Data Sheet 2SK3147(L), 2SK3147(S) 100V, 5A, 0.13max. Silicon N Channel Power MOS FET High Speed Power Switching R07DS1254EJ0400 (Previous: REJ03G1072-0300) Rev.4.00 Mar 25, 2015 Features Low on-resistance RDS = 0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) D 4 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 S 2 3 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 100 20 5 20 5 5 2.5 20 150 -55 to +150 Unit V V A A A A mJ W C C Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 R07DS1254EJ0400 Rev.4.00 Mar 25, 2015 Page 1 of 8 2SK3147(L), 2SK3147(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 20 -- -- 1.0 -- -- 3.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.1 0.13 6 420 185 100 10 35 110 60 0.85 85 Max -- -- 10 10 2.5 0.13 0.17 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 3 A, VGS = 10 VNote4 ID = 3 A, VGS = 4 V Note4 ID = 3 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 3 A, VGS = 10V, RL = 10 IF = 5 A, VGS = 0 IF = 5 A, VGS = 0 diF/ dt = 50 A/ s 4. Pulse test R07DS1254EJ0400 Rev.4.00 Mar 25, 2015 Page 2 of 8 2SK3147(L), 2SK3147(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 50 s 0 m s (1 sh tio ot n 1 Operation in this area is 0.5 limited by RDS(on) (T ) c = 25 C ) Drain Current ID (A) m =1 ra 2 Ta = 25C 0.1 50 100 150 1 200 2 5 10 20 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 V Pulse Test 3.5 V 8 6V 4V 6 3V 4 2 8 VDS = 10 V Pulse Test 6 4 Tc = 75C -25C 2 VGS =2.5 V 2 4 6 8 25C 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 2.5 Pulse Test 2.0 1.5 1.0 ID = 5 A 0.5 2A 0 0 10 4 8 12 1A 16 20 Gate to Source Voltage VGS (V) R07DS1254EJ0400 Rev.4.00 Mar 25, 2015 Static Drain to Source on State Resistance RDS (on) () 0 50 100 200 500 Case Temperature TC (C) Drain Current ID (A) 10 Drain Current ID (A) 1 5 s 0.2 0 Drain to Source Saturation Voltage VDS (on) (V) s 0 PW pe O 10 10 10 C 20 10 20 30 D Channel Dissipation Pch (W) 40 0.5 Pulse Test 0.2 VGS = 4 V 0.1 10 V 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 50 Drain Current ID (A) Page 3 of 8 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 2SK3147(L), 2SK3147(S) 0.50 Pulse Test 0.40 1, 2 A 0.30 5A VGS = 4 V 0.20 5A 0.10 1, 2 A 10 V 0 -40 0 40 80 120 160 Tc = -25C 25C 10 5 75C 2 1 0.5 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 5000 di / dt = 50 A / s VGS = 0, Ta = 25C 2000 Capacitance C (pF) 500 200 100 50 20 1000 500 Ciss 200 Coss 100 50 Crss VGS = 0 f = 1 MHz 20 200 10 0.3 1 3 10 30 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 5 A VDD = 100 V 50 V 25 V 160 16 120 12 VGS VDS 80 8 40 0 0 100 4 VDD = 100 V 50 V 25 V 8 16 24 32 Gate Charge Qg (nc) R07DS1254EJ0400 Rev.4.00 Mar 25, 2015 0 40 500 300 Switching Time t (ns) 10 0.1 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 20 Case Temperature TC (C) 1000 Drain to Source Voltage VDS (V) 50 td(off) 100 tf 30 tr 10 td(on) 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 % 0.3 1 3 10 30 100 Drain Current ID (A) Page 4 of 8 2SK3147(L), 2SK3147(S) 8 6 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) (A) 10 Reverse Drain Current IDR Reverse Drain Current vs. Source to Drain Voltage 10 V 4 VGS = 0, -5 V 5V 2 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 2.5 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 Channel Temperature Tch (C) VSD (V) Source to Drain Voltage IAP= 5 A VDD = 50 V duty < 0.1 % Rg > 50 Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C D=1 1 0.5 0.3 0.2 0.1 0.05 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25C/W, Tc = 25C 0.02 1 0.0 0.03 e uls PDM tP 1 o sh D= PW T PW T 0.01 10 100 1m 100 m 10 m Pulse Width 10 PW (S) Avalanche Test Circuit VDS Monitor 1 Avalanche Waveform L EAR = 1 2 * L * IAP2 * VDSS VDSS - VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 0 R07DS1254EJ0400 Rev.4.00 Mar 25, 2015 VDD Page 5 of 8 2SK3147(L), 2SK3147(S) Switching Time Test Circuit Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 VDD = 30 V Vout 10% 10% 10% 90% td(on) R07DS1254EJ0400 Rev.4.00 Mar 25, 2015 tr 90% td(off) tf Page 6 of 8 2SK3147(L), 2SK3147(S) Package Dimensions JEITA Package Code RENESAS Code PRSS0004ZD-B Previous Code MASS[Typ.] DPAK(L)-(2) / DPAK(L)-(2)V 0.42g 1.7 0.5 Package Name DPAK(L)-(2) 2.3 0.2 0.55 0.1 1.2 0.3 16.2 0.5 3.1 0.5 1.15 0.1 0.8 0.1 (0.7) 4.7 0.5 5.5 0.5 6.5 0.5 5.4 0.5 Unit: mm 0.55 0.1 0.55 0.1 2.29 0.5 JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Previous Code DPAK(S) / DPAK(S)V 6.5 0.5 5.4 0.5 (0.1) MASS[Typ.] 0.28g Unit: mm 2.3 0.2 0.55 0.1 (5.1) (5.1) (0.1) 1.2 Max 5.5 0.5 1.5 0.5 Package Name DPAK(S) 2.29 0.5 0 - 0.25 2.5 0.5 (1.2) 1.0 Max. 2.29 0.5 R07DS1254EJ0400 Rev.4.00 Mar 25, 2015 0.8 0.1 0.55 0.1 2.29 0.5 Page 7 of 8 2SK3147(L), 2SK3147(S) Ordering Information Part Name 2SK3147L-E 2SK3147STR-E Quantity 3200 pcs 3000 pcs R07DS1254EJ0400 Rev.4.00 Mar 25, 2015 Shipping Container Box (Sack) Taping Page 8 of 8 Notice 1. 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