Oct.-25-'07
DATE NAME
DRAWN
CHECKED
APPROVED
DWG.NO.
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
Date :
H04-004-05
FMA19N60E
MS5F06943
MS5F06943
1/15
Power MOSFET
October-25-2007
CHECKED
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd.
Oct.-25-'07
Oct.-25-'07
DWG.NO.
H04-004-03
MS5F06943
2/15
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
Revised Records
Date Classification
Index
Content Drawn
Checked Checked Approved
enactment
Oct.-25
2007
DWG.NO.
H04-004-03
MS5F06943
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This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
1.Scope This specifies Fuji Power MOSFET FMA19N60E
2.Construction N-Channel enhancement mode power MOSFET
3.Applications for Switching
4.Outview TO-220F Outview See to 11/15 page
5.Absolute Maximum Ratings at Tc=25
C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
VDS 600 V
VDSX 600 V VGS=-30V
Continuous Drain Current ID19 A
Pulsed Drain Current IDP 76 A
Gate-Source Voltage VGS 30 V
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Peak Diode Recovery dV/dt dV/dt kV/μs
Peak Diode Recovery -di/dt -di/dt A/μs
Ta=25
130 Tc=25
Operating and Storage Tch 150
Temperature range Tstg -55 to +150
Isolation Voltage VISO 2 kVrms t=60sec,f=60Hz
6.Electrical Characteristics at Tc=25
C (unless otherwise specified)
Static Ratings
Description Symbol Conditions min. typ. max. Unit
Drain-Source ID=250μA
Breakdown Voltage BVDSS VGS=0V 600 - - V
Gate Threshold ID=250μA
Voltage VGS(th) VDS=VGS 2.5 3.0 3.5 V
Zero Gate Voltage VDS=600V
VGS=0V Tch=25- - 25
Drain Current IDSS VDS=480V
VGS=0V Tch=125- - 250
Gate-Source VGS=
30V
Leakage Current IGSS VDS=0V - 10 100 nA
Drain-Source ID=9.5A
On-State Resistance RDS(on) VGS=10V - 0.31 0.365 Ω
μA
IAR 19 A Note *1
EAS 799
mJ Note *3
Note *5
Note *4
Note *2mJ
100
13
PD2.16 W
Drain-Source Voltage
6.5
EAR
Maximum Power Dissipation
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
Dynamic Ratings
Description Symbol Conditions min. typ. max. Unit
Forward ID=9.5A
Transconductance gfs VDS=25V 13 26 - S
Input Capacitance Ciss VDS=25V - 3600 5400
Output Capacitance Coss VGS=0V - 310 465
Reverse Transfer f=1MHz - 23 35 pF
Capacitance Crss
td(on) Vcc=300V ID=9.5A - 26 39
Turn-On Time tr VGS=10V RGS=8.2Ω- 13 20
td(off) See Fig.3 and Fig.4 - 150 225 ns
Turn-Off Time tf - 20 30
Total Gate Charge QGVcc=300V ID=19A - 105 160
Gate-Source Charge QGS VGS=10V - 23 35 nC
Gate-Drain Charge QGD See Fig.5 - 30 45
Reverse Diode
Description Symbol Conditions min. typ. max. Unit
Avalanche Capability L=1.71mH Tch=25
IAV See Fig.1 and Fig.2 19 - - A
Diode Forward IF=19A
On-Voltage VSD VGS=0V Tch=25- 0.90 1.35 V
Reverse Recovery IF=19A VGS=0V
Time trr -di/dt=100A/μs, Tch=25℃ - 0.6 - μs
Reverse Recovery See Fig.6
Charge Qrr - 10 - μC
7.Thermal Resistance
Description Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) 0.96 /W
Channel to Ambient Rth(ch-a) 58.0 /W
Note *1 : Tch
150, See Fig.1 and Fig.2
Note *2 : Stating Tch=25, IAS=8A, L=22.9mH, Vcc=60V, RG=50Ω, See Fig.1 and Fig.2
E
AS
limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph of page 9/15.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph of page 9/15.
