SDA-4000 SDA-4000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 3.1mmx1.45mmx0.102mm Product Description Features RFMD's SDA-4000 is a directly coupled (DC) GaAs microwave monolithic integrated circuit (MMIC) driver amplifier die. It is designed for use as an electro-absorptive modulated laser (EML) driver employing single-ended (SE) architectures with V (Vpi) ranging from 2V to 5V, and as a clock driver for return-to-zero (RZ) and carrier select (CS) carver modulators. It can also be used for broadband automated test equipment (ATE), instrumentation, military, and aerospace applications. Optimum Technology Matching(R) Applied GaAs HBT VTO 3 GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS DC to 32GHz Operation 22dBm P3dB Gain=15dB Typical Noise Figure3.0dB Output Voltage to 5VPP Single Supply Voltage 160mA Total Current Applications 4 OUT VG2 2 IN 1 SiGe HBT 5 VCAS Si CMOS Si BJT 7 6 NC GaAs pHEMT VTI GaN HEMT InP HBT Driver for Single-ended (SE) EML Clock Driver for RZ and CS Pulse Carver Broadband ATE Instrumentation Military Aerospace RF MEMS LDMOS Parameter Min. Specification Typ. Max. Unit Electrical Specifications Operating Frequency Gain Output Voltage IP3 @ Mid-Band P1dB @ Mid- Band P3dB @ Mid-Band 0 13.5 32 Condition TA=+25C, VDD =+5VDC, VG2@=+2VDC, IDD =160mA* 3dB BW 16GHz 14.5 5 27 GHz dB VP-P dBm 18 22 dBm dBm 16GHz 16GHz dB dB dB mA VDC 16GHz DC to 25GHz DC to 25GHz Noise Figure at Mid-Band 3.2 Input Return Loss 15 Output Return Loss 20 Supply Current 160 Supply Voltage 5 *Adjust VTI between -1.5VDC to +0.2VDC to achieve IDD =160mA typical., VG2 =2VDC POUT +0dBm/tone, 16GHz RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS091021 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 SDA-4000 Absolute Maximum Ratings Parameter Rating Unit Voltage (VDD) +6.0 VDC Gate Bias Voltage (VTI) -1.5 to +0.2 VDC Gate Bias Voltage (VG2) (VDD -5.0) VDC to VDD V +15 dBm +125 C Continuous Power Dissipation (T=+85C) 1 W Thermal Resistance (Pad to Die Bottom) 84 C/W RF Input Power (VDD =+5.0VDC) Operating Junction Temperature (TJ) Storage Temperature Operating Temperature ESD JESD22-A114 Human Body Model (HBM) -40 to +150 C 0 to +85 C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Class 0 (All Pads) Typical Electrical Performance S11 versus Frequency S21 versus Frequency 20 0 18 -5 16 -10 S11 (dB) 14 S21 (dB) -15 -20 12 10 8 6 -25 4 -40C -30 25C -40C 25C 2 85C 85C 0 -35 0 5 10 15 20 25 30 35 0 40 5 10 20 25 30 0 0 -10 -5 -20 -10 -30 S22 dB -40 -50 40 -15 -20 -25 -60 -30 -40C -40C -70 25C -35 25C 85C 85C -40 -80 0 5 10 15 20 25 Frequency (GHz) 2 of 8 35 S22 versus Frequency S12 versus Frequency S12 (dB) 15 Frequency (GHz) Frequency (GHz) 30 35 40 0 5 10 15 20 25 30 35 40 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS091021 SDA-4000 Typical Electrical Performance OIP3 versus Frequency at Po=0 dBm/tone (1MHz tone spacing) P1dB versus Frequency 35 25 30 20 25 15 OIP3 (dB) P1dB (dBm) 20 15 10 10 25C 5 25C 5 -40C -40C 85C 85C 0 0 0 5 10 15 20 25 30 35 0 40 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Frequency (GHz) P3dB versus Frequency NF versus Frequency 16 25 14 20 12 15 NF (dB) P1dB (dBm) 10 10 8 6 4 25C 5 25C -40C -40C 2 85C 85C 0 0 0 5 10 15 20 25 Frequency (GHz) DS091021 30 35 40 0 5 10 15 20 25 30 35 40 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 8 SDA-4000 Outline Drawing Notes: 1. All dimensions in microns 2. No connection required for unlabeled bond pads 3. Die thickness is 0.102mm (4mil) 4. Typical bond pad is 0.100mm square 5. Backside metalization: Gold 6: Backside metal is ground 7: Bond pad metalization: Gold 4 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS091021 SDA-4000 Pin 1 Function RFIN 2 VG2 Description Interface Schematic RF Input. This pad is DC coupled and matched to 50 from DC to 32GHz. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for RF input and output. RFIN VG2 is an optional pad. It may be used to bias the cascode gate of the amplifier. If this port is used, a 1000pF bypass capacitor with the shortest wirebond length possible is recommended to prevent low frequency gain ripple. 3 VTO The output drain termination pad. This pad requires a suggested 1000pF bypass capacitor with the shortest wirebond length to prevent low frequency gain ripple. The value of the external capacitance limits the low frequency response of the amplifier. 4 RFOUT and VDD RF Output. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for RF input and output. Connect the DC bias (VDD) network to provide drain current (IDD). 1000 pF Term Resistor 10 pF RFOUT 1000 pF VDD RFOUT Note: Drain Bias (VDD) must be applied through a broadband bias tee or external bias network 5 VCAS 6 7 VG21 VTI Die GND DS091021 Provides VG2 gate voltage to the cascode amplifier. The value is ~ (VCC/2 - absolute value of VTI). 1000 pF Not connected. Input gate voltage, used to bias the amplifier. The value is between -1.5VDC (device is pinched OFF) to +0.2VDC (fully ON). This pad requires a bypass capacitor to ground with the shortest possible wirebond length to prevent low frequency gain ripple. The value of the external capacitance limits the low frequency response of the amplifier. Ground connection. Connect die bottom directly to ground plane for best performance. Note: The die should be connected directly to the ground plane with conductive epoxy. 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1000 pF 5 of 8 SDA-4000 Assembly Diagram 1000pF Capacitor To GND 1000pF Capacitor To GND 3mil Nominal Gap 3 4 2 1000pF Capacitor To GND RF & DC Bonds 1mil Gold Wire 1 7 6 50-Ohm Transmission Line 5 To VG2 Power Supply 1000pF Capacitor To GND To VTI Power Supply Application Circuit Schematic 1000pF VG2 2 Vdd 3 1000pF RFIN 1 7 6 5 4 RFOUT 1000pF See note 1000pF Note: 6 of 8 Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS091021 SDA-4000 Measurement Technique All specifications and typical performances reported in this document were measured in the following manner. Data was taken using a temperature controlled probe station utilizing 150m pitch GSG probes. The interface between the probes and integrated circuit was made with a coplanar to microstrip ceramic test interface. The test interface was then wire bonded to the die as shown in the figure below using 1mil diameter bondwires. The spacing between the test interface and the die was 200m, and the bond wire loop height was 100m. The thickness of the test interface is 125m. (5mil). The calibration of the test fixture included the probes and test interfaces, so that the measurement reference plane was at the point of bond wire attachment. Therefore, all data represents the integrated circuit and accompanying bond wires. Ordering Information DS091021 Part Number Description Delivery Method Die/GelPak SDA4000 GaAs distributed amplifier, 32GHz, 3.10mmx1.45mm die GelPak 10 pcs or more SDA4000SB GaAs distributed amplifier, 32GHz, 3.10mmx1.45mm die GelPak 2 pcs 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 8 SDA-4000 8 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS091021