〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
. 1/22
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
TSZ22111 • 14 • 001
www.rohm.com
BM1R00001 1 1.3
BM1R00002 1 2
BM1R00003 1 3
BM1R00004 1 3.6
BM1R00005 1 4.6
BM1R00006 1.5 1.3
BM1R00007 1.5 2
BM1R00008 1.5 3
BM1R00009 1.5 3.6
BM1R00010 1.5 4.6
BM1R00011 2.3 1.3
BM1R00012 2.3 2
BM1R00013 2.3 3
BM1R00014 2.3 3.6
BM1R00015 2.3 4.6
BM1R00016 2.8 1.3
BM1R00017 2.8 2
BM1R00018 2.8 3
BM1R00019 2.8 3.6
BM1R00020 2.8 4.6
BM1R00021 3.5 1.3
BM1R00022 3.5 2
BM1R00023 3.5 3
BM1R00024 3.5 3.6
BM1R00025 3.5 4.6
BM1R00026 NONE 1.3
BM1R00027 NONE 2
BM1R00028 NONE 3
BM1R00029 NONE 3.6
BM1R00030 NONE 4.6
Function Name
Compulsion
ON Time
( μs)
Compulsion
OFF Time
( μs)
BM1R00121 1 1.3
BM1R00122 1 2
BM1R00123 1 3
BM1R00124 1 3.6
BM1R00125 1 4.6
BM1R00126 1.5 1.3
BM1R00127 1.5 2
BM1R00128 1.5 3
BM1R00129 1.5 3.6
BM1R00130 1.5 4.6
BM1R00131 2.3 1.3
BM1R00132 2.3 2
BM1R00133 2.3 3
BM1R00134 2.3 3.6
BM1R00135 2.3 4.6
BM1R00136 2.8 1.3
BM1R00137 2.8 2
BM1R00138 2.8 3
BM1R00139 2.8 3.6
BM1R00140 2.8 4.6
BM1R00141 3.5 1.3
BM1R00142 3.5 2
BM1R00143 3.5 3
BM1R00144 3.5 3.6
BM1R00145 3.5 4.6
BM1R00146 NONE 1.3
BM1R00147 NONE 2
BM1R00148 NONE 3
BM1R00149 NONE 3.6
BM1R00150 NONE 4.6
Function Name
Compulsion
ON Time
( μs)
Compulsion
OFF Time
( μs)
Low Consumption and High Accuracy Shunt Regulator Built-in
High Efficiency and Low Standby Power,
CCM corresponding
Secondary Side Synchronous Rectification
Controller IC
BM1R00xxxF
General Description
BM1R00xxxF is a synchronous rectification controller
to be used in the secondary-side output. It has a
built-in ultra-low consumption and high accuracy shunt
regulator, which significantly reduces standby power.
The shunt regulator is constructed in a completely
independent chip that enables it to operate as a GND
reference even when used in high side.
At continuous mode operation, further space saving
can be realized when operating without the input
switching synchronizing signal of the primary side.
BM1R00xxxF also features a wide operating power
supply voltage range of 2.7V to 32V for various output
applications.
Finally, by adopting the high-voltage 120V process, it
is possible to monitor the drain voltage directly.
Features
Built-in Ultra-Low Consumption Shunt Regulator
Reducing Standby Power Consumption
Synchronous Rectification FET Supports
High and Low Side
120V High Voltage Process DRAIN terminal
Wide Input Operating Voltage Range of
2.7V to 32V
Supports LLC and PWM QR Controller
No Input Required on the Primary-Side at CCM
Built-in Overvoltage Protection for SH_IN and
SH_OUT Terminal
Built-in Thermal Shutdown Function
Built-in Auto Shutdown Function
SOP8 package
Applications
AC-DC Output Power Conversion Applications:
Charger, Adapter, TV, Rice Cooker, Humidifier,
Air Conditioning, Vacuum Cleaner, etc.
Key Specifications
Input Voltage Range: 2.7V to 32V
Circuit Current (No Switching): 800µA(Typ)
Circuit Current (Auto Shutdown) : 120µA (Typ)
DRAIN Terminal Absolute Voltage: 120V
Operating Temperature Range: -40°C to +105°C
Package W(Typ) x D(Typ) x H(Max)
5.00mm x 6.20mm x 1.71mm
Lineup Table
Latch Protection Series
Auto Restart Protection Series
SOP8
Datashee
t
DatasheetDatasheet
Notice – WE Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
2/22
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
BM1R00xxxF
SH_IN
SH_OUT
SH_GND
GATE
865
1234
DRAIN
VCC
7
SR_GND
MAX_TON
Typical Application Circuits
Pin Configuration
Pin Description
Pin No.
