1
Motorola Thyristor Device Data
  
Reverse Blocking Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits.
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
Blocking Voltage to 800 Volts
80 A Surge Current Capability
Insulated Package Simplifies Mounting
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = –40 to +125°C, Gate Open) MCR218-2FP
MCR218-4FP
MCR218-6FP
MCR218-8FP
MCR218-10FP
VDRM
VRRM 50
200
400
600
800
Volts
On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2) IT(RMS) 8 Amps
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)
Preceded and followed by rated current ITSM 80 Amps
Circuit Fusing (t = 8.3 ms) I2t 26 A2s
Peak Gate Power (TC = +70°C, Pulse Width = 10 µs) PGM 5 Watts
Average Gate Power (TC = +70°C, t = 8.3 ms) PG(AV) 0.5 Watt
Peak Gate Current (TC = +70°C, Pulse Width = 10 µs) IGM 2 Amps
RMS Isolation Voltage (TA = 25°C, Relative Humidity
p
20%) V(ISO) 1500 Volts
Operating Junction Temperature TJ–40 to +125 °C
Storage Temperature Range Tstg –40 to +125 °C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. The case t emperature r eference point f or all TC m easurements is a point o n the c enter l ead o f the p ackage as close a s possible to t he plastic body.
Order this document
by MCR218FP/D
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SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
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CASE 221C-02
STYLE 2
ISOLATED SCRs
8 AMPERES RMS
50 thru 800 VOLTS
K
G
A
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2 Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2°C/W
Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Forward Blocking Current
(VD = Rated VDRM, Gate Open) TJ = 25°C
TJ = 125°C
IDRM
10
2µA
mA
Peak Reverse Blocking Current
(VR = Rated VRRM, TJ = 125°C) IRRM 2 mA
Forward “On” Voltage(1)
(ITM = 16 A Peak) VTM 1 1.8 Volts
Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms) IGT 10 25 mA
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms) VGT 1.5 Volts
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C) VGD 0.2 Volts
Holding Current
(Anode Voltage = 12 Vdc) IH 16 30 mA
Turn-On Time
(ITM = 8 A, IGT = 40 mAdc) tgt 1.5 µs
Turn-Off Time (VD = Rated VDRM,
ITM = 8 A, IR = 8 A) TJ = 25°C
TJ = 125°C
tq
15
35
µs
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform) dv/dt 100 V/µs
1. Pulse Test: Pulse Width = 1 ms, Duty Cycle
p
2%.
87654321
12
9
6
3
IT(AV), AVG. ON-STATE CURRENT (AMPS)
0
0
60
°
90
°
120
°
180
°
dc
75
85
95
105
115
876543210
125
α
= CONDUCTION ANGLE
90
°
60
°
120
°
dc
α
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
α
= CONDUCTION ANGLE
Figure 1. Current Derating Figure 2. On-State Power Dissipation
15
α
P , AVERAGE ON-STATE POWER DISSIPATION
(AV) (WATTS)
T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
C
°
α
= 30
°
TYPICAL CHARACTERISTICS
180
°
α
= 30
°
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3
Motorola Thyristor Device Data
IT
1
0.02
0.03
0.05
0.07
0.1
100
0.2
0.3
0.5
0.7
0.2 0.3 0.5 1 2
1.2
0.1
Z
θ
JC(t) = R
θ
JC
r(t)
1 CYCLE
1
60 SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
TC = 85
°
C
f = 60 Hz
NUMBER OF CYCLES
65
70
75
80
20
2 3 4 6 8 10
–I
+V
+I
–V IDRM VDRM
IRRM
VT
IH
VRRM FORWARD
BLOCKING
REGION
FORWARD
BREAKOVER
POINT
REVERSE
BLOCKING
REGION
REVERSE
AVALANCHE
REGION
0.10.4
0.01
t, TIME (ms)
3 5
55
0.2
0.3
0.5
0.7
7
5
1
2
10
50
3
20
30
70
vF, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
2.8 4.43.6 5.2 62
30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k 10 k1.0 k
Figure
I , PEAK SURGE CURRENT (AMP)
TSM
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED) F
i , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMP)
Figure 3. Maximum On-State Characteristics Figure 5. Characteristics and Symbols
Figure 4. Maximum Non-Repetitive Surge Current
Figure 6. Thermal Response
TJ = 25
°
C
125
°
C
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4 Motorola Thyristor Device Data
2
–60
Figure 9. Holding Current versus Temperature
TJ, JUNCTION TEMPERATURE (
°
C)
VD = 12 V
–60
Figure 7. Gate Trigger Current versus Temperature
VD = 12 V
Figure 8. Gate Trigger Voltage versus Temperature
–60
VD = 12 V
14012040 10080600 20–20
2
0.4
0.8
1.2
1.6
0–40 14012040 10080600 20–20
2
0.4
0.4
0
1.6
1.2
0.8
1.2
1.6
–40
14012040
0
0.8
1008060–40 0 20–20
TJ, JUNCTION TEMPERATURE (
°
C)
TJ, JUNCTION TEMPERATURE (
°
C)
I , GATE TRIGGER CURRENT (NORMALIZED)
GT
V , GATE TRIGGER VOLTAGE (NORMALIZED)
GT
I , HOLDING CURRENT (NORMALIZED)
H
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5
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221C-02
1 2 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
–Y–
–B– –T–
Q
P
A
K
H
Z
GL
F
D3 PL
M
B
M
0.25 (0.010) Y
E
NS
J
R
C
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.680 0.700 17.28 17.78
B0.388 0.408 9.86 10.36
C0.175 0.195 4.45 4.95
D0.025 0.040 0.64 1.01
E0.340 0.355 8.64 9.01
F0.140 0.150 3.56 3.81
G0.100 BSC 2.54 BSC
H0.110 0.155 2.80 3.93
J0.018 0.028 0.46 0.71
K0.500 0.550 12.70 13.97
L0.045 0.070 1.15 1.77
N0.049 ––– 1.25 –––
P0.270 0.290 6.86 7.36
Q0.480 0.500 12.20 12.70
R0.090 0.120 2.29 3.04
S0.105 0.115 2.67 2.92
Z0.070 0.090 1.78 2.28
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
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6 Motorola Thyristor Device Data
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MCR218FP/D
*MCR218FP/D*