2009-01-26
1
BAR90-081LS
Silicon Trench PIN Diode Array
• Optimized for low bias current antenna
switches in hand held applications
• Very low capacitance at zero volt
reverse bias at frequencies
above 1GHz (typ. 0.19 pF)
• Low forward resistance
(typ. 1.3 Ω @ IF = 3 mA)
• Improved ON / OFF mode harmonic
distortion balance
• Very small form factor: 1.34 x 0.74 x 0.31 mm³
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BAR90-081LS
1234
5678
Type Package Configuration LS(nH) Marking
BAR90-081LS TSSLP-8-1 quad array 0.2 WM
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR80 V
Forward current IF100 mA
Total power dissipation
TS ≤ 137 °C
Ptot 150 mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 125
Storage temperature Tstg -55 ... 150
2009-01-26
2
BAR90-081LS
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 90 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA
V(BR) 80 - - V
Reverse current
VR = 60 V
IR- - 50 nA
Forward voltage
IF = 3 mA
IF = 100 mA
VF
0.75
-
0.81
0.9
0.87
1
V
1For calculation of RthJA please refer to Application Note Thermal Resistance
2009-01-26
3
BAR90-081LS
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
CT
-
-
-
-
0.25
0.3
0.19
0.18
0.35
-
-
-
pF
Reverse parallel resistance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
RP
-
-
-
35
5
4
-
-
-
kΩ
Forward resistance
IF = 1 mA, f = 100 MHz
IF = 3 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
-
2
1.3
0.8
-
2.3
-
Ω
Charge carrier life time
IF = 10 mA, measured at IR = 3 mA, IR = 6 mA,
RL = 100 Ω
τ rr - 750 - ns
I-region width WI- 20 - µm
Insertion loss1)
IF = 1 mA, f = 1.8 GHz
IF = 3 mA, f = 1.8 GHz
IF = 10 mA, f = 1.8 GHz
IL
-
-
-
0.16
0.11
0.08
-
-
-
dB
Isolation1)
VR = 0 V, f = 0.9 GHz
VR = 0 V, f = 1.8 GHz
VR = 0 V, f = 2.45 GHz
ISO
-
-
-
18.5
13.5
11.5
-
-
-
1Single BAR90 diode in series configuration, Z = 50 Ω
2009-01-26
4
BAR90-081LS
Diode capacitance CT = ƒ (VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
0.1
0.15
0.2
0.25
0.3
0.35
0.4
pF
0.5
CT
1 MHz
100 MHz
1 GHz
1.8 GHz
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
-1
10
0
10
1
10
2
10
3
10
4
10
KOhm
Rp
100 MHz
1 GHz
1.8 GHz
Forward resistance rf = ƒ (IF)
f = 100 MHz
10 -1 10 0 10 1 10 2
mA
IF
-1
10
0
10
1
10
Ohm
rf
Forward current IF = ƒ (VF)
TA = Parameter
0.2 0.4 0.6 0.8 V1.2
VF
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
A
IF
-40°C
+25 °C
+85 °C
+125 °C
2009-01-26
5
BAR90-081LS
Forward current IF = ƒ (TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Permissible Puls Load RthJS = ƒ (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
IFmax/IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2009-01-26
6
BAR90-081LS
Insertion loss |S21|2 = ƒ(f)
IF = Parameter
Single BAR90 diode in series configuration, Z = 50Ω
01234GHz 6
f
-0.4
-0.35
-0.3
-0.25
-0.2
-0.15
-0.1
dB
0
|S21|²
10mA
3mA
1mA
0.5mA
Isolation |S21|2 = ƒ(f)
VR = Parameter
Single BAR90 diode in series configuration, Z = 50Ω
01234GHz 6
f
-30
-25
-20
-15
-10
dB
0
|S21|²
0 V
1 V
10 V
2009-01-26
7
BAR90-081LS
Package TSSLP-8-1
2009-01-26
8
BAR90-081LS
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.