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tm
©2008 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGL40N120AND Rev. A2
FGL40N120AND 1200V NPT IGBT
February 2008
FGL40N120AND
1200V NPT IGBT
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 75ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
Description
Employing NPT technology, Fairchild’s AND series of IGBTs
provides low conduction and switching losses. The AND series
offers an solution for application such as induction heating (IH),
motor control, general purpose inverters and uninterruptible
power supplies (UPS).
Absolute Maximum Ratings
Notes:
(1) Pulse width limit ed by max. junction temperature
Thermal Characteristics
GC E TO-264
C
G
E
Symbol Parameter FGL40N120AND Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±25 V
ICCollector Current @TC = 25°C64 A
Collector Current @TC = 100°C40 A
ICM(1) Pulsed Collector Current 160 A
IFDiode Continuous Forward Current @TC = 100°C40 A
IFM Diode Maximum Forward Current 240 A
PDMaximum Power Dissipation @TC = 25°C 500 W
Maximum Power Dissipation @TC = 100°C 200 W
SCWT Short Circuit Withstand Time,
VCE = 600V, VGE = 15V, TC = 125°C10 µs
TJOperating Junction Temperature -55 to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.25 °C/W
RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 0.7 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W
2www.fairchildsemi.com
FGL40N120AND Rev. A2
FGL40N120AND 1200V NPT IGBT
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FGL40N120AND FGL40N120AND TO-264 - - 25
Symbol Parameter Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V
BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-O ff Current VCE = VCES, VGE = 0V -- -- 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±250 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE 3.5 5.5 7.5 V
VCE(sat) Collector to Emitter
Saturation Voltage
IC = 40A, VGE = 15V -- 2.6 3.2 V
IC = 40A, VGE = 15V,
TC = 125°C-- 2.9 -- V
IC = 64A, VGE = 15V -- 3.15 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V
f = 1MHz
-- 3200 -- pF
Coes Output Capacitance -- 370 -- pF
cres Reverse Transfer Capacitance -- 125 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 600V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 15 -- ns
trRise Time -- 20 -- ns
td(off) Turn-Off Delay Time -- 110 -- ns
tfFall Time -- 40 80 ns
Eon Turn-On Switching Loss -- 2.3 3.45 mJ
Eoff Turn-Off Switching Loss -- 1.1 1.65 mJ
Ets Total Switching Loss -- 3.4 5.1 mJ
td(on) Turn-On Delay Time
VCC = 600V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 20 -- ns
trRise Time -- 25 -- ns
td(off) Turn-Off Delay Time -- 120 -- ns
tfFall Time -- 45 -- ns
Eon Turn-On Switching Loss -- 2.5 -- mJ
Eoff Turn-Off Switching Loss -- 1.8 -- mJ
Ets Total Switching Loss -- 4.3 -- mJ
QgTotal Gate charge VCE = 600V, IC = 40A,
VGE = 15V
-- 220 330 nC
Qge Gate-Emitter Charge -- 25 38 nC
Qgc Gate-Collector Charge -- 130 195 nC
3www.fairchildsemi.com
FGL40N120AND Rev. A2
FGL40N120AND 1200V NPT IGBT
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward Voltage IF = 40A TC = 25°C--3.24.0V
TC = 125°C-- 2.7 --
trr Diode Reverse Recovery Time
IF = 40A,
di/dt = 200A/µs
TC = 25°C--75112nS
TC = 125°C -- 130 --
Irr Diode Peak Reverse Recovery
Current TC = 25°C-- 812 A
TC = 125°C-- 13 --
Qrr Diode Reverse Recovery Charge TC = 25°C -- 300 450 nC
TC = 125°C -- 845 --
4www.fairchildsemi.com
FGL40N120AND Rev. A2
FGL40N120AND 1200V NPT IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage
Characteristics
Figure 3. Saturation Voltage vs. Case Figure 4. Load Current vs. Frequency
Temperature at Variant Current Level
Figure 5. Saturatio n Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
0246810
0
50
100
150
200
250
300 20V17V15V
12V
VGE = 10V
TC = 25°C
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V] 0246
0
30
60
90
120
150 Common Emitter
VGE = 15V
TC = 25°C
TC = 125°C
Collector Current, IC [A]
Collector-Em itter Vol tag e, VCE [V]
25 50 75 100 125
1
2
3
4
5
80A
Common Em i tter
VGE = 15V
40A
IC = 20A
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC [°C]
0.1 1 10 100 1000
0
10
20
30
40
50
60
70
80 VCC = 600V
Load Current : peak of square wave
Duty cycle : 50%
TC = 100°C
Power Dissipation = 100W
Load Current [A]
Frequ e ncy [k Hz ]
048121620
0
4
8
12
16
20
80A
40A
Common Emitter
TC = 125°C
IC = 20A
Collector-Emit te r Volt age, VCE [V]
Gate-Emitter Voltag e, VGE [V]
048121620
0
4
8
12
16
20
80A
40A
Common Emitter
TC = 25°C
IC = 20A
Collector-Emit te r Volt age, VCE [V]
Gate-Emitter Voltag e, VGE [V]
5www.fairchildsemi.com
FGL40N120AND Rev. A2
FGL40N120AND 1200V NPT IGBT
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate
Resistance
Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance
Gate Resistance
Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.
