AO4832 30V Dual N-Channel MOSFET General Description Product Summary The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V) VDS 30V 10A RDS(ON) (at VGS=10V) < 13m RDS(ON) (at VGS=4.5V) < 17.5m 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 D2 Bottom View Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current Avalanche Current C C Avalanche energy L=0.1mH TA=25C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: Jan. 2010 Steady-State Steady-State V A 8 55 IAS, IAR 22 A EAS, EAR 24 mJ 2 W 1.3 TJ, TSTG Symbol t 10s 20 IDM PD TA=70C Units V 10 ID TA=70C C Maximum 30 RJA RJL www.aosmd.com -55 to 150 Typ 48 74 32 C Max 62.5 90 40 Units C/W C/W C/W Page 1 of 6 AO4832 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V TJ=55C Gate-Body leakage current VDS=0V, VGS=20V VDS=VGS ID=250A 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 55 100 nA 1.9 2.5 V 10.8 13 15.5 19 VGS=4.5V, ID=8A 14 17.5 m 43 1 V 2.5 A VGS=10V, ID=10A Static Drain-Source On-Resistance TJ=125C gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 5 Gate Threshold Voltage Units V 1 IGSS Coss Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ A 0.75 m S 610 760 910 pF VGS=0V, VDS=15V, f=1MHz 88 125 160 pF 40 70 100 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.6 2.4 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 11 14 17 nC Qg(4.5V) Total Gate Charge 5 6.6 8 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=10A 2.4 nC 3 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/s 5.6 7 8 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/s 6.4 8 9.6 VGS=10V, VDS=15V, RL=1.5, RGEN=3 4.4 ns 9 ns 17 ns 6 ns ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Jan. 2010 www.aosmd.com Page 2 of 6 AO4832 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V VDS=5V 6V 80 5V 25 4.5V 20 ID (A) 60 ID(A) 7V 4V 15 40 125C 10 3.5V 20 25C 5 VGS=3V 0 0 1 2 3 4 0 0 5 20 2 3 4 5 Normalized On-Resistance 1.6 VGS=4.5V RDS(ON) (m ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 15 10 VGS=10V VGS=10V ID=10A 1.4 VGS=4.5V ID=8A 17 5 2 10 100 150 1.2 1 0.8 5 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 125 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 30 1.0E+02 ID=10A 1.0E+01 25 40 125C 20 IS (A) RDS(ON) (m ) 1.0E+00 15 25C 125C 1.0E-01 1.0E-02 1.0E-03 10 25C 1.0E-04 1.0E-05 5 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Jan. 2010 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4832 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=10A 1000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 800 600 400 Coss 2 200 0 Crss 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 100 30 1000.0 TA=25C IAR (A) Peak Avalanche Current 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics TA=100C 10 TA=125C TA=150C ID (Amps) 100.0 RDS(ON) limited 10.0 10s 100s 1ms 1.0 10ms TJ(Max)=150C TA=25C 0.1 10s DC 0.0 1 1 0.01 10 100 1000 Time in avalanche, tA ( s) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 0: Jan. 2010 www.aosmd.com Page 4 of 6 AO4832 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=90C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Jan. 2010 www.aosmd.com Page 5 of 6 AO4832 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Jan. 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6