Note *4 : IF
-ID, -di/dt=100A/μs, Vcc
BVDSS, Tch
150.
Note *5 : IF
-ID, dv/dt
5.0kV/μs, Vcc
BVDSS, Tch
150.
DWG.NO.
H04-004-03
MS5F06943
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
8.Reliability test items
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104
standards.
Test items required without fail
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 Terminal Pull force
Strength TO-220,TO-220F : 10N EIAJ
(Tensile) TO-3P,TO-3PF,TO-247 : 25N ED4701/400 15
TO-3PL : 45N method 401
T-Pack,K-Pack : 10N
Force maintaining duration :30±5sec
2 Terminal Load force
Strength TO-220,TO-220F : 5N EIAJ
(Bending) TO-3P,TO-3PF,TO-247 : 10N ED4701/400 15
TO-3PL : 15N method 401
T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
3 Mounting Screwing torque value: (M3) EIAJ (0:1)
Strength TO-220,TO-220F : 40±10Ncm ED4701/400 15
TO-3P,TO-3PF,TO-247 : 50±10N
cm
method 402
TO-3PL : 710N
cm
4 Vibration frequency : 100Hz to 2kHz EIAJ
Acceleration : 200m/s
2
ED4701/400 15
Sweeping time : 4min. method 403
48min. for each X,Y&Z directions.
5 Shock
2
EIAJ
Duration time : 0.5ms ED4701/400 15
3times for each X,Y&Z directions. method 404
6 Solderability Solder temp. : 245±5°C
Immersion time : 0.5sec
Each terminal shall be immersed in ----- 15
the solder bath within 1 to 1.5mm from
the body.
7 Resistance to Solder temp. : 260±5°C EIAJ
Soldering Heat Immersion time : 10±1sec ED4701/300 15
Number of times : 1times method 302
Mechanical test methodsMechanical test methods
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
Failure Criteria Symbols Unit
Lower Limit Upper Limit
Breakdown Voltage BVDSS LSL ----- V
Zero gate Voltage Drain-Source Current IDSS ----- USL A
Gate-Source Leakage Current IGSS ----- USL A
Gate Threshold Voltage VGS(th) LSL USL V
Drain-Source on-state Resistance RDS(on) ----- USL Ω
Forward Transconductance gfs LSL ----- S
Diode forward on-Voltage VSD ----- USL V
Marking
Soldering ----- With eyes or Microscope -----
and other damages
* LSL : Lower Specification Limit * USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150.
Item Failure Criteria
Electrical
Characteristics
Outview
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 High Temp. Temperature : 150+0/-5°C EIAJ 22
Storage Test duration : 1000hr ED4701/200
method 201
2 Low Temp. Temperature : -55+5/-0°C EIAJ 22
Storage Test duration : 1000hr ED4701/200
method 202
3 Temperature Temperature : 85±C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22
Storage Test duration : 1000hr method 103
4 Temperature Temperature : 85±C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22
BIAS Bias Voltage : VDS(max) ×0.8 method 103
Test duration : 1000hr
5 Unsaturated Temperature : 130±2°C EIAJ (0:1)
Pressurized Relative humidity : 85±5% ED4701/100 22
Vapor Vapor pressure : 230kPa method 103
Test duration : 48hr
6 Temperature High temp.side : 150±5°C/30min. EIAJ
Cycle Low temp.side : -55±5°C/30min. ED4701/100 22
RT : 5°C 35°C/5min. method 105
Number of cycles : 100cycles
7 Thermal Shock Fluid : pure water(running water)
High temp.side : 100+0/-5°C EIAJ 22
Low temp.side : 0+5/-0°C ED4701/300
Duration time : HT 5min,LT 5min method 307
Number of cycles : 100cycles
8 Intermittent ΔTc=90degree EIAJ
Operating TchTch(max.) ED4701/100 22
Life Test duration : 3000 cycle method 106
9 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Gate-source) Bias Voltage : +VGS(max) ED4701/100 22 (0:1)
Test duration : 1000hr method 101
10 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Drain-Source) Bias Voltage : 500V ED4701/100 22
Test duration : 1000hr method 101
Climatic test methodsEndurance test methods
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [C] 100101102103
10-3
10-2
10-1
100
101
102
t
PD
Power loss waveform :
Square waveform
t
PD
t
PD
Power loss waveform :
Square waveform
ID [A]
VDS [V]
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 c
t=
1s
10s
1ms
100s
D.C.
