ST180C16C1LPBF - Vishay Presicion Group

Document Number: 94396 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 1

Phase Control Thyristors

(Hockey PUK Version), 350 A

ST180CPbF Series

Vishay High Power Products

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AB (A-PUK)

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

ELECTRICAL SPECIFICATIONS

PRODUCT SUMMARY

IT(AV) 350 A

TO-200AB (A-PUK)

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

IT(AV)

350 A

Ths 55 °C

IT(RMS)

660 A

Ths 25 °C

ITSM

50 Hz 5000

60 Hz 5230

I2t

50 Hz 125

kA2s

60 Hz 114

VDRM/VRRM 400 to 2000 V

tqTypical 100 µs

TJ- 40 to 125 °C

VOLTAGE RATINGS

TYPE NUMBER VOLTAGE

CODE

VDRM/VRRM, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

VRSM, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

IDRM/IRRM MAXIMUM

AT TJ = TJ MAXIMUM

ST180C..C

04 400 500

08 800 900

12 1200 1300

16 1600 1700

18 1800 1900

20 2000 2100

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2Revision: 11-Aug-08

ST180CPbF Series

Vishay High Power Products Phase Control Thyristors

(Hockey PUK Version), 350 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current

at heatsink temperature IT(AV)

180° conduction, half sine wave

double side (single side) cooled

350 (140) A

55 (85) °C

Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 660

Maximum peak, one-cycle

non-repetitive surge current ITSM

t = 10 ms No voltage

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

5000

t = 8.3 ms 5230

t = 10 ms 100 % VRRM

reapplied

4200

t = 8.3 ms 4400

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

125

kA2s

t = 8.3 ms 114

t = 10 ms 100 % VRRM

reapplied

t = 8.3 ms 81

Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1250 kA2√s

Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.08 V

High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.14

Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.18 mΩ

High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 1.14

Maximum on-state voltage VTM Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 V

Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA

Maximum (typical) latching current IL1000 (300)

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of

rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs

TJ = TJ maximum, anode voltage ≤ 80 % VDRM

1000 A/µs

Typical delay time td

Gate current 1 A, dIg/dt = 1 A/µs

Vd = 0.67 % VDRM, TJ = 25 °C 1.0

µs

Typical turn-off time tq

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,

VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of

off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs

Maximum peak reverse and

off-state leakage current

IRRM,

IDRM

TJ = TJ maximum, rated VDRM/VRRM applied 30 mA

Document Number: 94396 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 3

ST180CPbF Series

Phase Control Thyristors

(Hockey PUK Version), 350 A Vishay High Power Products

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

VALUES UNITS

TYP. MAX.

Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10 W

Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

Maximum peak positive gate current IGM

TJ = TJ maximum, tp ≤ 5 ms

3.0 A

Maximum peak positive gate voltage + VGM 20 V

Maximum peak negative gate voltage - VGM 5.0

DC gate current required to trigger IGT

TJ = - 40 °C

Maximum required gate trigger/

current/voltage are the lowest value

which will trigger all units 12 V

anode to cathode applied

180 -

mATJ = 25 °C 90 150

TJ = 125 °C 40 -

DC gate voltage required to trigger VGT

TJ = - 40 °C 2.9 -

TJ = 25 °C 1.8 3.0

TJ = 125 °C 1.2 -

DC gate current not to trigger IGD

TJ = TJ maximum

Maximum gate current/voltage not

to trigger is the maximum value

which will not trigger any unit with

rated VDRM anode to cathode

applied

10 mA

DC gate voltage not to trigger VGD 0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction

temperature range TJ- 40 to 125 °C

Maximum storage temperature range TStg - 40 to 150

Maximum thermal resistance,

junction to heatsink RthJ-hs

DC operation single side cooled 0.17

K/W

DC operation double side cooled 0.08

Maximum thermal resistance,

case to heatsink RthC-hs

DC operation single side cooled 0.033

DC operation double side cooled 0.017

Mounting force, ± 10 % 4900

(500)

(kg)

Approximate weight 50 g

Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)

ΔRthJC CONDUCTION

CONDUCTION ANGLE

SINUSOIDAL

CONDUCTION

RECTANGULAR

CONDUCTION TEST CONDITIONS UNITS

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.015 0.015 0.011 0.011

TJ = TJ maximum K/W

120° 0.018 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026

60° 0.035 0.035 0.036 0.037

30° 0.060 0.060 0.060 0.061

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4Revision: 11-Aug-08

ST180CPbF Series

Vishay High Power Products Phase Control Thyristors

(Hockey PUK Version), 350 A

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

Fig. 5 - On-State Power Loss Characteristics

Fig. 6 - On-State Power Loss Characteristics

110

100

130

Maximum Allowable

Heatsink Temperature (°C)

Average On-State Current (A)

120

100 150 200 250

ST180C..C Series

(Single side cooled)

RthJ-hs (DC) = 0.17 K/W

Conduction angle

60°

30°

90° 120°

180°

0200 400

Maximum Allowable

Heatsink Temperature (°C)

