© Semiconductor Components Industries, LLC, 2016
November, 2017 − Rev. 10
1Publication Order Number:
ESD8472/D
ESD8472
ESD Protection Diode
Ultra−Low Capacitance
Micro−Packaged Diodes for ESD Protection
The ESD8472 is designed to protect voltage sensitive components
that require ultra-low capacitance from ESD and transient voltage
events. Excellent clamping capability, low capacitance, high
breakdown voltage, high linearity, low leakage, and fast response time
make these parts ideal for ESD protection on designs where board
space is at a premium. It has industry leading capacitance linearity
over voltage making it ideal for RF applications. This capacitance
linearity combined with the extremely small package and low
insertion loss makes this part well suited for use in antenna line
applications for wireless handsets and terminals.
Features
•Industry Leading Capacitance Linearity Over Voltage
•Ultra−Low Capacitance: 0.2 pF
•Insertion Loss: 0.030 dBm
•0201DNS Package: 0.60 mm x 0.30 mm
•Stand−off Voltage: 5.3 V
•Low Leakage: < 1 nA
•Low Dynamic Resistance: < 1 W
•1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged
•SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free and are RoHS Compliant
Typical Applications
•RF Signal ESD Protection
•RF Switching, PA, and Antenna ESD Protection
•Near Field Communications
•USB 2.0, USB 3.0
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
IEC 61000−4−2 Level 4 (Contact) (Note 1)
IEC 61000−4−2 Level 4 (Air) (Note 1)
ESD ±20
±20
kV
Maximum Peak Pulse Current
IEC 61000−4−5 8/20 ms (Lightning) (Note 2)
IPP 3.0 A
Total Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
°PD°
RqJA
300
400
mW
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to
+150
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−2 waveform.
2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.
3. Mounted with recommended minimum pad size, DC board FR−4
Device Package Shipping†
ORDERING INFORMATION
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ESD8472MUT5G X3DFN2
(Pb−Free)
10000 / Tape &
Reel
MARKING
DIAGRAM
X3DFN2
CASE 152AF
PIN 1
4 = Specific Device Code
M = Date Code
4 M
SZESD8472MUT5G X3DFN2
(Pb−Free)
15000 / Tape &
Reel
ESD8472
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Bi−Directional
IPP
IPP
V
I
IR
IT
IT
IR
VRWM
VCVBR
VRWM VC
VBR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Reverse Working Voltage VRWM 5.3 V
Breakdown Voltage VBR IT = 1 mA (Note 4) 7.0 12 V
Reverse Leakage Current IRVRWM = 5.3 V < 1 50 nA
Clamping Voltage VCIPP = 1 A (Note 5) 11 15 V
Clamping Voltage VCIPP = 3 A (Note 5) 14 20 V
ESD Clamping Voltage VCPer IEC61000−4−2See Figures 1 and 2
Junction Capacitance CJVR = 0 V, f = 1 MHz
VR = 0 V, f = 1 GHz
0.20
0.15
0.30
0.30
pF
Dynamic Resistance RDYN TLP Pulse 1W
Insertion Loss f = 1 MHz
f = 8.5 GHz
0.050
0.250
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
5. Non−repetitive current pulse at 25°C, per IEC61000−4−5 waveform (Figure 9).
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
ESD8472
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3
TYPICAL CHARACTERISTICS
Figure 3. IV Characteristics Figure 4. CV Characteristics
Figure 5. RF Insertion Loss Figure 6. Capacitance over Frequency
Figure 7. Positive TLP I−V Curve Figure 8. Negative TLP I−V Curve
VOLTAGE (V) VOLTAGE (V)
0 5 10 15 20 25 30
0
2
4
6
8
10
12
14
16
18
20
CURRENT (A)
−30 −25 −20 −15 −10 −50
−20
−18
−16
−14
−12
−10
−8
−6
−4
−2
0
CURRENT (A)
X3DFN2, 0.62x0.32, 0.355P, (0201)
CASE 152AF
ISSUE A
DATE 17 FEB 2015
SCALE 8:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A B
E
D
BOTTOM VIEW
b
e
2X
L22X
TOP VIEW
2X
A
A1
0.05 C
0.05 C
CSEATING
PLANE
SIDE VIEW
DIM MIN MAX
MILLIMETERS
A0.25 0.33
A1 −−− 0.05
b0.22 0.28
e0.355 BSC
L2 0.17 0.23
MOUNTING FOOTPRINT*
DIMENSIONS: MILLIMETERS
0.74
1
0.30
0.31
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
2
1
GENERIC
MARKING DIAGRAM*
PIN 1
X = Specific Device Code
M = Date Code
XM
See Application Note AND8398/D for more mounting details
A
M
0.05 BC
A
M
0.05 BC
2X
2X
RECOMMENDED
PIN 1
INDICATOR
(OPTIONAL)
D0.58 0.66
E0.28 0.36
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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X3DFN2, 0.62X0.32, 0.355P, (0201)
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