AP9575AGI-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement -60V RDS(ON) 64m ID Fast Switching Characteristic RoHS Compliant & Halogen-Free BVDSS G -17A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D TO-220CFM(I) S Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, VGS @ 10V -17 A ID@TC=100 Continuous Drain Current, VGS @ 10V -11 A 1 IDM Pulsed Drain Current -60 A PD@TC=25 Total Power Dissipation 31.3 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 4.0 /W 65 /W 1 200908031 AP9575AGI-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A - - 64 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-8A - 17 - S IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=-12A - 35 56 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-48V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-10V - 12 - nC VDS=-30V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-12A - 23 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 45 - ns tf Fall Time RD=2.5 - 60 - ns Ciss Input Capacitance VGS=0V - 1440 2300 pF Coss Output Capacitance VDS=-25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Rg Gate Resistance f=1.0MHz - 8.6 - Min. Typ. IS=-12A, VGS=0V - - -1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-12A, VGS=0V, - 43 - ns Qrr Reverse Recovery Charge dI/dt=-100A/s - 75 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9575AGI-HF 40 50 -ID , Drain Current (A) 40 30 V G = - 4 .0 V 20 -10V -7.0V -6.0V -5.0V T C =150 o C -ID , Drain Current (A) -10V - 7 .0V - 6 .0V - 5.0 V T C = 25 o C 30 V G = -4.0V 20 10 10 0 0 0 2 4 6 0 8 2 4 6 8 10 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 2.4 I D = - 12 A V G = -10V I D = -8 A T C =25 2.0 Normalized RDS(ON) RDS(ON) (m ) 70 60 1.6 1.2 50 0.8 0.4 40 2 4 6 8 0 50 100 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 10 1.2 Normalized -VGS(th) (V) 12 8 -IS(A) -50 10 T j =150 o C 6 T j =25 o C 4 150 1.0 0.8 0.6 0.4 2 0 0.2 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9575AGI-HF f=1.0MHz 12 2400 10 2000 8 1600 C (pF) -VGS , Gate to Source Voltage (V) V DS = - 48 V I D = - 12 A 6 C iss 1200 4 800 2 400 0 0 0 10 20 30 C oss C rss 1 40 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 Operation in this area limited by RDS(ON) 100us -ID (A) 10 1ms 10ms 100ms 1s DC 1 T c =25 o C Single Pulse 0 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0.1 1 10 100 1000 0.00001 0.0001 0.001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG -10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4