0 4 8 12 16 20 24
0
10
20
30
40
50
VGS=4.5V
10V
5.5V
6.0V
ID [A]
VDS[V]
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25 C
5.0V
0 1 2 3 4 5 6 7 8 9 10
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C
0 5 10 15 20 25 30 35 40
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
RDS(on) [ ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 s pulse test,Tch=25 C
10V
5.5V 6.0V
5.0V
VGS=4.5V
DWG.NO.
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
typ.
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250A
VGS(th) [V]
Tch [C]
-50 -25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
RDS(on) [ ]
Tch [C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=9.5A,VGS=10V
0 20 40 60 80 100 120 140
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=19A,Tch=25 C
VGS [V]
480V
300V
Vcc= 120V
10-1 100101102103
100
101
102
103
104
C [pF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25 C
10-1 100101
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=8.2
td(on)
tr
tf
td(off)
t [ns]
ID [A]
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
Single Pulse Test
-15V
0
BVDSS
IDP
VGS
ID
VDS
+10V
Fig.2 Operating waveforms of Avalanche Test
Fig.1 Avalanche Test circuit
50ΩD.U.T
L
Vcc
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
800 IAS=19A
IAS=12A
IAS=8A
EAV [mJ]
starting Tch [C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(startingTch):Vcc=60V,I(AV)<=19A
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
D=0
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
Fig.5 Operating waveform of Gate chargeTest
VDS
VGS
10V QG(VGS=10V)
QGS QGD
VGS
Qg
Fig.5 Operating waveform of Gate chargeTest
VDS
VGS
10V QG(VGS=10V)
QGS QGD
VGS
Qg
VDS
VGS
10V QG(VGS=10V)
QGS QGD
VDS
VGS
10V QG(VGS=10V)
QGS QGD
VGS
Qg
Fig.3 Switching Test circuit
GS
D
Vcc
RGOscillo-
scope R
Fig.3 Switching Test circuit
GS
D
Vcc
RGOscillo-
scope R
GS
D
Vcc
RGOscillo-
scope R
Fig.6 Operating waveform of Body diode Recovery Test
IF
trr
IRP
IRP×10%
trr
Qrr=irdt
0
Fig.6 Operating waveform of Body diode Recovery Test
IF
trr
IRP
IRP×10%
trr
Qrr=irdt
0
IF
trr
IRP
IRP×10%
trr
Qrr=irdt
0
Qrr=irdt
0
Fig.4 Operating waveform of Switching Test
VGS
VDS
VDS ×90%
td(on) tr td(off) tf
VGS ×10% VDS ×10%
VGS ×90%
VDS ×10%
VDS ×90%
Fig.4 Operating waveform of Switching Test
VGS
VDS
VDS ×90%
td(on) tr td(off) tf
VGS ×10% VDS ×10%
VGS ×90%
VDS ×10%
VDS ×90%
VGS
VDS
VDS ×90%
td(on) tr td(off) tf
VGS ×10% VDS ×10%
VGS ×90%
VDS ×10%
VDS ×90%
DWG.NO.
H04-004-03
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
Trademark
Type name
Date code & Lot No.
