CPH3140 / CPH3240
No.7907-1/7
Features
• Adoption of FBIT, MBIT processes
• High breakdown voltage and large current capacity
• High-speed switching
• Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs
Specifi cations ( ): CPH3140
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)120 V
Collector-to-Emitter Voltage VCEO (--)100 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC(--)1 A
Collector Current (Pulse) ICP (--)2 A
Collector Dissipation PC
When mounted on ceramic substrate (600mm
2
×0.8mm)
0.9 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7015A-003
Ordering number : EN7907A
62712 TKIM/61504 TSIM TA-100899
SANYO Semiconductors
DATA SHEET
CPH3140 / CPH3240
http://semicon.sanyo.com/en/network
Product & Package Information
• Package : CPH3
• JEITA, JEDEC : SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
TL
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
2.9
0.05
0.4
2.8
1.6
0.2
0.6 0.6
0.9
0.2
0.15
21
3
0.95
3
2
1
3
2
1
CPH3240CPH3140
BB
LOT No.
DL
LOT No.
CPH3240CPH3140
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching
Applications
CPH3140-TL-E
CPH3240-TL-E
CPH3140 / CPH3240
No.7907-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)100V, IE=0A (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA
DC Current Gain hFE VCE=(--)5V, IC=(--)100mA 140 400
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)100mA 120 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (13)8.5 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)400mA, IB=(--)40mA (--0.2)0.1 (--0.6)0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)400mA, IB=(--)40mA (--)0.85 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)120 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)100 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V
Turn-On Time ton See specifi ed Test Circuit. (80)80 ns
Storage Time tstg (700)850 ns
Fall Time tf(40)50 ns
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
CPH3140-TL-E CPH3 3,000pcs./reel Pb Free
CPH3240-TL-E CPH3 3,000pcs./reel Pb Free
--1.0
--0.8
--0.6
--0.4
--0.5
--0.7
--0.9
--0.2
--0.1
--0.3
0
IC -- VCE
0 --1.0--0.5 --1.5 --2.0 --3.0--2.5 --3.5 --4.0 --4.5 --5.0
IB=0
IC -- VCE
CPH3140 CPH3240
--10mA
--20mA
--25mA
--5mA
--15mA
10mA
15mA
20mA
25mA
5mA
1mA
2mA
3mA
IB=0
--2mA
--3mA
--1mA
IT07232 IT07233
1.0
0.8
0.6
0.4
0.5
0.7
0.9
0.2
0.1
0.3
00 1.00.5 1.5 2.0 3.02.5 3.5 4.0 4.5 5.0
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
VRRB
--50V5V
++
50Ω
INPUT
OUTPU
T
RL
100μF 470μF
PW=20μsIB1
D.C.≤1% IB2
IC= --10IB1=10IB2= --400mA
CPH3140
VRRB
50V--5V
++
50Ω
INPUT
OUTPU
T
RL
100μF 470μF
PW=20μsIB1
D.C.≤1% IB2
IC=10IB1= --10IB2=400mA
CPH3240
CPH3140 / CPH3240
No.7907-3/7
Cob -- VCB
3
5
7
10
2
3
5
23 5
--1.0 7--10 23 57
--100
CPH3140
f=1MHz
Cob -- VCB CPH3240
f=1MHz
IT07240 IT07241
IT07236
IT07238
IT07237
IT07239
5
7
2
3
100
5hFE -- IC
Ta=75°C
--25°C
CPH3140
VCE= --5V
25°C
hFE -- IC
Ta=75°C
--25°C
CPH3240
VCE=5V
25°C
3
5
7
100
2
3fT -- ICfT -- IC
23 57 2
--0.01 --0.1 --1.0
23 57
--0.01 --0.1 --1.0
CPH3240
VCE=10V
3
5
7
100
2
3
5
7
2
0.01
CPH3140
VCE= --10V
23 57 23 57 2
0.1 1.0
23 57
23 57 2
3
5
7
100
2
3
23 57
0.01 0.1 1.0
23 57
2
3
5
7
10
2
3
5
23 5
1.0 710 23 57
100
Collector Current, IC -- A
DC Current Gain, hFE
Collector Current, IC -- A
DC Current Gain, hFE
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- A
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
--1.0
--0.8
--0.6
--0.4
--0.2
0
IC -- VBE
25°C
--25°C
Ta=75°C
IC -- VBE
1.0
0.8
0.6
0.4
0.2
0
IT07234 IT07235
0--0.2--0.1 --0.3 --0.5 --0.7 --0.9--0.4 --0.6 --0.8 --1.0 00.20.1 0.3 0.5 0.7 0.90.4 0.6 0.8 1.0
--25°C
25°C
Ta=75°C
CPH3240
VCE=5V
CPH3140
VCE= --5V
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
CPH3140 / CPH3240
No.7907-4/7
A S O 1.0
0.9
0.8
0.7
0.6
0.5
0.3
0.4
0.2
0.1
00 20 40 60 80 100 120 140 160
PC -- Ta
IT07246 IT07247
CPH3140 / CPH3240
VBE(sat) -- ICCPH3140
IC / IB=10
75°C
Ta= --25°C
VBE(sat) -- ICCPH3240
IC / IB=10
Ta= --25°C
75°C
IT07244 IT07245
3
2
7
--1.0
--0.01 23 57
--0.1 23 57
--1.0
5
3
20.10.01 23 57 1.0
23 57
25°C
25°C
3
2
7
1.0
5
3
2
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Ambient Temperature, T a -- °C
Collector Dissipation, PC -- W
Mounted on a ceramic board (600mm2
×
0.8mm)
100ms
DC operation
10ms
1ms
2
3
2
3
5
7
5
1.0
0.1
0.01
0.001 23 57 23 57 23 57
0.1 1.0 10 100 2
Dissipation Limited
S / B Limited
2
3
5
7
2
3
5
7
100μs
500μs
<10μs
CPH3140 / CPH3240
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2
×
0.8mm)
For PNP, minus sign is omitted
ICP=2A
IC=1A
VCE(sat) -- IC
--25°C
Ta=75°C
CPH3140
IC / IB=10
VCE(sat) -- ICCPH3240
IC / IB=10
IT07242 IT007243
5
3
2
7
--0.1
7
5
3
2
23 57 23 57
--0.1--0.01 2
--1.0
--0.01
5
3
2
7
5
3
2
0.1
0.01
25
°
C
--25°C
Ta=75°C
25
°
C
2 3 57 2 3 57
0.10.01 2
1.0
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
CPH3140 / CPH3240
No.7907-5/7
Embossed Taping Specifi cation
CPH3140-TL-E, CPH3240-TL-E
CPH3140 / CPH3240
No.7907-6/7
Outline Drawing Land Pattern Example
CPH3140-TL-E, CPH3240-TL-E
Mass (g) Unit
0.013
* For reference
mm Unit: mm
0.6
2.4
0.95 0.95
1.4
CPH3140 / CPH3240
PS No.7907-7/7
This catalog provides information as of June, 2012. Specifi cations and information herein are subject
to change without notice.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
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grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
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prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
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