Three Phase Rectifier Bridges PSD 75 IdAVM = 95 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 75/08 PSD 75/12 PSD 75/14 PSD 75/16 PSD 75/18 Symbol Test Conditions IdAV IFSM T C = 85C, module i2 dt T VJ T VJM T stg VISOL Md W eight Maximum Ratings 95 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1100 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 850 1000 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 5000 A2 s A2 s T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4000 4100 A2 s A2 s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 5 5 225 Nm Nm g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM Characteristic Value VF VTO rT RthJC IF = 150 A T VJ = 25C 0.3 8.0 mA mA 1.6 V 0.8 6 V m per Diode; DC current per module 1.28 0.213 K/W K/W RthJK per Diode; DC current per module 1.38 0.23 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 14 14 50 mm mm m/s2 For power-loss calculations only T VJ = T VJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net PSD 75 10 IF(OV) -----IFSM 200 IFSM (A) TVJ=45C TVJ=150C A 1.6 160 T=150C 1000 4 2 As 850 1.4 120 TVJ=45C 1.2 80 1 TVJ=150C 0 VRRM 0.8 40 IF 0 1/2 VRRM T=25C 1 VRRM 0.6 VF 1 10 1.5 V 0.4 100 Fig. 1 Forward current versus voltage drop per diode 101 t[ms] 102 1 2 103 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 85 300 [W] PSD 75 TC 0.2 0.12 250 90 = RTHCA [K/W] 95 0.29 100 105 200 0.45 100 DC sin.180 rec.120 rec.60 rec.30 [A] 80 110 115 150 60 120 0.79 100 DC sin.180 rec.120 rec.60 rec.30 50 PVTOT 0 3 125 130 1.79 135 20 140 IdAV 145 0 C 150 25 IFAVM 75 0 [A] Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 2 K/W Z thJK Z thJC 1.5 1 0.5 Z th 0.01 0.1 40 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated 50 100 150 200 TC(C) Fig.5 Maximum forward current at case temperature