AUIRF1404
VDSS 40V
RDS(on) typ. 3.5m
max. 4.0m
ID (Silicon Limited) 202A
ID (Package Limited) 160A
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET® power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
1 2017-09-18
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 202
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 143
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 160
IDM Pulsed Drain Current 808
PD @TC = 25°C Maximum Power Dissipation 333 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 620
mJ
IAR Avalanche Current See Fig.15,16, 12a, 12b A
EAR Repetitive Avalanche Energy mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
dv/dt Peak Diode Recovery dv/dt 1.5 V/ns
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.45
°C/W
RCS Case-to-Sink, Flat, Greased Surface 0.50 –––
RJA Junction-to-Ambient ––– 62
TO-220AB
AUIRF1404
S
D
G
Base part number Package Type Standard Pack
Form Quantity
AUIRF1404 TO-220 Tube 50 AUIRF1404
Orderable Part Number
G D S
Gate Drain Source
HEXFET® Power MOSFET
AUIRF1404
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Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
starting TJ = 25°C, L = 85H, RG = 25, IAS = 121A, VGS =10V. (See fig. 12)
I
SD 121A, di/dt 130A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A.
R is measured at TJ of approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.039 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.5 4.0 m VGS = 10V, ID = 121A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 76 ––– ––– S VDS = 25V, ID = 121A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =40 V, VGS = 0V
––– ––– 250 VDS =32V,VGS = 0V,TJ =150°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 131 196
nC
ID = 121A
Qgs Gate-to-Source Charge ––– 36 ––– VDS = 32V
Qgd Gate-to-Drain Charge ––– 37 56 VGS = 10V
td(on) Turn-On Delay Time ––– 17 –––
ns
VDD = 20V
tr Rise Time ––– 190 ––– ID = 121A
td(off) Turn-Off Delay Time ––– 46 ––– RG= 2.5
tf Fall Time ––– 33 ––– RD = 0.2
LD Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 5669 –––
pF
VGS = 0V
Coss Output Capacitance ––– 1659 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 223 ––– ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 6205 ––– VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
Coss Output Capacitance ––– 1467 ––– VGS = 0V, VDS = 32V ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 2249 ––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 202
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 808 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C,IS = 121A,VGS = 0V
trr Reverse Recovery Time ––– 78 117 ns TJ = 25°C ,IF = 121A
Qrr Reverse Recovery Charge ––– 163 245 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
AUIRF1404
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Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
4 5 6 7 8 9 10 11 12
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
202A
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4 2017-09-18
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs
+ C
gd, C
ds
SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
050 100 150 200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
121A
V = 20V
DS
V = 32V
DS
0.1
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
1
10
100
1000
10000
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
AUIRF1404
5 2017-09-18
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
50
100
150
200
250
ID, Drain Current (A)
Limited By Package
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF1404
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Fig 14. Threshold Voltage vs. Temperature
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
25 50 75 100 125 150 175
0
300
600
900
1200
1500
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
49A
101A
121A
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
-VGS(th) Gate threshold Voltage (V)
ID = -250µA
AUIRF1404
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Fig 15. Typical Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 15, 16).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 121A
AUIRF1404
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
AUIRF1404
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TO-220AB package is not recommended for Surface Mount Application.
TO-220AB Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRF1404
Lot Code
Part Number
IR Logo
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
AUIRF1404
10 2017-09-18
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level TO-220AB N/A
ESD
Machine Model Class M4 (+/- 425V)†
AEC-Q101-002
Human Body Model Class H2 (+/- 4000V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 1125V)†
AEC-Q101-005
RoHS Compliant Yes
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
9/30/2015
Updated datasheet with corporate template.
Corrected typo on IDSS test condition on page 2.
Updated Package outline on page 9.
9/18/2017 Corrected typo error on part marking on page 9.
† Highest passing voltage.