Pin Name
Function
1
VCC
Power supply
2
SH_IN
Shunt regulator reference
3
SH_OUT
Shunt regulator output
4
SH_GND
Shunt regulator ground
5
MAX_TON
Set maximum on time
6
GATE
Gate drive
7
SR_GND
Synchronous rectification ground
8
DRAIN
DRAIN monitor
Low Side Application (FLYBACK)
High Side Application (FLYBACK)
(TOP VIEW)
+
-
VOUT
Primary
Controler
GND
SH_IN
GATE
SH_GND
DRAIN
865
12 3 4
VCC
SH_OUT
7
SR_GND
MAX_TON
+
-
VOUT
Primary
Controler
GND
SH_IN
GATE
SH_GND
DRAIN
865
12 3 4
VCC
SH_OUT
7
SR_GND
MAX_TON
3/22
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
BM1R00xxxF
Block Diagram
VOUT
Primary
Side
Controller
+
-
+
-
-100mV
S Q
R
+
-
VCCx1.4
Compulsion
ON TIME
-6mV
MAX_TON
BLOCK
MAX_TON
VCC
Driver
GND
LDO BLOCK
+
-
SH_IN
+
-
0.8V
SH_OUT
PROTECTION BLOCK
・SH_OUT_OVP
・SH_IN_OVP
・TSD
DRAIN
GATE
SR_GND
DRAIN_COMP
SET_COMP
RESET_COMP
SHUNT_REGULATOR
AUTO
SHUTDOWN
BLOCK
Compulsion
OFF TIME
Timer
LATCH
2kohm
SH_GND
BM1R00001-030: Include Timer LATCH
BM1R00121-150: Without Timer LATCH
4/22
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
BM1R00xxxF
Description of Block
1. SET_COMP Block
Monitors the DRAIN terminal voltage, and outputs a signal to turn ON the FET if the DRAIN terminal voltage is less
than or equal to -100mV (Typ).
2. RESET_COMP Block
Monitors the DRAIN terminal voltage and outputs a signal to turn OFF the FET if the DRAIN terminal voltage is more
than or equal to -6mV (Typ).
3. Compulsion ON TIME Block
When the FET is turned ON due to SET_COMP detection, noise occurs on the DRAIN terminal. To prevent the noise
from turning OFF the FET, an ON state should be forced for a certain time. Compulsion ON time is within a range of
0µs (None) to 3.5µs, which is different for each series number (refer to page.1 table).
4. Compulsion OFF TIME Block
When the FET is turned OFF due to RESET_COMP detection, resonance waveforms appear on the DRAIN terminal.
To prevent the noise from turning ON the FET, an OFF state should be forced for a certain time. Compulsion OFF time
is within a range of 1.3µs to 4.6µs, which is different for each series number (refer to page.1 table).
Operation sequence of each block is shown on the figure below.
About Maximum Input Frequency
The Maximum Operating Frequency of the IC depends on the Compulsion ON/OFF Time. For example, BM1R00026F and
BM1R00146F Compulsion ON and OFF Time is both equal to 0μs. Considering a variation of 9%, the maximum input
frequency is given by the following:
fMAX = 1 / ((0μs + 1.3μs) x 1.09) = 706kHz
However, since the frequency varies greatly due to the input voltage and load, it will be necessary to select the series in
accordance with each application.
0V
二次側
DRAIN
SET COMP
ON
ON
VGATE
0V
0V
RESET COMP RESET
0V
ON
-100mV
RESET
-6mV -6mV
VOUT
Compulsion
ON Time 0V ON
TIME
0V OFF
TIME
ON
TIME
OFF
TIME
-100mV -100mV
-6mV -6mV
Compulsion
OFF Time
ON
-100mV
Figure 1. Operation sequence
5/22
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
BM1R00xxxF
0V -100mV -100mV
MAX_TON
TIMER
Compulsion OFF
Timer Start
Compulsion OFF
Timer Start
-Vf
Description of Block – continued
5. MAX_TON Block
MAX_TON block sets the maximum ON time. DRAIN terminal voltage starts counting when the rising edge of the
output voltage exceeds VCC × 1.4V (Typ). In addition, the recounting starts when it detects another rising edge. The
synchronous rectification FET will be forced OFF after the set time has elapsed. The time can be adjusted by varying
the resistance value of the resistor connected to the MAX_TON terminal.
The relationship between the resistance value (RMAX_TON) and set time (TMAX_TON) is described as follows:
Calculation Example:
If you want to set the maximum ON time to 10µs, the value of RMAX_TON is as follows:
However, the formula above is for an ideal approximation only; it is still strongly advised that the operation of the actual
application should still be verified.
By setting this time, it becomes possible to prevent the simultaneous ON operation of the primary side and the
secondary side in continuous mode.
The drive sequence in continuous mode operation is shown in the figure below:
a capacitor C1 and a Moreover, in order to reduce as much as possible the influence of the switching noise, resistor R1
in series should be connected to the MAX_TON terminal. The capacitance should approximately be 1000pF, and the
resistance value is recommended to be around 1kΩ.This also serves as phase compensation of MAX_TON terminal
and therefore should be connected.
