SE3455/5455
GaAs Infrared Emitting Diode
FEATURES
•TO-46 metal can package
•Choice of flat window or lensed package
•90° or 20° (nominal) beam angle option
•935 nm wavelength
•Wide operating temperature range
(-55°C to +125°C)
•Ideal for high pulsed current applications
•Mechanically and spectrally matched to
SD3421/5421 photodiode, SD3443/5443/5491
phototransistor, SD3410/5410 photodarlington and
SD5600 series Schmitt trigger
INFRA-83.TIF
DESCRIPTION
The SE3455/5455 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3455 series has flat window cans
providing a wide beam angle, while the SE5455 series
has glass lensed cans providing a narrow beam angle.
These devices are constructed with dual bond wires
suitable for pulsed current applications. The TO-46
packages offer high power dissipation capability and are
ideally suited for operation in hostile environments.
INFRA--5.DIM
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
SE3455
SE5455
2. ANODE
1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.
(.460)
.018
MIN.
(12.70)
.500
(0.36)
.015
.140 (3.56)
.153 (3.89)
DIA.
.137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52) DIA.
DIA.
.208 (5.28)
.219 (5.56)
.100(2.54)DIA
NOM
45°
.048(1.22)
.028(.71)
(CASE)
2. ANODE (CASE)
1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.
(.460)
.018
MIN.
(12.70)
.500
(0.36)
.015
5.08
.200
DIA.
.137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52) DIA.
DIA.
.208 (5.28)
.219 (5.56)
.100(2.54)DIA
NOM
45°
.048(1.22)
.028(.71)
.224 (5.89)
.247 (6.27)
26 Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
© Honeywell Europe S.A.
SE3455/5455
GaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS (25 °C unless otherwise noted)
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Total Power Output POmW IF=100 mA
SE3455-001, SE5455-001 2.0
SE3455-002, SE5455-002 3.5
SE3455-003, SE5455-003 4.8
SE3455-004, SE5455-004 5.4
Forward Voltage VF1.7 V IF=100 mA
Reverse Breakdown Voltag e VBR 3.0 V IR=10 µA
Peak Output Wavelength λp935 nm
Spectral Bandwidth ∆λ 50 nm
Spectral Shift With Temperature ∆λp/∆T0.3 nm/°C
Beam Angle(1) Ø degr. IF=Constant
SE3455 90
SE5455 20
Radiation Rise And Fall Time tr, tf0.7 µs
Notes
1. Beam angle is defined as the total included angle between the half intensity points.
ABSOLUTE MAXIMUM RATINGS
(25°C Free-Air Temperature unless otherwise noted)
Continuous Forward Curre nt 100 mA
Peak Forward Curr ent 3 A
(1µs pulse width, 300 pps)
Power Dissipation 150 mW(1)
Operating Temperature Range -55°C to 125°C
Storage Temperature Range -65°C to 150°C
Soldering Temperature (10 sec) 260°C
Notes
1. Derate linearly from 25°C free-air temperat ure at th e
rate of 1.43 mW/°C.
INFRA--1.SCH
SCHEMATIC
Cathode
Anode
27
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE3455/5455
GaAs Infrared Emitting Diode
Fig. 1 Radiant Intensity vs
Angular Displacement (SE3455)
INFRA-17.GRA
INFRA-23.GRA
Fig. 2 Radiant Intensity vs
Angular Displacement (SE5455)
Fig. 3 Radiant Intensity vs
Forward Current
INFRA-18.GRA
INFRA-19.GRA
Fig. 4 Forward Voltage vs
Forward Current
Fig. 5 Forward Voltage vs
Temperature
INFRA-20.GRA
INFRA--5.GRA
Fig. 6 Spectral Bandwidth
All Performance Curves Show Typical Values
Angular displacement - degrees
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Angular displacement - degrees
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Forward current - mA
Forward voltage - V
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
0 20 40 60 80 100
Forward current - mA
Normalized radiant
intensity - %
0.0
50
100
150
200
250
0 100 200 300 400 500
Pulsed
Wavelength - nm
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
870 890 910 930 950 970 990 1010
Temperature - °C
Forward voltage - V
1.21
1.23
1.25
1.27
1.29
1.31
1.33
1.35
-30 -10 10 30 50 70 90
IF = 100 mA
28 Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE3455/5455
GaAs Infrared Emitting Diode
Fig. 7 Coupling Characteristics
SE3455 with SD3443
INFRA-21.GRA
INFRA-24.GRA
Fig. 8 Coupling Characteristics
SE5455 with SD5443
Fig. 9 Radiant Intensity vs
Case Temperature
INFRA-22.GRA
Lens-to-lens distance - inches
Normalized light
current
0.0
0.2
0.4
0.6
0.8
1.0
0 2 4 6 7 9 1 3 5 8
Window-to-window distance - inches
Normalized light
current
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.2 0.4 0.6 0.8 1.0
Case temperature - °C
Normalized radiant intensity
0.1
0.2
0.3
0.4
0.5
1.0
2.0
3.0
4.0
5.0
-75 -50 -25 0 25 50 75 100 125
Normalized to
I
F
= 100 mA
T
A
= 25 °C
29
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
