CPH3140 / CPH3240 Ordering number : EN7907A SANYO Semiconductors DATA SHEET CPH3140 / CPH3240 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features * * * * Adoption of FBIT, MBIT processes High breakdown voltage and large current capacity High-speed switching Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs Specifications ( ): CPH3140 Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--)120 (--)100 V VEBO IC (--)6 V (--)1 A (--)2 A Collector Dissipation ICP PC 0.9 W Junction Temperature Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) When mounted on ceramic substrate (600mm2x0.8mm) V 150 C --55 to +150 C Package Dimensions Product & Package Information unit : mm (typ) 7015A-003 * Package : CPH3 * JEITA, JEDEC : SC-59, TO-236, SOT-23 * Minimum Packing Quantity : 3,000 pcs./reel 0.6 2.9 CPH3140-TL-E CPH3240-TL-E 0.15 Packing Type: TL Marking LOT No. DL LOT No. BB 0.05 1.6 2.8 0.2 3 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector CPH3140 CPH3240 Electrical Connection 3 3 SANYO : CPH3 1 CPH3140 1 2 CPH3240 2 http://semicon.sanyo.com/en/network 62712 TKIM/61504 TSIM TA-100899 No.7907-1/7 CPH3140 / CPH3240 Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current Ratings Conditions min typ Unit max ICBO IEBO VCB=(--)100V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)100mA Gain-Bandwidth Product hFE fT VCE=(--)10V, IC=(--)100mA 120 Output Capacitance Cob (13)8.5 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)400mA, IB=(--)40mA (--0.2)0.1 (--0.6)0.4 V IC=(--)400mA, IB=(--)40mA (--)0.85 (--)1.2 V Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 140 (--)100 nA (--)100 nA 400 MHz pF V(BR)CBO V(BR)CEO IC=(--)10A, IE=0A (--)120 V IC=(--)1mA, RBE= (--)100 V V(BR)EBO ton IE=(--)10A, IC=0A tstg tf See specified Test Circuit. (--)6 V (80)80 ns (700)850 ns (40)50 ns Switching Time Test Circuit IB1 PW=20s D.C.1% IB2 INPUT INPUT RB VR IB1 PW=20s D.C.1% OUTPUT OUTPUT IB2 RB VR RL 50 RL 50 + 470F + 100F 5V + 100F --50V + 470F --5V 50V IC= --10IB1=10IB2= --400mA IC=10IB1= --10IB2=400mA CPH3140 CPH3240 Ordering Information Package Shipping memo CPH3140-TL-E Device CPH3 3,000pcs./reel Pb Free CPH3240-TL-E CPH3 3,000pcs./reel Pb Free IC -- VCE CPH3140 A 5m Collector Current, IC -- A --0.9 A --2 0m mA 5 --1 0.8 25mA 20mA 15mA 0.7 10mA CPH3240 --1 0.9 --2 --0.8 IC -- VCE 1.0 0mA --0.7 --5mA --0.6 --0.5 --3mA --0.4 --0.3 --2mA --0.2 --1mA Collector Current, IC -- A --1.0 5mA 3mA 2mA 0.6 0.5 0.4 1mA 0.3 0.2 0.1 --0.1 IB=0 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Collector-to-Emitter Voltage, VCE -- V --4.5 --5.0 IT07232 IB=0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-to-Emitter Voltage, VCE -- V 5.0 IT07233 No.7907-2/7 CPH3140 / CPH3240 IC -- VBE --1.0 0.4 25C --25C 0.2 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Base-to-Emitter Voltage, VBE -- V 0 --1.0 0.3 25C --25C 100 0.6 0.7 0.8 Ta=75C 7 1.0 IT07235 25C 2 --25C 100 7 5 3 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 2 0.01 7 --1.0 2 IT07236 2 100 7 5 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 5 7 2 0.1 3 5 --1.0 IT07238 100 7 5 3 2 3 5 7 0.1 2 3 7 5 7 1.0 IT07239 Cob -- VCB CPH3240 f=1MHz Output Capacitance, Cob -- pF 10 5 Collector Current, IC -- A 5 2 2 1.0 IT07237 CPH3240 VCE=10V CPH3140 f=1MHz 3 7 f T -- IC 2 2 0.01 7 Cob -- VCB 5 3 3 Gain-Bandwidth Product, fT -- MHz CPH3140 VCE= --10V 2 Collector Current, IC -- A f T -- IC 3 Output Capacitance, Cob -- pF 0.9 CPH3240 VCE=5V 5 DC Current Gain, hFE Ta=75C 0.5 hFE -- IC 3 2 0.4 7 3 3 --0.01 0.2 Base-to-Emitter Voltage, VBE -- V CPH3140 VCE= --5V 5 --0.01 0.1 IT07234 hFE -- IC 5 DC Current Gain, hFE 0.6 --25C --0.4 25C --0.6 0.8 Ta=7 5C Collector Current, IC -- A --0.8 Ta=75C Collector Current, IC -- A CPH3240 VCE=5V --0.2 Gain-Bandwidth Product, fT -- MHz IC -- VBE 1.0 CPH3140 VCE= --5V 3 2 10 7 5 3 3 --1.0 2 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 --100 IT07240 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 100 IT07241 No.7907-3/7 CPH3140 / CPH3240 VCE(sat) -- IC 7 CPH3140 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --0.1 5C 7 Ta= 7 C --25 5C 5 2 3 2 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A Ta= --25C 7 25C 5 3 2 3 5 7 2 --0.1 3 5 Collector Current, IC -- A 1.0 7 5 1m IC=1A s ssi pa tio DC nL 10 era n d s S /B Li m 3 2 3 2 ite d CPH3140 / CPH3240 Ta=25C Single pulse Mounted on a ceramic board (600mm2x0.8mm) For PNP, minus sign is omitted 0.001 0.1 2 3 5 7 1.0 2 3 2 3 5 7 5 7 10 2 3 3 5 7 2 1.0 IT007243 VBE(sat) -- IC CPH3240 IC / IB=10 2 1.0 Ta= --25C 7 75C 25C 0.1 2 5 3 2 3 5 7 3 5 7 1.0 IT07245 PC -- Ta CPH3140 / CPH3240 M ou 0.8 nt 0.7 ed on ac er 0.6 am ic 0.5 bo ar d (6 00 0.4 m 0.3 m2 x0 . 8m m 0.2 ) 0.1 0 5 7 100 Collector-to-Emitter Voltage, VCE -- V 2 0.1 0.9 0m tio ite 0.1 7 5 ms 10 op im 2 Collector Current, IC -- A <10s Di C 2 5 3 1.0 ICP=2A 3 2 0.01 7 5 --1.0 IT07244 s 100 s 0 50 Collector Current, IC -- A 3 2 = Ta 5 2 0.01 7 ASO 5 C 75 C 5 --2 7 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 75C 0.1 3 CPH3140 IC / IB=10 --1.0 2 0.01 0.01 7 --1.0 2 IT07242 VBE(sat) -- IC 3 2 --0.01 CPH3240 IC / IB=10 3 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 VCE(sat) -- IC 5 2 IT07246 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT07247 No.7907-4/7 CPH3140 / CPH3240 Embossed Taping Specification CPH3140-TL-E, CPH3240-TL-E No.7907-5/7 CPH3140 / CPH3240 Outline Drawing CPH3140-TL-E, CPH3240-TL-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.7907-6/7 CPH3140 / CPH3240 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.7907-7/7