This function may be disabled by pulling up the MAX_TON terminal to VCC pin in quasi-resonant and current
resonance applications which do not operate on continuous mode. The 1000pF and 1kΩ resistor is also unnecessary.
6. AUTO SHUTDOWN Block
The Auto Shutdown block automatically turns the synchronous rectification ON/OFF depending on the presence or
absence of the DRAIN terminal pulse. Shutdown occurs if the input pulses on the DRAIN terminal has more than 200us
between pulses. This stops the synchronous rectification operation. The IC will restart the synchronous rectification
after it detects 256 occurrences of input pulses on the DRAIN terminal.
7. SHUNT REGULATOR Chip
A high-accuracy shunt regulator with ultra-low consumption is used for controlling the output voltage of the AC/DC.
Since the synchronous rectification and the shunt regulator are built in a completely different chip, GND separation is
possible. Therefore, it becomes possible to place the shunt regulator on the secondary-side GND reference in the
synchronous rectification applications in case of disposing the High Side FET. It can also be used as protection for the
comparator, the secondary side OVP, FET overheat protection, etc.
8. PROTECTION Block
When an abnormal condition is detected after the timer count is completed, the photo coupler from SH_OUT terminal is
driven to stop the switching operation on the primary side.
(1) Primary side FET = ON. Current I1 flows to the primary side FET. Secondary side drain voltage VDS2 rises.
(2) The VDS2 = VCC × 1.4 detects the rise edge of the threshold, MAX_TON timer start.
(3) Primary side FET = OFF. Current I2 flows through the Body Diode of the secondary side FET (OFF state).
(4) Secondary side drain voltage VDS2＜－100mV by I2 Current, Secondary side FET=ON.
(5) Elapsed the set time in MAX_TON terminals, the secondary-side FET = compulsory OFF.
(6) Since the I2 current flows through the Body Diode, Vf voltage occurs.
kskµs 100/1010
skµstkR TONMAXTONMAX
/10
__
(1)
(2)
(3)
(4)
(6)
(5)
(1)
Period allotted for G1 and G2
to avoid concurrent ON state
at continuous mode
operation.
VDS2
I1
I2
VG1
VG2
tMAX_ON
tMAX_ON
VCC x 1.4
VOUT
Primary
Side
Controller
+
-
+
-
-100mV
S Q
R
+
-
VCCx1.4
Compulsion
ON TIME
-6mV
MAX_TON
BLOCK
MAX_TON
VCC
Driver
GND
LDO BLOCK
+
-
DRAIN
GATE
SR_GND
DRAIN_COMP
SET_COMP
RESET_COMP
Compulsion
OFF TIME
VG1
I1
I2
VDS2
VG2
Np Ns
VH
RMAX_TON
R1C1
Vf
D1
RDRAIN1
RDRAIN2
LFB
Figure 2. The drive sequence in continuous mode operation
6/22
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
BM1R00xxxF
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol
Rating
Unit
VCC Input Voltage
VMAX_VCC
-0.3 to +40(Note 1)
V
MAX_TON Input Voltage
VMAX_MAX_TON
-0.3 to +40(Note 1)
V
SH_IN Input Voltage
VMAX_SH_IN
-0.3 to +40(Note 2)
V
SH_OUT Input Voltage
VMAX_SH_OUT
-0.3 to +40(Note 2)
V
Gate Input Voltage
VMAX_GATE
-0.3 to 15.5(Note 1)
V
Drain Input Voltage
VMAX_DRAIN
120(Note 1)(Note 3)
V
Maximum Junction Temperature
Tjmax
+150
°C
Operating Temperature Range
Topr
-40 to +105
°C
Storage Temperature
Tstr
-55 to +150
°C
(Note 1) Reference SR_GND
(Note 2) Reference SH_GND
(Note 3) When a negative voltage is applied, current flows through the ESD protection device.
This current value is about 6mA or less and will require a current limiting resistor to the DRAIN terminal
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse in case the IC is operated over
the absolute maximum ratings.
Thermal Resistance (Note 1)
Parameter
Symbol
Thermal Resistance (Typ)
Unit
1s (Note 3)
2s2p (Note 4)
SOP8
Junction to Ambient
θJA
197.4
109.8
°C/W
Junction to Top Characterization Parameter (Note 2)
ΨJT
21
19
°C/W
(Note 1) Based on JESD51-2A(Still-Air)
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-7.
