© 2010 IXYS All rights reserved 1 - 3
IXYS reserves the right to change limits, test conditions and dimensions.
VHFD 29
20100705a
VRRM = 800-1600 V
IdAVM = 32 A
Symbol Conditions Maximum Ratings
IdAV TH = 85°C, module 28 A
IdAVM module 32 A
IFRMS, ITRMS per leg 25 A
IFSM, ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 V t = 8.3 ms (60 Hz), sine 330 A
TVJ = TVJM t = 10 ms (50 Hz), sine 270 A
VR = 0 V t = 8.3 ms (60 Hz), sine 300 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 440 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 455 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 365 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 370 A2s
(di/dt)cr TVJ = 125°C repetitive, IT = 50 A 150 A/μs
f = 50 Hz, tP = 200 μs
VD = 2/3 VDRM
IG = 0.3 A, non repetitive, IT = 0.5 IdAV 500 A/μs
diG/dt = 0.3 A/μs
(dv/dt)cr TVJ = T(vj)m; VDR = 2/3 VDRM 1000 V/μs
RGK = ∞; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp = 30 μs≤10 W
IT = 0.5 IdAVM tp = 500 μs≤5W
tp = 10 ms ≤1W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
dSCreep distance on surface 12.7 mm
dAStrike distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
MdMounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
Weight 35 g
VRSM VRRM Type
VDSM VDRM
VV
900 800 VHFD 29-08io1
1300 1200 VHFD 29-12io1
1700 1600 VHFD 29-16io1
Dimensions in mm (1 mm = 0.0394")
Bridge and Freewheeling Diode
Features
Package with DCB ceramic base
plate
Isolation voltage 3600 V~
Planar passivated chips
Blocking voltage up to 1600 V
Low forward voltage drop
Leads suitable for PC board soldering
UL registered E 72873
Applications
Supply for DC power equipment
DC motor control
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
Half Controlled
Single Phase Rectifier Bridge
Including Freewheeling Diode and Field Diodes
135
2
6810
© 2010 IXYS All rights reserved 2 - 3
IXYS reserves the right to change limits, test conditions and dimensions.
VHFD 29
20100705a
Symbol Conditions Characteristic Values
IR, IDVR = VRRM; VD = VDRM TVJ = TVJM ≤5mA
TVJ = 25°C≤0.3 mA
VT, VFIT, IF = 45 A; TVJ = 25°C≤1.6 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.9 V
rT15 mΩ
VGT VD = 6 V; TVJ = 25°C≤1.0 V
TVJ = -40°C≤1.2 V
IGT VD = 6 V; TVJ = 25°C≤65 mA
TVJ = -40°C≤80 mA
TVJ = 125°C≤50 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM ≤0.2 V
IGD TVJ = TVJM;V
D = 2/3 VDRM ≤5mA
ILIG = 0.3 A; tG = 30 μs; TVJ = 25°C≤150 mA
diG/dt = 0.3 A/μs; TVJ = -40°C≤200 mA
TVJ = 125°C≤100 mA
IHTVJ = 25°C; VD = 6 V; RGK = ∞≤100 mA
tgd TVJ = 25°C; VD = 0.5VDRM ≤2μs
IG = 0.3 A; diG/dt = 0.3 A/μs
tqTVJ = 125°C, IT = 15 A, tP = 300 μs, VR = 100 V typ. 150 μs
Qrdi/dt = -10 A/μs, dv/dt = 20 V/μs, VD = 2/3 VDRM 75 μC
RthJC per thyristor (diode); DC current 1.4 K/W
per module 0.35 K/W
RthJH per thyristor (diode); DC current 2.0 K/W
per module 0.5 K/W
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
for resistive load
Symbol Conditions Maximum Ratings
IFAV TH = 85°C, per Diode 4 A
IFAVM per diode 4 A
IFRMS per diode 6 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 100 A
VR = 0 V t = 8.3 ms (60 Hz), sine 110 A
TVJ = TVJM t = 10 ms (50 Hz), sine 85 A
VR = 0 V t = 8.3 ms (60 Hz), sine 94 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 50 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 50 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 36 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 37 A2s
IRVR = VRRM TVJ = TVJM 1mA
TVJ = 25°C 0.15 mA
VFIF = 21 A; TVJ = 25°C 1.83 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.9 V
rT50 mΩ
RthJC per diode; DC current 4.4 K/W
RthJH per diode; DC current 5.2 K/W
Field Diodes
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time tgd
1 10 100 1000
0.1
1
10
IG
VG
mA
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
V
4: PGAV = 0.5 W
5: PGM = 1 W
6: PGM = 10 W
IGD, TVJ = 125°C
4
2
1
5
6
10 100 1000
1
10
100
1000
μs
tgd
TVJ = 25°C
typ. Limit
mA
IG
3
© 2010 IXYS All rights reserved 3 - 3
IXYS reserves the right to change limits, test conditions and dimensions.
VHFD 29
20100705a
0.001 0.01 0.1 1
0
40
80
120
160
200
240
23456789110
101
102
103
0.00.51.01.52.0
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30 35
0
20
40
60
80
100
0 204060801001201400
0.001 0.01 0.1 1 10
0.0
0.5
1.0
1.5
2.0
2.5
I2t
IFSM
IF
A
VFt
s
t
ms
Ptot
W
Id(AV)M
A
Tamb
t
s
ZthJH
K/W
A2s
0 20406080100120
0
5
10
15
20
25
30
35
Id(AV)M
TH
A
V
A
°C °C
TVJ = 45°C
VR = 0 V
Fig. 3 Forward current vs. voltage
drop per diode
Fig. 4 Surge overload current Fig. 5 I2t versus time per diode
Fig. 6 Power dissipation vs. direct output current and ambient temperature Fig. 7 Max. forward current vs.
heatsink temperature
Constants for ZthJH calculation:
iR
thi (K/W) ti (s)
1 0.007 0.008
2 0.266 0.05
3 1.127 0.06
4 0.6 0.25
TVJ = 125°C
TVJ = 45°C
TVJ = 125°C
TVJ = 125°C
TVJ = 25°C
typ.
max.
RthHA :
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
50Hz, 80% VRRM
Fig. 8 Transient thermal impedance junction to heatsink
