Series PTC 2O10, PTC 2011 NPN Silicon Power Darlington Transistors 30 Amperes 1000 Volts FEATURES @ Isolated Collectors High Voltage Rating 1000 Volts Glass Passivated Die to Provide Excellent High Temperature Stability ob APPLICATIONS - op @ High Current Switching Power Supplies @ Inverters/Regulators @ Pulse-Width-Modulated (PWM) System Control Circuitry SPECIFICATIONS General Electrical The PTC 2010 and PTC 2011 Powerlith II series of a: . : Cl silicon power transistor modules consists of dual darlingtons with free wheeling diodes mounted in the Powerlith II package. The darlingtons are mounted in series internally, with the collector terminals isolated from the package. These modules are ideally suited for applications in switching power supplies, pulse-width- modulated regulators and inverter or converter circuits operating off 480 volt lines. Package outline (Non-JEDEC) MILLIMETERS INCHES Powerlith II DIM MIN MAX MIN MAX A 91 93 3.58 3.66 Terminal B 79 81 3.11 3.19 erminai 8.32 UNC Cc 67 69 2.64 2.71 54mm D 12 14 0.47 0.55 Din E 5 7 0.20 0.27 F 5 7 0.20 0.27 H G 7 9 0.27 0.35 H 9 11 0.35 0.43 I 11 13 0.43 0.51 H J 15 17 0.59 0.67 K 31 33 1.22 1.30 L 7 9 0.27 0.35 M 2 4 0.08 0.16 N 9 11 0.35 * 0.43 Oo 12 14 0.47 0.55 P 15 25 0.06 0.10 R L5 2.5 0.06 0.10 Ss 24.5 26.5 0.96 1.04 T 26 28 1.02 1.10 U 31 33 1.22 1.30 Vv 6 8 0.24 0.31 Ww 2 4 0.08 0.16 x 9 10 0.35 0.43 316 SERIES PTC 2010/2011 Fast Switching, High Voltage Dual Power Darlington Module Absolute maximum ratings Description PTC 2010 PTC 2011 Unit Conditions VCBO Collector-Base Voltage 1000 1000 Volts VCEO(sus) Collector-Emitter Voltage 850 800 Volts Ic Collector Current Continuous 30 A Ic Collector Current Peak 60 A IB Base Current Continuous 10 A Ip Base Current Peak 15 A PD Maximum Power Dissipation 300* Ww Tc = 25C Ts, Tstg Junction Operating and _ee Storage Temperature Range Sto +150 c . . 2 ge . yo Electrical characteristics at 25C (unless otherwise specified) Description Type Min. Typ. Max. Unit Conditions VCEO(sus) Collector-Emitter PTC 2010 850 Vv _ _ Sustaining Voltage PTC 2011 800 Vv IC=2A L=2mH ICEO Collector-Cutoff Current All 1.0 mA Atrated collector voltage IEBO Emitter-Cutoff Current All 350 mA VEB = 6V FBSOA Forward Bias 48 . Safe OperatingArea All 20 A VCE = 15V, Non Rep. tp = 1s hFE DC CurrentGain J All 75 100 300 Ic =30A VCE=5V VCE(SAT) Collector-Emitter [JJ _ _ Saturation Voltage All 17 25 Vv IC =30A Ip=.6A VBE(SAT) Base -Emitter {jj _ _ Saturation Voltage All 2.2 3.0 Vv Ic =30A Ip=.6A . . ge <4: oro Switching characteristics resistive load at 25C Description Type Min. Typ. Max. Unit Conditions td Delay Time All 0.4 BS tr Rise Time All 3.0 us IC =30A VBE =60V Vcc = 600V_ Ipl=.6A tstg Storage Time All 10 BS Ip2 = -3A PW =50ns tf Fall Time Ail 5 BS Thermal and mechanical characteristics Description Type Min. | Typ. | Max. Unit Conditions ReJc Thermal Resistance Al 0.42 C/W Junction to Case : . Isolation Between Terminals and Package Type All Powerlith il Mounting Surface 2,000V Darlington Circuit All Dual Darlington Figure 1, Preceding Page . * 4s om Free wheeling diode characteristics at 25C Description Type Min. Typ. Max. Unit Conditions VF Forward Voltage All 12 2.0 Vv Ic =30A try Reverse Recovery Time Ail 0.7 10 BS IF = 30A_ difdt = 50A/us PTC 2010 1000 Vv PIV Peak Inverse Voltage PTC 2011 1000 Vv ul PULSE TEST: PW = 300 us, DUTY CYCLE < 2% *Per Darlington 317