Y: Last digit of year
M: Month code 1~9 and O,N,D
NNN: Lot. serial number
Under bar of date code
: means lead-free mark
YMNNN
* The font (font type,size) and the trademark-size
might be actually different.
Country of
origin mark.
" " (Blank): Japan
P : Philippines
Outview : TO-220F Package
Marking
19N60E
3.2
+0.2
-0.1
123
1.2±0.2
1.2±0.2
Pre-Solder
10± 0.5
2.7±0.2
4.5±0.2
6.3
2.7±0.2
0.6 +0.2
0
0.7±0.2
2.54±0.2 2.54±0.2
2.7±0.2
15±0.3
13min.
3.7±0.2
1
2
3
Connection
Gate
Drain
Source
DIMENSIONS ARE IN MILLIMETERS.
DWG.NO.
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
9. Cautions
Although FujiElectric is continually improving product qualityandreliability, asmallpercentage of semicon-
ductor products may becomefaulty. WhenusingFuji Electric semiconductor products inyour equipment,
youare requestedto takeadequate safetymeasures to prevent theequipment fromcausing physicalinjury,
fire,or other problem incase any of theproducts fail. Itis recommendedto make your designfail-safe, flame
retardant, andfree of malfunction.
The products describedinthis Specificationareintended foruse inthefollowing electronicandelectrical
equipment whichhas normalreliability requirements.
Computers OA equipment Communications equipment(Terminaldevices)
Machinetools AV equipment Measurement equipment
Personal equipment Industrialrobots Electricalhome appliances etc.
The products describedin this Specificationare not designedormanufactured to beused inequipment or
systemsused underlife-threatening situations.If youare considering using theseproducts in the equipment
listed below, first checkthe system constructionandrequired reliability, and takeadequate safety measures
suchas a backupsystemto prevent the equipment from malfunctioning.
Backbone networkequipment Transportation equipment(automobiles, trains, ships, etc.)
Traffic-signal controlequipment Gas alarms, leakage gas auto breakers
Submarine repeater equipment Burglar alarms, fire alarms, emergency equipment
Medical equipment Nuclear controlequipment etc.
Do not use the productsin this Specificationforequipment requiring strict reliability suchas(but notlimitedto):
Aerospace equipment Aeronauticalequipment
10. Warnings
The MOSFETs should be usedinproducts withintheir absolutemaximum rating(voltage, current, tempera-
ture, etc.).
The MOSFETs maybe destroyedif usedbeyond therating.
We only guarantee the non-repetitive andrepetitive Avalanchecapability and not for the continuousAva-
lanche capability whichcanbe assumed as abnormalcondition.Please notethedevice may be destructed
fromthe Avalancheover the specified maximumrating.
The equipment containingMOSFETsshould haveadequate fusesor circuit breakersto prevent the equip-
mentfromcausing secondarydestruction.
Use the MOSFETswithintheirreliabilityand lifetimeunder certainenvironments or conditions. The
MOSFETsmayfailbefore the targetlifetime of yourproductsif used undercertainreliabilityconditions.
Youmust carefulhandling of MOSFETsforESDdamage is animportant consideration.
When handling MOSFETs, hold them by the case (package) and dont touch the leads and terminals.
It isrecommended thatanyhandlingof MOSFETs isdonewhile used electrically conductivefloor and
tablemats that are grounded.
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or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
BeforetouchingaMOSFETs terminal, dischargeanystaticelectricity fromyourbody andclothesbyground-
ing outthrougha highimpedanceresistor (about1M)
Whensoldering,inorder to protectthe MOSFETsfromstatic electricity,ground the solderingironor solder-
ing bath througha low impedance resistor.
You mustdesigntheMOSFETs to be operated withinthe specifiedmaximum ratings(voltage,current,
temperature, etc.) to prevent possible failureor destructionof devices.
Considerthe possible temperaturerise not only forthechannel and case,but also for the outerleads.