Average On-State Current (A)

300100

110

100

130

120

ST180C..C Series

(Single side cooled)

RthJ-hs (DC) = 0.17 K/W

30°

60°

90°

120°

180°

Conduction period

Maximum Allowable

Heatsink Temperature (°C)

Average On-State Current (A)

50 100 150 200 250 300 350 400 450

Conduction angle

60°

30°

90° 120°

180°

ST180C..C Series

(Double side cooled)

RthJ-hs (DC) = 0.17 K/W

110

100

130

120

0200 400 500 600 700

Maximum Allowable

Heatsink Temperature (°C)

Average On-State Current (A)

300100

110

100

130

120

ST180C..C Series

(Double side cooled)

RthJ-hs (DC) = 0.08 K/W

30°

60°

90°

120°

180°

Conduction period

700

600

100

200

300

400

500

900

1000

Maximum Average

On-State Power Loss (W)

Average On-State Current (A)

800

100 150 200 250 300 350 400 450

180°

120°

90°

60°

30° RMS limit

Conduction angle

ST180C..C Series

TJ = 125 °C

700

600

100

200

300

400

500

900

1000

1100

1200

1300

Maximum Average

On-State Power Loss (W)

Average On-State Current (A)

800

100 200 300 400 500 600 700

180°

120°

90°

60°

30° RMS limit

ST180C..C Series

TJ = 125 °C

Conduction period

Document Number: 94396 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 5

ST180CPbF Series

Phase Control Thyristors

(Hockey PUK Version), 350 A Vishay High Power Products

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 9 - On-State Voltage Drop Characteristics

Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

2000

1 10 100

2500

3500

4000

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Peak Half Sine Wave

On-State Current (A)

4500

3000

At any rated load condition and with

rated VRRM applied following surge

ST180C..C Series

Initial TJ = 125 °C

at 60 Hz 0.0083 s

at 50 Hz 0.0100 s

0.01 0.1 1

Pulse Train Duration (s)

Peak Half Sine Wave

On-State Current (A)

2000

2500

3500

4000

4500

5000

3000

No Voltage Reapplied

Rated VRRM Reapplied

Maximum non repetitive surge current

versus pulse train duration. Control of

conduction may not be maintained.

Initial TJ = 125 °C

ST180C..C Series

100

123456

1000

10 000

Instantaneous On-State Current (A)

Instantaneous On-State Voltage (V)

TJ = 25 °C

TJ = 125 °C

ST180C..C Series

0.001

0.01

0.1

0.001

Square Wave Pulse Duration (s)

ZthJ-hs - Transient

Thermal Impedance (K/W)

0.01 0.1 1 10

Steady state value

RthJ-hs = 0.17 K/W

(Single side cooled)

RthJ-hs = 0.08 K/W

(Double side cooled)

(DC operation)

ST180C..C Series

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6Revision: 11-Aug-08

ST180CPbF Series

Vishay High Power Products Phase Control Thyristors

(Hockey PUK Version), 350 A

Fig. 11 - Gate Characteristics

ORDERING INFORMATION TABLE

0.1

100

0.001

Instantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

0.01 0.1 1 10 100

TJ = 25 °C

TJ = 40 °C

TJ = 125 °C

(b)

(1) (2) (3) (4)

(1) PGM = 10 W, tp = 4 ms

(2) PGM = 20 W, tp = 2 ms

(3) PGM = 40 W, tp = 1 ms

(4) PGM = 60 W, tp = 0.66 ms

Frequency limited by PG(AV)

VGD

IGD

Rectangular gate pulse

a) Recommended load line for

rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs

b) Recommended load line for

≤ 30 % rated dI/dt: 10 V, 10 Ω

r ≤ 1 µs

Device: ST180C..C Series

(a)

- Thyristor

- Essential part number

- 0 = Converter grade

- Lead (Pb)-free

- C = Ceramic PUK

- Critical dV/dt:

- Voltage code x 100 = VRRM (see Voltage Ratings table)

- C = PUK case TO-200AB (A-PUK)

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

Device code

51 324

6789

ST 18 0 C 20 C 1 - PbF

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95074

Document Number: 95074 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 01-Aug-07 1

TO-200AB (A-PUK)

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

4.75 (0.19)

28 (1.10)

6.5 (0.26)

19 (0.75)

DIA. MAX. 0.3 (0.01) MIN.

0.3 (0.01) MIN.

13.7/14.4

(0.54/0.57)

25° ± 5°

Gate terminal for

1.47 (0.06) DIA.

pin receptacle

19 (0.75)

DIA. MAX.

38 (1.50) DIA MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

42 (1.65) MAX.

Anode to gate

Creepage distance: 7.62 (0.30) minimum

Strike distance: 7.12 (0.28) minimum

Quote between upper and lower pole pieces has to be considered after

application of mounting force (see thermal and mechanical specification)

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Revision: 12-Mar-12 1Document Number: 91000

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