Layer Number of
Measurement Board
Material
Board Size
Single
FR-4
114.3mm x 76.2mm x 1.57mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70µm
Layer Number of
Measurement Board
Material
Board Size
4 Layers
FR-4
114.3mm x 76.2mm x 1.6mmt
Top
2 Internal Layers
Bottom
Copper Pattern
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70µm
74.2mm x 74.2mm
35µm
74.2mm x 74.2mm
70µm
Recommended Operating Conditions (Ta = 25°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
2.7
20
32
V
MAX_TON Resistor Range
RMAX_TON
56
-
300
kΩ
MAX_TON R1
R1
0.5
1
2
kΩ
MAX_TON C1
C1
680
1000
2200
pF
7/22
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
BM1R00xxxF
Electrical Characteristics (Unless otherwise specified VCC=20V Ta=25°C)
Parameter
Symbol
Spec
Unit
Conditions
MIN
TYP
MAX
Circuit Current
Circuit Current1
ION1
0.5
1
2
mA
fSW=50KHz at Switching Mode
(GATE=OPEN)
Circuit Current at Sleep Mode
ISLEEP
60
120
200
μA
At Shutdown Mode
Circuit Current at Normal Mode
IACT
350
800
1400
μA
Switching STOP Mode,
Circuit Current at UVLO Mode
IOFF
18
35
60
μA
VCC=1.9V
VCC Item
VCC UVLO Threshold Voltage1
VUVLO1
2.00
2.30
2.65
V
VCC Sweep Up
VCC UVLO Threshold Voltage2
VUVLO2
1.95
2.25
2.60
V
VCC Sweep Down
SR Controller BLOCK
GATE Turn ON Threshold
VGONN
-150
-100
-50
mV
VDRAIN=-300mV to +300mV
GATE Turn OFF Threshold
VGOFF
-10
-6
-1
mV
VDRAIN=-300mV to +300mV
Compulsion ON Time(Note 5)
tCON
-9
-
9
%
Excluding BM1R00026-30 and
BM1R00146-150 which has no
Compulsion ON Time
Compulsion OFF Time(Note 5)
tCOFF
-9
-
9
%
MAX_TON BLOCK
MAX_TON Timer Start Threshold
Voltage
VMAX_ON_START
24
28
32
V
VCC=20V, DRAIN Terminal
Voltage
MAX_TON Timer
tMAX_ON
9.4
10
10.6
μs
RMAX_TON=100kΩ, VCC=3V,
VDRAIN=-0.3↔7V
MAX_TON Output Voltage
VMAX_ON
0.24
0.40
0.56
V
Auto Shutdown BLOCK
Auto Shutdown Detect Time
tSHD
120
200
320
μs
No Pulse to DRAIN Terminal
Auto Shutdown Cancel Pulse Number
PACT
-
265
-
time
Input Pulse to DRAN Terminal
Drain Monitor BLOCK
Drain Sink Current
ID_SINK
130
250
550
μA
VDRAIN=120V
Drain Terminal Source Current1
IDRAIN_SO1
-23
-11
-5
μA
VDRAIN=0.1V
Drain Terminal Source Current2
IDRAIN_SO2
-3
-1
-0.3
μA
VDRAIN=-0.2V
Driver BLOCK
GATE Terminal High Voltage
VGATE_H1
11
12
14
V
VCC=20V
High Side FET ON-Resistance
(VCC=2.7V)
RHIONR1
12.0
23.0
50.0
Ω
VCC=2.7V, IOUT= -10mA
High Side FET ON-Resistance
(VCC=5V)
RHIONR2
6.0
12.0
24.0
Ω
VCC=5.0V, IOUT= -10mA
High Side FET ON-Resistance
(VCC=10V)
RHIONR3
4.0
9.0
18.0
Ω
VCC=10V, IOUT= -10mA
Low Side FET ON-Resistance
(VCC=2.7V)
RLOWONR1
1.1
2.2
4.4
Ω
VCC=2.7V, IOUT= +10mA
Low Side FET ON-Resistance
(VCC=5V)
RLOWONR2
0.9
1.8
3.6
Ω
VCC=5.0V, IOUT= +10mA
Propagation Delay to FET Turn ON
tDELAY_ON
-
50
-
ns
VDRAIN=-300mV to +300mV
Propagation Delay to FET Turn OFF
tDELAY_OFF
-
100
-
ns
VDRAIN =-300mV to +300mV
(Note 5) See the lineup table in page1.
