MMO74-12io6 Thyristor VRRM = 1200 V I TAV = 40 A VT = 1.29 V AC Controlling 1~ full-controlled Part number MMO74-12io6 Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c MMO74-12io6 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25C 100 A 6 mA TVJ = 25C 1.29 V 1.61 V 1.29 V IT = 40 A IT = 80 A IT = 40 A IT = 80 A I RMS RMS forward current per phase 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125C TC = 95 C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV It min. 1.70 V T VJ = 150 C 40 A 88 A TVJ = 150 C 0.87 V 10.5 m 0.7 K/W 0.1 K/W TC = 25C 180 W t = 10 ms; (50 Hz), sine TVJ = 45C 600 A t = 8,3 ms; (60 Hz), sine VR = 0 V 650 A t = 10 ms; (50 Hz), sine TVJ = 150 C 510 A t = 8,3 ms; (60 Hz), sine VR = 0 V 550 A t = 10 ms; (50 Hz), sine TVJ = 45C 1.80 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 1.76 kAs t = 10 ms; (50 Hz), sine TVJ = 150 C 1.30 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 150 C 1.26 kAs 22 t P = 300 s pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 C; f = 50 Hz repetitive, IT = 120 A t P = 200 s; di G /dt = 0.3 A/s; (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 100 mA TVJ = -40 C 150 mA VGD gate non-trigger voltage TVJ = 150C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 C 450 mA IG = 0.3 A; V = VDRM non-repet., I T = 100 A/s 40 A 500 A/s 1000 V/s TVJ = 150C R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s IG = 0.3 A; di G /dt = 1.5 V 0.3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 100 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/s 20A; V = VDRM TVJ =125 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved 150 s 15 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c MMO74-12io6 Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 C -40 125 C 150 C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Logo XXXXX (R) yywwZ 1234 Date Code Location Ordering Standard Part Number UL Lot# Ordering Number MMO74-12io6 Equivalent Circuits for Simulation I V0 R0 Marking on Product MMO74-12io6 * on die level Delivery Mode Tube Code No. 459380 T VJ = 150C Thyristor V 0 max threshold voltage 0.87 V R0 max slope resistance * 9.7 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c MMO74-12io6 Outlines SOT-227B (minibloc) 2 3 1 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c MMO74-12io6 Thyristor 80 500 2000 50 Hz, 80% VRRM VR = 0 V 450 1600 60 TVJ = 45C 400 I2t ITSM IT 40 1200 350 [A s] [A] [A] 300 20 125C 150C 800 TVJ = 125C TVJ = 125C 250 400 TVJ = 25C 0 0,4 200 0,8 1,2 1,6 2,0 0,01 0,1 1 4 5 6 7 8 910 t [ms] 2 TVJ = 25C dc = 1 0.5 0.4 0.33 0.17 0.08 80 typ. 100 VG [V] 3 Fig. 3 I t versus time (1-10 ms) 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 3 1 2 Fig. 2 Surge overload current 1000 1: IGT, TVJ = 125C 1 t [s] VT [V] Fig. 1 Forward characteristics 10 TVJ = 45C 2 5 2 1 6 4 Limit 60 tgd IT(AV)M [s] [A] 40 10 20 4: PGAV = 0.5 W 0,1 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125C 1 10 100 1000 0 1 10 10000 IG [mA] Fig. 4 Gate trigger characteristics 100 0 1000 50 75 100 125 150 TC [C] IG [mA] Fig. 5 Gate controlled delay time 80 25 Fig. 6 Max. forward current at case temperature 0,8 dc = 1 0.5 0.4 0.33 0.17 0.08 60 P(AV) RthHA 0.4 0.6 0.8 1.0 2.0 4.0 40 0,6 ZthJC 0,4 [W] [K/W] 20 Rthi [K/W] 0.059 0.108 0.357 0.176 0,2 0 0 10 20 30 40 50 IT(AV) [A] 0 50 100 150 Tamb [C] (c) 2020 IXYS all rights reserved 101 102 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0,0 100 ti [s] 0.0006 0.017 0.104 0.450 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200120c