AUTOMOTIVE GRADE AUIRF1404 Features Advanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET VDSS Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number Package Type AUIRF1404 TO-220 40V RDS(on) typ. max. ID (Silicon Limited) 4.0m 202A ID (Package Limited) 160A S D G TO-220AB AUIRF1404 G Gate D Drain Standard Pack Form Tube 3.5m S Source Orderable Part Number Quantity 50 AUIRF1404 Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 143 160 IDM PD @TC = 25C Pulsed Drain Current Maximum Power Dissipation 808 333 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol RJC RCS RJA Units 202 A W 2.2 20 620 See Fig.15,16, 12a, 12b 1.5 -55 to + 175 W/C V mJ A mJ V/ns C 300 10 lbf*in (1.1N*m) Parameter Typ. Max. Units Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient --- 0.50 --- 0.45 --- 62 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-09-18 AUIRF1404 Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 40 --- --- V VGS = 0V, ID = 250A --- 0.039 --- V/C Reference to 25C, ID = 1mA --- 3.5 4.0 m VGS = 10V, ID = 121A 2.0 --- 4.0 V VDS = VGS, ID = 250A 76 --- --- S VDS = 25V, ID = 121A --- --- 20 VDS =40 V, VGS = 0V A --- --- 250 VDS =32V,VGS = 0V,TJ =150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- 131 36 37 17 190 46 33 196 --- 56 --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- --- --- --- --- --- --- 5669 1659 223 6205 1467 2249 --- --- --- --- --- --- Min. Typ. Max. Units --- --- 202 --- --- 808 --- --- --- --- 78 163 1.5 117 245 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Output Capacitance Effective Output Capacitance Coss eff. Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge Forward Turn-On Time ton ID = 121A nC VDS = 32V VGS = 10V VDD = 20V ID = 121A ns RG= 2.5 RD = 0.2 Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 pF VGS = 0V, VDS = 1.0V = 1.0MHz VGS = 0V, VDS = 32V = 1.0MHz VGS = 0V, VDS = 0V to 32V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 121A,VGS = 0V ns TJ = 25C ,IF = 121A nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) starting TJ = 25C, L = 85H, RG = 25, IAS = 121A, VGS =10V. (See fig. 12) ISD 121A, di/dt 130A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A. R is measured at TJ of approximately 90C. 2 2017-09-18 AUIRF1404 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) 100 100 10 4.5V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 4.5V 10 TJ = 25 C TJ = 175 C 100 V DS = 25V 20s PULSE WIDTH 6 7 8 9 10 11 12 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 10 100 Fig. 2 Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) 1000 5 1 VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 4 20s PULSE WIDTH TJ = 175 C 1 0.1 100 VDS, Drain-to-Source Voltage (V) 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 2.5 ID = 202A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig. 4 Normalized On-Resistance vs. Temperature 2017-09-18 AUIRF1404 10000 VGS, Gate-to-Source Voltage (V) Crss = Cgd Coss = Cds + Cgd 8000 C, Capacitance(pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Ciss 6000 4000 Coss 2000 Crss ID = 121A V DS= 32V V DS= 20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 0 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 200 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 C 1000 ID , Drain Current (A) ISD , Reverse Drain Current (A) 150 10000 100 10 TJ = 25 C 1 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 VSD ,Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 100 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 0.1 0.0 50 QG , Total Gate Charge (nC) 3.5 10us 100us 100 1ms 10ms 10 1 TC = 25 C TJ = 175 C Single Pulse 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2017-09-18 AUIRF1404 250 Limited By Package ID, Drain Current (A) 200 150 Fig 10a. Switching Time Test Circuit 100 50 0 25 50 75 100 125 150 175 T C , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 0.001 0.00001 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-09-18 AUIRF1404 15V DRIVER L VDS EAS , Single Pulse Avalanche Energy (mJ) 1500 1200 D.U.T RG + V - DD IAS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp ID 49A 101A 121A TOP BOTTOM 900 600 300 0 25 50 75 100 125 150 Starting T J, Junction Temperature 175 ( C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform -V GS(th) Gate threshold Voltage (V) 4.0 3.0 ID = -250A 2.0 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit 6 2017-09-18 AUIRF1404 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs. Pulse width 400 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 121A EAR , Avalanche Energy (mJ) 350 300 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) 250 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) 175 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy vs. Temperature 7 2017-09-18 AUIRF1404 Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs 8 2017-09-18 AUIRF1404 TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information Part Number AUIRF1404 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code TO-220AB package is not recommended for Surface Mount Application. 9 2017-09-18 AUIRF1404 Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level TO-220AB N/A Class M4 (+/- 425V) AEC-Q101-002 Class H2 (+/- 4000V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Highest passing voltage. Revision History Date Comments 9/30/2015 Updated datasheet with corporate template. Corrected typo on IDSS test condition on page 2. Updated Package outline on page 9. 9/18/2017 Corrected typo error on part marking on page 9. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2017-09-18