without window)* 12

100 200

Wavelength (nm)

Transmittance (%)

300 400 500 600 700 800 900 1000

100 (Typ. Ta=25 ˚C)

Sapphire

KMPDB0101EB

■ Spectral transmittance characteristic

of window material

■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)

Parameter Symbol Min. Typ. Max. Unit

Saturation output voltage Vsat - Fw × Sv - V

Vertical 30 65 -

Full well capacity Horizontal Fw 60 130 - ke-

CCD node sensitivity Sv 1.5 2.0 - µV/e-

25 °C - 50 500 Dark current*5

(MPP mode) 0 °C DS - 5 50 e-/pixel/s

Readout noise*6 Nr - 150 300 e-rms

Dynamic range (area scanning)*7 DR 200 430 - -

Photo response non-uniformity*8 PRNU - - ±10 %

Spectral response range λ - 200 to 1100 - nm

White spots - - 0 -

Point defect*9 Black spots - - 10 -

Cluster defect*10 - - 3 -

Blemish

Column defect*11

- - 0 -

*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.

*6: -50 °C, Operating frequency is 12 MHz.

*7: Dynamic range (DR) = Full well/Readout noise

*8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)

*9: White spots

Pixels whose dark current is higher than 1 ke- after one-second integration at 0 °C

Black spots

Pixels whose sensitivity is lower than one-half of the average pixel output (measured with uniform light producing one-half of

the saturation charge)

*10: 2 to 9 contiguous defective pixels

*11: 10 or more contiguous defective pixels

Fixed pattern noise (peak to peak)

Signal × 100

Photo response non-uniformity (PRNU) (%) =

*14: Spectral response with sapphire is decreased according to the

spectral transmittance characteristic of window material.

CCD area image sensor

S7986-01, S7987-01

● Window material

Type no. Window material

S7986-01

S7987-01

Sapphire*13

(option: window-less)

*13: Hermetic sealing

■ Dark current vs. temperature

Temperature (˚C)

Dark current (e

/pixel/s)

-50 -40 -30 -20 0-10 10 20 30

0.01

0.1

100 (Typ.)

KMPDB0306EA

KMPDC0098EA

■ Device structure (Conceptual drawing of top view)

10-bevel

490 image pixels500 storage pixels

4 blank pixels

Thinning

12345

...

490

658

22-bevel

658 signal out

CCD area image sensor

S7986-01, S7987-01

KMPDC0099EB

■ Timing chart (2-line binning TV r ate operation)

Parameter Symbol Min. Typ. Max. Unit

Pulse width Tpwv 1 - - µs

P1VI, P2VI, P1VS, P2VS, TG*14

Rise and fall times Tprv, Tpfv 20 - - ns

Pulse width Tpwh 35 - - ns

Rise and fall times Tprh, Tpfh 10 - - ns

P1H, P2H*14



Duty ratio - - 50 - %

Pulse width Tpws 35 - - ns

Rise and fall times Tprs, Tpfs 10 - - ns

SG

Duty ratio - - 50 - %

Pulse width Tpwr 15 - - ns

RGRise and fall times Tprr, Tpfr 5 - - ns

TG - P1HOverlap timeTovr 3 - - µs

*14: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude.



P1VI

P2VI

P1VS

P2VS, TG

P1H

P2H, SG

P2VS, TG

P1H

P2H, SG

Shutter has to be closed (vertical transfer)

Tpwv

Shutter has to be open.

Tpwr

D1 D2 D3

Tovr Tpwh, Tpws

Enlarged view

1234

CCD area image sensor

S7986-01, S7987-01

KMPDA0104EB

■ Dimensional outlines (unit: mm)

3.0

Photosensitive surface

4.0 ± 0.44

2.4 ± 0.15

4.8 ± 0.49

3.4 ± 0.44

Window 12.0*

22.9 ± 0.3

22.4 ± 0.3

Active area 6.860

9.212

12.0*

44.0 ± 0.44

2.54 ± 0.13

1st pin index mark

(24 ×)

0.5 ± 0.05

Index mark

* Size of window that guarantees the transmittance in the

“Spectral transmittance characteristics of window material” graph.

(24 ×)

0.5 ± 0.05

6.9 ± 0.63

1.0

3.0

6.3 ± 0.63

4.8 ± 0.15

Photosensitive surface

7.7 ± 0.68

1st pin index mark

9.212

4.0

19.0

22.4 ± 0.3

22.9 ± 0.3

44.0 ± 0.44

52.0

60.0 ± 0.3

2.54 ± 0.13

Window 12.0*

Active area 6.860

12.0*

Index mark

* Size of window that guarantees the transmittance in the

“Spectral transmittance characteristics of window material” graph.