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TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
BM1R00xxxF
Electrical Characteristics (Unless otherwise specified VSH_OUT=20V Ta=25°C)
Parameter
Symbol
Spec
Unit
Conditions
MIN
TYP
MAX
Shunt Regulator BLOCK (Other Chip)
Reference Voltage
VSHREF
0.796
0.800
0.804
V
VSH_OUT=5V
SH_OUT Sink
Current=100µA
Reference Voltage
Changing Ratio by Temperature
∆VSHEMP
-
-4
-
mV
VSH_OUT=5V
SH_OUT Sink
Current=100µA
Temperature=25°C to 105°C
SH_OUT Coefficient
of the Reference Voltage1
∆VSHREF1
-
1
-
mV
VSH_OUT=2.7V to 5V
SH_OUT Sink
Current=100µA
SH_OUT Coefficient
of the Reference Voltage2
∆VSHREF2
-
2
-
mV
VSH_OUT=5V to 20V
SH_OUT Sink
Current=100µA
Reference Input Current
ISH_IN
-0.2
0.0
0.2
μA
VSH_IN=2V
Dynamic Impedance1
ZSH_OUT1
-
0.3
-
Ω
SH_OUT Sink Current
=100µA to 300µA
(VSH_OUT=2.7V)
Dynamic Impedance2
ZSH_OUT2
-
0.2
-
Ω
SH_OUT Sink Current
=100µA to 300µA
(VSH_OUT=20V)
SH_OUT Current at SH_IN=Low
ISH_OUT
20
40
75
μA
VSH_IN=0V, VSH_OUT=20V
SH_OUT Sink Current
ISH_OUT_MIN
1
-
-
mA
VSH_IN=0.85V, VSH_OUT=2.7V
SH_IN OVP Detection Voltage1
VSHI_OVP1
0.90
1.00
1.10
V
VSH_IN= Sweep Up
SH_IN OVP Detection Voltage2
VSHI_OVP2
0.85
0.95
1.05
V
VSH_IN= Sweep Down
SH_OUT OVP Detection Voltage
VSHO_OVP1
32.5
35
37.5
V
VSH_OUT Sweep Up
SH_OUT OVP Detection Voltage2
VSHO_OVP2
31.5
34
36.5
V
VSH_OUT Sweep Down
LATCH Timer
tLATCH2
100
200
300
μs
SH_OUT Sink Current
at LATCH Mode
ILATCH_SH_IN_OVP
1.3
2.5
5
mA
VSH_OUT=5V, VSH_IN=0V
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TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
BM1R00xxxF
Typical Performance Curves
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 5 10 15 20 25 30
Input Voltage Vcc[V]
Circuit Current IACT [mA]
Ta=-40°C
Ta=105°C
Figure 3. Circuit Current vs Input Voltage
(Stop Switching State)
Ta=25°C
Input Voltage : VCC [V]
Circuit Current : IACT [mA]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Input Voltage Vcc[V]
Circuit Current IACT [mA]
Figure 4. Circuit Current vs Input Voltage
(Stop Switching State VCC Zoom)
Ta=-40°C
Ta=25°C
Ta=105°C
Input Voltage : VCC [V]
Circuit Current : IACT [mA]
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30
Input Voltage Vcc[V]
Circuit Current ISLEEP [µA]
Ta=-40°C
Ta=105°C
Ta=25°C
Figure 5. Circuit Current vs Input Voltage
(at Shut Down State)
Input Voltage : VCC [V]
Circuit Current : ISLEEP [µA]
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30
Input Voltage Vcc[V]
SH_OUT Sink Current ISH_OUT [µA]
Ta=-40°C
Ta=105°C
Ta=25°C
Figure 6. Circuit Current vs SH_OUT Voltage
(VSH_IN=0V)
SH_OUT Voltage : VSH_OUT [V]
SH_OUT Sink Current : ISH_OUT [µA]
10/22
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
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TSZ22111 • 15 • 001
BM1R00xxxF
Typical Performance Curves - continued
0.780
0.785
0.790
0.795
0.800
0.805
0.810
0.815
0.820
-40 -20 0 20 40 60 80 100
Temperature Ta [℃]
SH_IN Voltage VSHREF [V]
Figure 7. SH_IN Voltage vs Temperature
(ISH_OUT=100µA)
VSH_OUT=20V
VSH_OUT=5V
VSH_OUT=3V
Temperature : Ta [°C]
SH_IN Voltage : VSHREF [V]
VCC=20V
VCC=5V
VCC=3V
9.0
9.2
9.4
9.6
9.8
10.0
10.2
10.4
10.6
10.8
11.0
-40 -20 0 20 40 60 80 100
Temperature Ta [℃]
MAX_TON Timer TMAX_ON [ µs]
Figure 8. MAX_TON Timer vs Temperature
(RMAX_TON=100kΩ, VDRAIN=-0.3V<->VCC x 2)
Temperature : Ta [°C]
MAX_TON Timer : tMAX_ON [µs]
VCC=20V
VCC=5V
VCC=3V
-110
-105
-100
-95
-90
-40 -20 0 20 40 60 80 100
Temperature Ta [℃]
Gate On Threshold Voltage V GON[mV]
Figure 9. Gate ON Threshold vs Temperature
(DRAIN Sweep Down)
Temperature : Ta [°C]
Gate ON Threshold Voltage : VGON [mV]
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-40 -20 0 20 40 60 80 100
Temperature Ta [℃]
Gate Off Threshold VoltageVGOFF [mV]
Figure 10. Gate OFF Threshold vs Temperature
(DRAIN Sweep Up)
Temperature : Ta [°C]
Gate OFF Threshold Voltage : VGOFF [mV]
VSH_OUT=20V
VSH_OUT=5V
