1/5
XP162A11C0PR-G
Power MOSFET
PRODUCTS PACKAGE ORDER UNIT
XP162A11C0PR SOT-89 1,000/Reel
XP162A11C0PR-G(*) SOT-89 1,000/Reel
PARAMETER SYMBOL
RA TINGS
UNITS
Drain-Source Voltage Vdss -30 V
Gate-Source Voltage Vgss ±20 V
Drain Current (DC) Id -2.5 A
Drain Current (Pulse) Idp -10 A
Reverse Drain Current Idr -2.5 A
Channel Power Dissipation *
Pd 2 W
Channel Temperature Tch 150 ℃
S torage Temperature Tstg -55~150 ℃
■GENERAL DESCRIPTION
The XP162A11C0PR-G is a P-channel Power MOSFET w ith low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package ma kes high density mounting possi ble.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance
:
Rds(on) = 0.15
Ω
@ Vgs = -10V
:
Rds(on) = 0.28
Ω
@ Vgs = -4.5V
Ultra High-Speed Switching
Driving Voltage : -4.5V
Gate Protect Diode Built-in
P-Channel Power MOSFET
DMOS Structure
Small Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/
MARKING ■PRODUCT NAME
■
A
BSOLUTE MAXIMUM RATINGS
■EQUIVALENT CIRCUIT Ta = 25℃
* When implemented on a ceramic PCB
ETR1125_003
G : Gate
S : Source
D : Drain
2 1
1 x
* x represents production lot number.
(*)
The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS complia nt.
2/5
XP162A11C0PR-G
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Drain Cut-Off Current Idss Vds= -30V, Vgs= 0V - - -10 μA
Gate-Source Leak Current Igss Vgs= ±20V, Vds= 0V - - ±10 μA
Gate-Source Cut-Off Voltage Vgs(off) Id= -1mA, Vds= -10V -1.0 - -2.5 V
Id= -1.5A, Vgs= -10V - 0.11 0.15 Ω
Drain-Source On-St ate Resistance*1
Rds(on) Id= -1.5A, Vgs= -4.5V - 0.20 0.28 Ω
Forward Transfer Admittance*1 | Yfs | Id= -1.5A, Vds= -10V - 2.5 - S
Body Drain Diode
Forward Voltage Vf If= -2.5A, Vgs= 0V - -0.85 -1.1 V
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Input Capacitance Ciss - 280 - pF
Output Capacit ance Coss - 200 - pF
Feedback Cap acitance Crss
Vds= -10V, Vgs =0V
f= 1MHz - 90 - pF
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
T urn-On Delay Time td (on) - 10 - ns
Rise T ime tr - 30 - ns
T urn-Off Delay T ime td (off) - 20 - ns
Fall Time tf
Vgs= -5V, Id= -1.5A
Vdd= -10V
- 35 - ns
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Thermal Resist ance
(Channel-Ambience) Rth (ch-a) Implement on a ceramic PCB - 62.5 - ℃/W
■ELECTRICAL CHARACTERISTICS
DC Characteristics Ta = 25℃
*1 Effective during pulse test.
Ta = 25℃
Ta = 25℃
Switching Characteristics
Thermal Characteristics
Dynamic Characteristics
3/5
XP162A11C0PR-G
■TYPICAL PERFORMANCE CHARACTERISTICS
4/5
XP162A11C0PR-G
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(11) Standardized transition Thermal Resistance vs. Pulse Width
5/5
XP162A11C0PR-G
1. The products and prod uct specifications cont ained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this catalog is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights ari sin g from the use of any information and circuitry in this catalog.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment e mploying products listed in this catalog.
4. The products in this cat alog are not developed, designed, or approv ed for use with such
equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this catalog within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our re presentatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this catalog may be copied or reproduced without the
prior permission of Torex Semiconductor Ltd.
