6MBI35S-140 IGBT Modules IGBT MODULE ( S series) 1400V / 35A 6 in one-package Features * Compact Package * P.C.Board Mount Module * Low VCE(sat) Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tj=25C current Tj=75C 1ms Tj=25C Tj=75C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *2 Rating 1400 20 50 35 100 70 35 70 240 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A 2(Eu) A A W C C V N*m ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Diode forward on voltage Cies Coes Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time t No 9(Gw) 10(Ew) Characteristics Min. Typ. - - - - 5.5 7.2 - 2.4 - 3.0 - 4200 - 875 - 770 - 0.35 - 0.25 - 0.1 - 0.45 - 0.08 - 2.6 - 2.2 - - Max. 1.0 0.2 8.5 2.75 - - - - 1.2 0.6 - 1.0 0.3 3.4 - 0.35 Characteristics Min. Typ. Max. o c e r 15(V) 16(U) 3(Gx) 7(Gy) 11(Gz) 8(Ey) 12(Ez) 4(Ex) 17(N) de ew n for nd e mm Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage 5(Gv) 6(Ev) 1(Gu) Electrical characteristics (at Tj=25C unless otherwise specified) Symbol 13(P) A *1:All terminals should be connected together when isolation test will be done. *2: Recommendable value : 2.5 to 3.5 N*m (M5) Item Equivalent Circuit Schematic . n sig Conditions Unit VGE=0V, VCE=1400V VCE=0V, VGE=20V VCE=20V, IC=35mA Tj=25C VGE=15V, IC=35A Tj=125C VGE=0V VCE=10V f=1MHz VCC =800V IC=35A VGE=15V RG=33 mA A V V Tj=25C Tj=125C IF=35A V IF=35A, VGE=0V pF s s Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 - - - - - 0.05 0.52 0.90 - Conditions Unit IGBT FWD the base to cooling fin C/W C/W C/W *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ 14(W) 6MBI35S-140 IGBT Module Characteristics [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 80 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 80 VGE= 20V15V 12V VGE= 20V 15V 12V 60 Collector current : Ic [ A ] Collector current : Ic [ A ] 60 10V 40 20 10V 40 20 8V 8V 0 0 0 80 1 2 3 4 5 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 5 10 Tj= 125C Tj= 25C Collector - Emitter voltage : VCE [ V ] 8 ew n for 40 e m m 4 n sig Ic= 70A nd 20 0 0 1 2 o c e r 3 t 4 No Ic= 35A 2 Ic= 17.5A 0 5 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=35A, Tj= 25C [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 10000 Cies Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] . de 6 1000 Coes 1000 25 800 20 600 15 400 10 200 5 Cres 100 0 0 5 10 15 20 25 30 35 0 100 200 Gate charge : Qg [ nC ] Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 300 0 400 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 60 6MBI35S-140 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg= 33ohm, Tj= 125C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg= 33ohm, Tj= 25C 1000 1000 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff ton tr 100 500 ton tr 100 tf tf 50 50 0 20 40 60 0 20 40 60 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=35A, VGE=15V, Tj= 25C [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg=33ohm 5000 14 Eon(125C) Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1000 toff ton 100 tr tf 50 10 8 n sig 50 o c e r 100 t ew 6 nd e mm 4 Eon(25C) Eoff(125C) Eoff(25C) Err(125C) 2 Err(25C) 0 500 0 20 Gate resistance : Rg [ohm] No . de 10 n r o f 500 40 60 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=35A, VGE=15V, Tj= 125C [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>33ohm, Tj=<125C 25 100 Eon 20 80 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 12 15 10 Eoff 5 60 40 20 Err 0 10 0 50 100 500 0 Gate resistance : Rg [ohm] 200 400 600 800 1000 1200 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1400 1600 6MBI35S-140 IGBT Module Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) Vcc=800V, VGE=15V, Rg=33ohm 80 300 Tj=25C Tj=125C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 60 40 20 trr(125C) 100 trr(25C) Irr(125C) Irr(25C) 0 10 0 1 2 3 4 0 10 Forward on voltage : VF [ V ] 20 30 40 50 60 Forward current : IF [ A ] Transient thermal resistance 3 FWD Thermal resistanse : Rth(j-c) [ C/W ] 1 IGBT . de n sig ew n for 0.1 0.01 0.001 0.01 nd e mm eco 0.1 1 M623 r Pulse width : Pw [ sec ] t No Outline Drawings, mm 107.51 930.3 4-o6.10.3 15.24 16.02 2-o5.50.3 15.24 15.24 15.24 17 13 o2.60.1 3 12 27.60.3 + 0.5 0 930.3 A 1.150.2 10.2 1.50.3 2.50.3 11.43 11.43 11.43 11.43 11.43 o0.4 6.50.5 3.50.5 171 20.51 mass : 180g Section A-A 12 1 3.81 16.02 o2.250.1 A 0.80.2 320.3 11 451 41.91 69.60.3 Shows theory dimensions http://store.iiic.cc/