VSH_OUT=3V
VSH_OUT=20V
VSH_OUT=5V
VSH_OUT=3V
11/22
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
BM1R00xxxF
Typical Performance Curves - continued
0
1000
2000
3000
4000
5000
740 760 780 800 820 840 860
SH_IN Voltage VSH_IN [V]
SH_OUT Current ISH_OUT [ µA]
Ta=105°C
V
Ta=25°C
Ta=-40°C
Figure 11. SH_OUT Current vs SH_IN Voltage
(VSH_OUT=5V)
SH_IN Voltage : VSH_IN [mV]
SH_OUT Current : ISH_OUT [µA]
Figure 12. SH_OUT Current vs SH_IN Voltage
(VSH_OUT=5V, ZOOM UP)
0
50
100
150
200
250
300
760 780 800 820 840
SH_IN Voltage VSH_IN [V]
SH_OUT Current ISH_OUT [ µA]
Ta=105°C
V
Ta=-40°C
Ta=25°C
SH_IN Voltage : VSH_IN [mV]
SH_OUT Current : ISH_OUT [µA]
12/22
BM1R00xxxF
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
VOUT(VCC)
REG4V(Internal IC)
VCC_UVLO
2.3V
VCC=2.3V
4V
4V
5V
REF1V
(Internal IC)
1V
DRAIN
MAX_TON
0.4V
GATE
200us
DRAIN
265COUNT
AUTO_SHUTDOWN
(Internal IC) SHUTDOWN
≒1.3V
BG_0.5V
(Internal IC)
0.5V
BG_OK
(Internal IC)
4V
DRV4V
(Internal IC)
DRAIN
4COUNT
DRAIN
9COUNT
Timing Chart
Figure 13. Start Up Sequence
13/22
BM1R00xxxF
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
Application Examples
Built-in shunt regulator in the IC has been completely separated from internal and synchronous rectification control IC.
Therefore, the shunt regulator is possible to be used as a GND reference in High Side type of flyback application.
Figure 14. Flyback Application Circuit
(Low Side FET)
Figure 15. Flyback Application Circuit
(High Side FET)
+
-
VOUT
GND
SH_IN
GATE
SH_GND
DRAIN
865
12 3 4
VCC
SH_OUT
7
SR_GND
MAX_TON
RMAX_TON
R1 C1
CVCC
RVCC
CFB1
CFB2
RFB1
RFB2
RSH_OUT1
RSH_OUT2
PC1
COUT
M1
D1RDRAIN1
RDRAIN2
LFB
+
-
VOUT
GND
SH_IN
GATE
SH_GND
DRAIN
865
1234
VCC
SH_OUT
7
SR_GND
MAX_TON
CFB2
RFB1
RFB2
RSH_OUT2
PC1
RVCC
RSH_OUT1
CVCC
CFB1
COUT
RMAX_TON
R1 C1
M1
RDRAIN1
RDRAIN2
LFB
D1
14/22
BM1R00xxxF
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
Regarding Protection Applications
The built-in shunt regulator is high-voltage, low current consumption, high accuracy, and also suitable as a comparator for
protection application. On the above current resonant circuit, the shunt regulator is used as an overvoltage protection
circuit.
Figure 16. Resonant Half-bridge Application Circuit
+
-
VOUT
GND
SH_IN
GATE
SH_GND
DRAIN
865
12 3 4
VCC
SH_OUT
7
SR_GND
MAX_TON
RDRAIN1
CVCC1
CFB1
CFB2
RFB1
RFB2
RSH_OUT1
RSH_OUT2
PC1
COUT
M1
SH_IN
GATE
SH_GND
DRAIN
865
1234
VCC
SH_OUT
7
SR_GND
MAX_TON
CVCC2
CFB3
RFB3
RSH_OUT13
PC2
M2
RFB4
RDRAIN3
RDRAIN4
LFB2
D2
RDRAIN2
LFB1
D1
Shunt regulator used as
overvoltage (OVP) protection
Disable MAX_TON by pulling up to VCC if not in
continuous mode operation such as in current resonance
and quasi-resonant applications
Shunt regulator used in
feedback operation
15/22
BM1R00xxxF
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
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TSZ22111 • 15 • 001
56k 100k 300k
30u
25.5u
34.5u
10.0u
10.6u
9.4u
5.6u
4.7u
6.5u
MAX_TON Resistor [ohm]
MAX_TON Timer [s]
Selection of Externally Connected Components
1. MAX_TON Pin Setting
A resistance value which is connected to the MAX_TON terminal is used to set the timer to force the GATE output OFF.
(For detailed operation, please see "each block Operation / MAX_TON blocks")
Set timer is proportional to the resistance value which can be set in the range of 56k to 300k. This IC is capable of an
accuracy of 10us ± 6% at 100kΩ. However, accuracy deteriorates as the resistance value gets further away from
100kΩ.
For example, 5.6µs ±0.9µs at 56kΩ, 30µs ±4.5µs at 300kΩ.
(See graph below)
To prevent destruction due to surge current in continuous mode, set the MAX_TON timer before turning on the primary
side FET (G1) to forcibly OFF the secondary side FET (G2). Regarding such variations, select a resistance value of
MAX_TON terminal so that the MAX_ON timer setting time is less than one cycle in the primary side (TP > TMAX_ON).
