R07DS1254EJ0400 Rev.4.00 Page 1 of 8
Mar 25, 2015
Data Sheet
2SK3147(L), 2SK3147(S)
100V, 5A, 0.13Ωmax.
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 0.1 typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
123
4
123
4D
G
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 100 V
Gate to source voltage VGSS 20 V
Drain current ID 5 A
Drain peak current ID(pulse)Note1 20 A
Body-drain diode reverse drain current IDR 5 A
Avalanche current IAP Note3 5 A
Avalanche energy EAR Note3 2.5 mJ
Channel dissipation Pch Note2 20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
R07DS1254EJ0400
(Previous: REJ03G1072-0300)
Rev.4.00
Mar 25, 2015
2SK3147(L), 2SK3147(S)
R07DS1254EJ0400 Rev.4.00 Page 2 of 8
Mar 25, 2015
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS 20 — — V IG = 100 A, VDS = 0
Gate to source leak current IGSS — — 10 A VGS = 16 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 A VDS = 100 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.1 0.13 I
D = 3 A, VGS = 10 VNote4
RDS(on) — 0.13 0.17 I
D = 3 A, VGS = 4 V Note4
Forward transfer admittance |yfs| 3.5 6 — S ID = 3 A, VDS = 10 V Note4
Input capacitance Ciss — 420 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance Coss — 185 — pF
Reverse transfer capacitance Crss — 100 — pF
Turn-on delay time td(on) — 10 — ns
ID = 3 A, VGS = 10V,
RL = 10
Rise time tr — 35 — ns
Turn-off delay time td(off) — 110 — ns
Fall time tf — 60 — ns
Body–drain diode forward voltage VDF — 0.85 — V IF = 5 A, VGS = 0
Body–drain diode reverse recovery
time trr — 85 — ns
IF = 5 A, VGS = 0
diF/ dt = 50 A/ s
Note: 4. Pulse test
2SK3147(L), 2SK3147(S)
R07DS1254EJ0400 Rev.4.00 Page 3 of 8
Mar 25, 2015
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature T
C
(°C)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain Current I
D
(A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
40
30
20
10
050 100 150 200
50
20
10
5
1
0.1
12 5
10 20 50 100
10
8
6
4
2
012345
0246810
Ta = 25°C
Tc = 75°C
25°C
–25°C
Operation in
this area is
limited by R
DS(on)
V
DS = 10 V
Pulse Test
100 μs
1 ms
PW =10 ms (1shot)
DC Operation (Tc = 25°C)
10 μs
10
8
6
4
2
3.5 V
3 V
V
GS
=2.5 V
10 V Pulse Test
6 V
4 V
500
2
0.2
0.5
200
0.1 1 100.2 5
0.5
0.02
0.05
0.01
20.5
2.5
2.0
1.5
1.0
0.5
048
12 16 20
ID = 5 A
1 A
2 A
5020
0.2
0.1
V
GS
= 4 V
10 V
Pulse Test
Pulse Test
2SK3147(L), 2SK3147(S)
R07DS1254EJ0400 Rev.4.00 Page 4 of 8
Mar 25, 2015
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance ⏐yfs⏐ (S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
0.50
0.40
0.30
0.20
0.10
–40 0 40 80 120 160
0
0.1 0.3 1 3 10 30 100
50
20
5
10
1
2
0.5
V
GS
= 4 V
10 V
1, 2 A
5 A
25°C
Tc = –25°C
75°C
Pulse Test
V
DS
= 10 V
Pulse Test
1, 2 A
5 A
0.1 0.3 1 3 10 30 100 01020304050
2000
5000
1000
100
200
500
200
160
120
80
40
0
20
16
12
8
4
8 16243240
0
1000
500
50
100
20
10
200
500
300
30
100
3
10
1
0.1 0.3 1310 30 100
di / dt = 50 A / μs
V
GS
= 0, Ta = 25°C
10
20
50
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 5 A
V
GS
V
DS
V
DD
= 100 V
50 V
25 V
V
DD
= 100 V
50 V
25 V
tf
tr
td(on)
td(off)
V
GS
= 10 V, V
DD
= 30 V
PW = 5 μs, duty < 1 %
2SK3147(L), 2SK3147(S)
R07DS1254EJ0400 Rev.4.00 Page 5 of 8
Mar 25, 2015
Pulse Width PW (S)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
0
ID
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
Avalanche Test Circuit Avalanche Waveform
10
8
6
4
2
00.4 0.8 1.2 1.6 2.0
V
GS
= 0, –5 V
10 V
5 V
2.5
2.0
1.5
1.0
0.5
25 50 75 100 125 150
0
Pulse Test
I
AP= 5 A
V
DD = 50 V
duty < 0.1 %
Rg > 50 Ω
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 6.25°C/W, Tc = 25°C
θ γ θ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Tc = 25°C
2SK3147(L), 2SK3147(S)
R07DS1254EJ0400 Rev.4.00 Page 6 of 8
Mar 25, 2015
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 30 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
Switching Time Test Circuit Switching Time Waveforms
2SK3147(L), 2SK3147(S)
R07DS1254EJ0400 Rev.4.00 Page 7 of 8
Mar 25, 2015
Package Dimensions
6.5 ± 0.52.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.51.7 ± 0.5
16.2 ± 0.5
4.7 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.52.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
3.1 ± 0.5
(0.7)
Previous Code
PRSS0004ZD-B
DPAK(L)-(2) / DPAK(L)-(2)V
MASS[Typ.]
0.42g⎯
RENESAS CodeJEITA Package Code
Unit: mm
Package Name
DPAK(L)-(2)
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
1.0 Max.
(0.1)(0.1)
Previous Code
PRSS0004ZD-CDPAK(S) / DPAK(S)V
MASS[Typ.]
0.28gSC-63
RENESAS CodeJEITA Package Code
Unit: mm
Package Name
DPAK(S)
2SK3147(L), 2SK3147(S)
R07DS1254EJ0400 Rev.4.00 Page 8 of 8
Mar 25, 2015
Ordering Information
Part Name Quantity Shipping Container
2SK3147L-E 3200 pcs Box (Sack)
2SK3147STR-E 3000 pcs Taping
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