Collector Current Collector Current
0 10203040506070
10
100
Common Emitter
VCC = 600V, VGE = ±15V
IC = 40A
TC = 25°C
TC = 125°C
td(on)
tr
Switching Time [ns]
Gate Resistance, RG [Ω]
110
0
1000
2000
3000
4000
5000
6000
Ciss
Coss
Common Emitter
VGE = 0V, f = 1MHz
TC = 25°C
Crss
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
0 10203040506070
10
100
1000
Common Emitter
VCC = 600V, VGE = ±15V, IC = 40A
TC = 25°C
TC = 125°C td(off)
tf
Switching Time [ns]
Gate Res ist an ce , RG [Ω]
0 10203040506070
1
10
Common Emitter
VCC = 600V, VGE = ±15V
IC = 40A
TC = 25°C
TC = 125°C
Eon
Eoff
Switching Loss [mJ]
Gate Resistan ce, RG [Ω]
20 30 40 50 60 70 80
10
100
Common Emitter
VGE = ±15V, RG = 5Ω
TC = 25°C
TC = 125°C tr
td(on)
Switching Time [ns]
Collector Current, I C [A]
20 30 40 50 60 70 80
100
Common Emitter
VGE = ±15V, RG = 5Ω
TC = 25°C
TC = 125°C td(off)
tf
Switching Time [ns]
Collector Current, I C [A]
6www.fairchildsemi.com
FGL40N120AND Rev. A2
FGL40N120AND 1200V NPT IGBT
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs . Collector Current Figure 14. Gate Charge Characteristics
Figure 15. SOA Characteristics Figure 16. Turn-Off SOA
Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current
20 30 40 50 60 70 80
0.1
1
10
Common Emitter
VGE = ±15V, RG = 5 Ω
TC = 25°C
TC = 125°C Eon
Eoff
Switching Loss [mJ]
Collec tor Cu rre n t, I C [A]
0 50 100 150 200 250
0
2
4
6
8
10
12
14
16
600V
400V
Common Emitter
RL = 15Ω
TC = 25°CVcc = 200V
Gate-Emitter Voltage, VGE [V]
Gate Charge, Qg [n C]
1 10 100 1000
1
10
100
Safe Operating Area
VGE = 15V, TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0.1 1 10 100 1000
0.01
0.1
1
10
100 50µs
100µs
1ms
DC Operation
Ic MAX (Pul sed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
Collector Current, Ic [A]
Collector - Emitter Voltage, VCE [V]
0 10203040506070
0
2
4
6
8
10
di/dt = 100A/µs
di/dt = 200A/µs
Reverse Recovery Currnet , Irr [A]
Forward Curren t , IF [A]
0123456
0.1
1
10
100
TC = 125oC
TC = 25oC
TJ = 25oC
TJ = 125oC
Forward Current , IF [A]
Forwar d Volt ag e , VF [V]
7www.fairchildsemi.com
FGL40N120AND Rev. A2
FGL40N120AND 1200V NPT IGBT
Typical Performance Characteristics (Continued)
Figure 19. Stored Charge Figure 20. Reverse Recovery Time
Figure 21. Transient Thermal Impedance of IGBT
0 10203040506070
0
100
200
300
400
di/dt = 100A/µs
di/dt = 200A/µs
Stored Recovery Charge , Qrr [nC]
Forward Curren t , I F [A]
0 10203040506070
50
60
70
80
90
100
di/dt = 100A/µs
di/dt = 200A/µs
Reverse Recovery Time , trr [ns]
Forward Curren t , I F [A]
1E-5 1E-4 1E-3 0.01 0.1 1 10
1E-3
0.01
0.1
1
0.1
0.5
0.2
0.05
0.02
0.01 single pulse
Thermal Response [Zthjc]
Rectang ular Pulse Du ratio n [s ec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
8www.fairchildsemi.com
FGL40N120AND Rev. A2
FGL40N120AND 1200V NPT IGBT
Mechanical Dimensions
5.45TYP
[5.45 ±0.30]5.45TYP
[5.45 ±0.30]
4.90 ±0.20
20.00 ±0.20
(8.30) (8.30) (1.00)
(0.50)
(2.00)
(7.00)
(R1.00)
(R2.00)
ø3.30 ±0.20
(7.00)
(1.50)
(1.50) (1.50)
2.50 ±0.20 3.00 ±0.20
2.80 ±0.30
1.00 +0.25
–0.10
0.60 +0.25
–0.10
1.50 ±0.20
6.00 ±0.20
20.00 ±0.20
20.00 ±0.50
5.00 ±0.20
3.50 ±0.20
2.50 ±0.10
(9.00)
(9.00)
(2.00)
(1.50)
(0.15)
(2.80) (4.00)
(11.00)
TO-264
Dimensions in Millimeters
9www.fairchildsemi.com
FGL40N120AND Rev. A2
FGL40N120AND 1200V NPT IGBT
Rev. I33
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