- The primary side of the maximum frequency = fMAX [Hz]
- The primary side of the maximum frequency accuracy = ∆fMAX [%]
- The primary side of the jitter frequency = fJITTER [Hz]
- Secondary side MAX_TON timer time = tMAX_ON
- Secondary side MAX_TON timer time accuracy = ∆tMAX_ON
- Secondary side MAX_TON When the connection resistance accuracy = ∆R
2. Calculation Example
Primary side frequency 100kHz ± 5%
Primary side jitter frequency 8kHz
Secondary side MAX_TON timer accuracy = 7%
Secondary side MAX_TON connection resistance accuracy = 1%
With these conditions, MAX_TON Resistor(RMAX_TON) should be set to 81kΩ or less. In addition, it is recommended that
the temperature characteristics of each component should also be taken into account.
Figure 17. MAX_TON Timer vs
MAX_TON Resistor(RMAX_TON)
Figure 18. Primary FET and Secondary FET
Sequence at CCM Mode
RMAX_TON[kΩ] <
10000 [kΩ][kHz]
(1+∆tMAX_ON[%]+∆R[%] +∆fMAX[%])×(fMAX[kHz]+fJITTER [kHz])
RMAX_TON [kΩ] <
10000 [kΩ][kHz]
(1+5%+1%+7%)×(100kHz+8kHz)
= 81.94 [kΩ]
Frequency Variation Ratio
Maximum Frequency Value
G1
TMAX_ON
MAX_TON
TIMER
Compulsion OFF
Timer Start
G2
Tp
Jitter
Set the MAX_TON timer so that
the FET of the primary side (G1)
and the secondary side (G2) is
not simultaneously ON
tMAX_ON
tP
G1
G2
16/22
BM1R00xxxF
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
I/O Equivalent Circuits
PIN 1: VCC / PIN 6: GATE / PIN 7: SR_GND
PIN 8: DRAIN
SR
block
Internal REG
6.GATE
7.SR_GND
1.VCC
8.DRAIN
7.SR_GND
PIN 2: SH_IN / PIN 3: SH_OUT / PIN 4: SH_GND
PIN 5: MAX_TON
2.SH_IN
4.SH_GND
3.SH_OUT
5.MAX_TON
Internal REG
17/22
BM1R00xxxF
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
Notes on the layout
(1) VCC line may malfunction under the influence of switching noise.
Therefore, it is recommended to insert a capacitor CVCC between the VCC and SR_GND terminal.
(2) SH_IN terminal is a high impedance line. To avoid crosstalk, electrical wiring should be as short as possible and not in
parallel with the switching line.
(3) MAX_TON terminal has a 0.4V output. The external components of the MAX_TON terminal affects the forced OFF time due
to switching. Thus, R1 and C1 should be connected to MAX_TON terminal as near as possible. It is also recommended to
use an independent electrical wiring in connection with SR_GND terminal.
(4) The synchronous rectification controller IC must accurately monitor the VDS generated in the FET. Accordingly, the electrical
wiring between the DRAIN to DRAIN and SR_GND to SOURCE of the IC and FET respectively should be connected
independently.
(5) The SH_GND of the shunt regulator and the feedback resistors of VOUT are recommended to be connected to the GND of
the output with an independent electrical wiring.
(6) The DRAIN terminal is a 0↔100V switching line. Use a narrow wiring and connect as short as possible.
(7) Use an independent wiring if connecting a snubber circuit between the DS of the FET. The connection of the transformer
output and the SOURCE of the FET should be thick and short as possible.
(8) Due to the DRAIN pin detects the small voltage, a malfunction which the switch turns ON/OFF caused by the surge voltage
may occur. So that, the filters such as the ferrite bead are recommended for alleviating the surge voltage.
Configuration example(Note 6) :
LFB1 ( a ferrite bead for suppressing the surge voltage) : MMZ1608S202A
D1 ( a schottky barrier diode) : RB751G-40
RDRAIN1 ( a filter resistor for the FET turn off ) : 0.3k - 2kΩ
RDRAIN2 ( a current limiting resistor to the DRAIN terminal) : 150Ω
(Note 6) The value is not a guaranteed value, but for reference. Please choose the optimum values of the components after sufficient evaluations based
on the actual application.
LFB1
+
-
VOUT
GND
SH_IN
GATE
SH_GND
DRAIN
8 6 5
1 2 3 4
VCC
SH_OUT
7
SR _GND
MAX_TON
RMAX_TON
R1 C1
CVCC
RVC C
CFB1
CFB 2
RFB 1
RFB 2
RSH_ O UT1
RSH_ O U T2
PC1
COUT
M1
Rsnb
Csnb
(7)
(6)
(5)
(4)
(3)
(2)
(1) (5)
D1
RDRAIN1
RDRAIN2
(8)
Figure 19. Flyback Application Circuit
(Low Side FET)
18/22
BM1R00xxxF
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3. Ground Voltage
Except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a
voltage below that of the ground pin at any time, even during transient condition.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5. Thermal Consideration
Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may
result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the
board size and copper area to prevent exceeding the maximum junction temperature rating.
6. Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
8. Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Terminals
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
19/22
BM1R00xxxF
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
Operational Notes - continued
12. Regarding Input Pins of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Figure 20. Example of Monolithic IC Structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within
the Area of Safe Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
BM1R00121F – BM1R00150F (Auto Restart Protection Series)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be
within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls
below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
BM1R00001F – BM1R00030F (Latch Protection Series)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be
within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. The IC should be
powered down and turned ON again to resume normal operation because the TSD circuit keeps the outputs at the OFF
state even if the TJ falls below the TSD threshold.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
N N
P+PN N
P+
P Substrate
GND
NP+N N
P+
NP
P Substrate
GND GND
Parasitic
Elements
Pin A
Pin A
Pin B Pin B
B C
EParasitic
Elements
GND
Parasitic
Elements
CB
E
Transistor (NPN)Resistor
N Region
close-by
Parasitic
Elements
20/22
BM1R00xxxF
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
BM1R00001 00001 1 1.3
BM1R00002 00002 1 2
BM1R00003 00003 1 3
BM1R00004 00004 1 3.6
BM1R00005 00005 1 4.6
BM1R00006 00006 1.5 1.3
BM1R00007 00007 1.5 2
BM1R00008 00008 1.5 3
BM1R00009 00009 1.5 3.6
BM1R00010 00010 1.5 4.6
BM1R00011 00011 2.3 1.3
BM1R00012 00012 2.3 2
BM1R00013 00013 2.3 3
BM1R00014 00014 2.3 3.6
BM1R00015 00015 2.3 4.6
BM1R00016 00016 2.8 1.3
BM1R00017 00017 2.8 2
BM1R00018 00018 2.8 3
BM1R00019 00019 2.8 3.6
BM1R00020 00020 2.8 4.6
BM1R00021 00021 3.5 1.3
BM1R00022 00022 3.5 2
BM1R00023 00023 3.5 3
BM1R00024 00024 3.5 3.6
BM1R00025 00025 3.5 4.6
BM1R00026 00026 NONE 1.3
BM1R00027 00027 NONE 2
BM1R00028 00028 NONE 3
BM1R00029 00029 NONE 3.6
BM1R00030 00030 NONE 4.6
Compulsion
ON Time
( μs)
Compulsion
OFF Time
( μs)
Function Name
Part Number
Marking
BM1R00121 00121 1 1.3
BM1R00122 00122 1 2
BM1R00123 00123 1 3
BM1R00124 00124 1 3.6
BM1R00125 00125 1 4.6
BM1R00126 00126 1.5 1.3
BM1R00127 00127 1.5 2
BM1R00128 00128 1.5 3
BM1R00129 00129 1.5 3.6
BM1R00130 00130 1.5 4.6
BM1R00131 00131 2.3 1.3
BM1R00132 00132 2.3 2
BM1R00133 00133 2.3 3
BM1R00134 00134 2.3 3.6
BM1R00135 00135 2.3 4.6
BM1R00136 00136 2.8 1.3
BM1R00137 00137 2.8 2
BM1R00138 00138 2.8 3
BM1R00139 00139 2.8 3.6
BM1R00140 00140 2.8 4.6
BM1R00141 00141 3.5 1.3
BM1R00142 00142 3.5 2
BM1R00143 00143 3.5 3
BM1R00144 00144 3.5 3.6
BM1R00145 00145 3.5 4.6
BM1R00146 00146 NONE 1.3
BM1R00147 00147 NONE 2
BM1R00148 00148 NONE 3
BM1R00149 00149 NONE 3.6
BM1R00150 00150 NONE 4.6
Function Name
Part Number
Marking
Compulsion
ON Time
( μs)
Compulsion
OFF Time
( μs)
Ordering Information
B
M
1
R
0
0
x
x
x
F
-
E 2
Part Number
Package
F:SOP8
Packaging and forming specification
E2: Embossed tape and reel
(SOP8)
Marking Diagram
Part Number Marking
Package
Orderable Part Number
00xxx
SOP8
BM1R00xxxF-E2
SOP8 (TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
Latch Protection Series
Auto Restart Protection Series
22/22
BM1R00xxxF
TSZ02201-0F4F0A2BM1R0-1-2
© 2016 ROHM Co., Ltd. All rights reserved.
20. Apr. 2016 Rev.002
www.rohm.com
TSZ22111 • 15 • 001
Revision History
Date
Revision
Changes
2.Mar.2016
001
Data Sheet Revision1 Release.
20.Apr. 2016
002
Modification: P4, P5 VOUT->VCC
20.Apr. 2016
002
Modification: P6, 74.2mm2->74.2mm x 74.2mm
20.Apr. 2016
002
Modification: P15, Fig17 graph.
Notice-PGA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅣ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
