Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB481Y-90
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Low current rectification
Features
1) Ultra small mold type. (EMD4)
2) Low VF
3) High reliability
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C) Symbol Unit
VRM V
VRV
Io mA
IFSM A
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit
Forward voltage VF- 0.55 0.61 V IF=100mA
IR- 20 100 μAVR=90V
Parameter
Reverse current
Conditions
Storage temperature 40 to 125
(*1) Rating of per diode
Forward current surge peak (60Hz・1cyc) (*1) 1
Junction temperature 125
Reverse voltage (DC) 90
Average rectified forward current (*1) 100
Parameter Limits
Reverse voltage (repetitive peak) 90
EMD4
0.5
0.45
1.0
1.55
1.65±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
φ0.8±0.1
5.5±0.2
1.65±0.1
0.65±0.1
0.3±0.1
0～0.1
1PIN
1.65±0.01
1.7±0.05
ROHM : EMD4
JEITA : SC-75A Size
dot (year week factory)
0.13±0.05
0.5±0.05
0～0.1
(1) (2)
(4) (3)
0.5
0.5
1.0±0.1
0.22±0.05
1.6±0.1
1.2±0.1
1.6±0.1
1.6±0.05
1.6±0.05
1/3 2011.05 - Rev.C
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB481Y-90
0
5
10
15
20
25
30
AVE:11.7ns
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(s)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
0.1
1
10
100
0 100 200 300 400 500 600
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
0.01
0.1
1
10
100
1000
10000
0 102030405060708090
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
1
10
100
0 5 10 15 20 25 30
530
540
550
560
570
580
AVE:552.0mV
Ta=25℃
IF=0.1A
n=30pcs
0
50
100
150
200
250
300
350
400
450
500
Ta=25℃
VR=90V
n=30pcs
AVE:29.31uA
20
21
22
23
24
25
26
27
28
29
30
AVE:21.69pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0
5
10
15
20
AVE:3.70A
8.3ms
Ifsm 1cyc
0
1
2
3
4
5
6
7
8
9
10
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
1
2
3
4
5
6
7
8
9
10
1 10 100
t
Ifsm
0
0.1
0.2
0 0.05 0.1 0.15 0.2 0.25 0.3
Per diode
f=1MHz
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA IF=100mA
300us
time
Mounted on epoxy board
DC
D=1/2
Sin(θ＝180)
2/3 2011.05 - Rev.C
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB481Y-90
0
0.1
0.2
0.3
0 25 50 75 100 125
Per diode
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0
0.2
0.4
0.6
0.8
1
0 20406080
Per diode
0
0.1
0.2
0.3
0 25 50 75 100 125
Per diode
D=1/2
Sin(θ＝180)
DC
D=1/2
Sin(θ＝180)
DC
D=1/2
DC
Sin(θ＝180)
T Tj=125℃
D=t/T
tVR
Io
VR=45V
0A
0V
T Tj=125℃
D=t/T
tVR
Io
VR=45V
0A
0V
3/3 2011.05 - Rev.C
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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