Document Number: 94347 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 07-Jul-09 1
Input Rectifier Diode, 80 A
80EPS..PbF High Voltage Series
Vishay High Power Products
DESCRIPTION/FEATURES
The 80EPS..PbF rectifier High Voltage Series
has been optimized for very low forward voltage
drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.
This product has been designed and qualified for industrial
level.
Compliant to RoHS directive 2002/95/EC.
PRODUCT SUMMARY
VF at 80 A 1.17 V
IFSM 1450 A
VRRM 800/1200 V
TO-247AC Anode
13
Base
cathode
Anode
4, 2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 80 A
VRRM Range 800/1200 V
IFSM 1450 A
VF80 A, TJ = 25 °C 1.17 V
TJ- 40 to 150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
80EPS08PbF 800 900 1
80EPS12PbF 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 100 °C, 180° conduction half sine wave 80
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 1450
10 ms sine pulse, no voltage reapplied 1500
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 10 500 A2s
10 ms sine pulse, no voltage reapplied 14 000
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 105 000 A2s
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94347
2Revision: 07-Jul-09
80EPS..PbF High Voltage Series
Vishay High Power Products Input Rectifier Diode, 80 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 80 A, TJ = 25 °C 1.17 V
Forward slope resistance rtTJ = 150 °C 3.17 mΩ
Threshold voltage VF(TO) 0.73 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM
0.1 mA
TJ = 150 °C 1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 0.35
°C/W
Maximum thermal resistance,
junction to ambient RthJA 40
Typical thermal resistance,
case to heatsink RthCS Mounting surface, flat, smooth and greased 0.2
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) 80EPS08
80EPS12
Document Number: 94347 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 07-Jul-09 3
80EPS..PbF High Voltage Series
Input Rectifier Diode, 80 A Vishay High Power Products
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
100
110
120
130
140
150
90
80
Maximum Allowable Case
Temperture (°C)
Average Forward Current (A)
8070605040302010 90
0
30° 60°
90°
120°
180°
80EPS.. Series
RthJC (DC) = 0.35 K/W
Conduction angle
Ø
140
150
130
120
110
100
90
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
14012010080604020
0
DC
30°
60°
90°
120°
180°
80EPS.. Series
RthJC (DC) = 0.35 K/W
Ø
Conduction period
0
80
60
40
20
100
120
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
2010 30 40 80 90
50 60 70
0
RMS limit
180°
120°
90°
60°
30°
80EPS.. Series
TJ = 150 °C
Conduction angle
Ø
0
80
60
40
20
100
120
140
160
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20 40 120 140
60 80 100
0
DC
180°
120°
90°
60°
30°
RMS limit
80EPS.. Series
TJ = 150 °C
Ø
Conduction period
800
600
400
1600
1400
1200
1000
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitudr Halfe
Cycle Current Pulse (N)
10 1001
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
80EPS.. Series
800
600
400
1800
1600
1400
1200
1000
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.1 1
0.01
80EPS.. Series
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
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4Revision: 07-Jul-09
80EPS..PbF High Voltage Series
Vishay High Power Products Input Rectifier Diode, 80 A
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
1
10
100
1000
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
1.00.5 1.5 2.0 4.0
2.5 3.0 3.5
0
TJ = 25 °C
TJ = 150 °C
80EPS.. Series
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
ZthJC - Transient Thermal
Impedance (°C/W)
10
Steady state value
(DC operation)
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08 80EPS.. Series
Document Number: 94347 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 07-Jul-09 5
80EPS..PbF High Voltage Series
Input Rectifier Diode, 80 A Vishay High Power Products
ORDERING INFORMATION TABLE
1- Current rating (80 = 80 A)
5- Voltage ratings
6- None = Standard production
PbF = Lead (Pb)-free
2- Circuit configuration:
E = Single diode
3- Package:
P = TO-247AC
4- Type of silicon:
S = Standard recovery rectifier
08 = 800 V
12 = 1200 V
Device code
51324
6
80 E P S 12 PbF
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95223
Part marking information www.vishay.com/doc?95226
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 16-Jun-11 1Document Number: 95223
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 FK 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
0.10 AC
M M
E
N
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6) Ø P (Datum B)
FP1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Planting Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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