KMPDA0103EB

S7986-01 S7987-01

■ Pin connections

S7986-01 S7987-01 Pin

no. Symbol Function Symbol Function

Remark

(standard operation)

1 RD Reset drain RD Reset drain +12 V

2 OS Output transistor source OS Output transistor source RL=2.2 kΩ

3 OD Output transistor drain OD Output transistor drain +15 V

4 OG Output gate OG Output gate +3 V

5 SG Summing gate SG Summing gate Same timing as P2H

6 - -

7 - -

8 P2H CCD horizontal register clock-2 P2H CCD horizontal register clock-2

9 P1H CCD horizontal register clock-1 P1H CCD horizontal register clock-1

10 IG2H Test point (horizontal input gate-2) IG2H Test point (horizontal input gate-2) -8 V

11 IG1H Test point (horizontal input gate-1) IG1H Test point (horizontal input gate-1) -8 V

12 ISH Test point (horizontal input source) ISH Test point (horizontal input source) Shorted to RD

13 TG Transfer gate TG Transfer gate Same timing as P2VS*15

14 P2VS CCD vertical register clock-2

(storage area) P2VS CCD vertical register clock-2

(storage area)

15 P1VS

CCD vertical register clock-1

(storage area) P1VS CCD vertical register clock-1

(storage area)

16 - Th1 Thermistor

17 - Th2 Thermistor

18 - P- TE-cooler-

19 - P+ TE-cooler+

20 SS Substrate (GND) SS Substrate (GND) GND

21 P2VI

CCD vertical register clock-2

(image area) P2VI CCD vertical register clock-2

(image area)

22 P1VI CCD vertical register clock-1

(image area) P1VI CCD vertical register clock-1

(image area)

23 - -

24 RG Reset gate RG Reset gate

*15: TG is an isolation gate between vertical register and horizontal resister.

In standard operation, the same pulse of P2VS should be applied to the TG.

CCD area image sensor

S7986-01, S7987-01

■ Specifications of built-in temperature sensor (S7987-01)

A chip thermistor is built in the same package with a CCD chip, and the

CCD chip temperature can be monitored with it. A relation between the

thermistor resistance and absolute temperature is expressed by the

following equation.

RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2)

T1: Resistance at absolute temperature T1 [K]

T2: Resistance at absolute temperature T2 [K]

T1/T2: B constant [K]

The characteristics of the thermistor used are as follows.

298=10 kΩ

298/323=3450 K

(Typ . Ta=25 ˚C)

10 kΩ

220 240 260

Temperature (K)

Resistance

280 300

100 kΩ

1 MΩ

KMPDB0111EA

Voltage (V)

CCD temperature (˚C)

-40

-30

432

Current (A)

-20

-10

(Typ . Ta=25 ˚C)

Voltage vs. current

CCD temperature vs. current

KMPDB0179EA

■ Specifications of built-in TE-cooler (Typ.)

Parameter Symbol Condition Value Unit

Internal resistance Rint Ta=25 °C 1.2

Ω

Maximum current*16 Imax Tc*17=Th*18=25 °C 3.0 A

Maximum voltage Vmax Tc*17=Th*18=25 °C 3.6 V

Maximum heat

absorption*19 Qmax 5.1 W

Maximum temperature

of hot side - 70 °C

*16: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that

this value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply current

should be less than 60 % of this maximum current.

*17: Temperature of cooling side of thermoelectric cooler

*18: Temperature of heat radiating side of thermoelectric cooler

*19: This is a heat absorption when the maximum current is supplied to the TE-cooler.

CCD area image sensor

S7986-01, S7987-01

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable . However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.

Type numbers of products listed inthe specification sheets or supplied as samples ma y have a suffix "(X)" which means tentative specifications or a suffix "(Z)"

■ Precaution for use (electrostatic countermeasures)

● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with

an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.

● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.

● Provide ground lines or ground connection with the work-floor, wor k-desk and work-bench to allow static electricity to discharge.

● Ground the tools used to handle these sensors, such as tweezers and soldering irons.

It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the

amount of damage that occurs.

■ Element cooling/heating temperature gradient rate

When using an external cooler, the element cooling/heating temperature gradient rate should be set at less than 5 K/min.

Cat. No. KMPD1035E07

Dec. 2009 DN