Do not directly touchtheleads or packageof the MOSFETswhilepower is supplied orduring operation,to
avoid electric shock and burns.
The MOSFETsaremadeof incombustible material.However, if aMOSFET fails,it may emitsmokeof
flame.Also,operating theMOSFETs near anyflammable placeormaterial maycause the MOSFETs to
emitsmoke or flame incase the MOSFETs becomeevenhotter duringoperation. Designthe arrangement
to preventthe spread of fire.
The MOSFETs should not used inanenvironment inthepresenceof acid, organicmatter,orcorrosive
gas(hydrogensulfide, sulfurous acid gas etc.)
The MOSFETsshould not usedinanirradiatedfieldsince they arenot radiation-proof.
Installation
Soldering involves temperatures whichexceed the devicestoragetemperature rating. To avoid device
damage and to ensure reliability, observe the followingguidelines from the quality assurance standard.
Soldertemperature andduration(through-hole package)
Solder temperature Duration
2605C 101seconds
35010C 3.50.5 seconds
The immersiondepthof the lead should basically beupto the lead stopper and the distance shouldbea
maximumof 1.5mm fromthedevice.
When flow-soldering, takecare to avoidimmersing the packageinthe solderbath.
Refer to thefollowing torque reference Whenmountingthe device ona heat sink. Excess torque applied to the
mounting screwcausesdamageto thedeviceandweak torque will increase the thermal resistance, bothof
whichconditionsmay destroy the device.
Table1:Recommendedtightening torques.
Packagestyle Screw Tighteningtorques Note
TO-220
TO-220F M3 3050 Ncm
TO-3P
TO-3PF
TO-247 M3 4060 Ncm
TO-3PL M3 60 80Ncm
flatness:<±30m
roughness:<10m
Planeofftheedges:
C<1.0mm
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or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
The heat sink should have a flatness within±30m and roughness within 10m. Also, keep the tightening
torque within thelimits of this specification.
Improper handlingmaycause isolationbreakdownleadingto a critical accident.
ex.)Over plane off the edges of screwhole.(We recommendplane off the edge is C<1.0mm)
We recommend theuse of thermalcompound to optimize theefficiencyof heat radiation.Itisimportant to
evenly applythe compoundand to eliminate any air voids.
Storage
The MOSFETs mustbe storedatastandardtemperature of 5to 35Candrelative humidity of 45to 75%.
If the storageareais very dry, a humidifiermay be required.Insuchacase, useonly deionized waterorboiled
water, since thechlorineintap water may corrode the leads.
The MOSFETs should notbesubjected to rapid changes intemperature to avoidcondensation onthesurface
of theMOSFETs.ThereforestoretheMOSFETs inaplacewherethetemperature issteady.
The MOSFETsshouldnot be storedontop of eachother,sincethis maycause excessiveexternalforceonthe
case.
The MOSFETsshould be stored withthe lead terminals remaining unprocessed. Rustmay cause presoldered
connections to go failduring later processing.
TheMOSFETs should bestoredinantistaticcontainers orshippingbags.
11. Compliance withpertaining to restrictedsubstances
11-1)CompliancewiththeRoHSRegulationsandExemptions
ThisproductwillbefullycompliantwiththeRoHSdirective(Directive 2002/95/EC oftheeuropeanp
arliament
and the councilof27 January2003).
FiveoutofsixsubstancesbelowwhichareregulatedbytheRoHSdirectiveinEuropearenotincludedin
thisproduct.Theexceptionisonlylead.
TheRoHSdirectivehassomeexemptions.Thefollowingrelatestothisproduct:
Lead in highmelting temperaturetypesolders (Sn-Pbsolderalloywhichcontains morethan85%)
Thisproductisusedto thehighmeltingtemperaturetypesolders(Sn-Pb solders)fordie-bonding.
Moreover,the terminalsusedlead-freesolder.
*ThesixsubstancesregulatedbytheRoHS Directiveare:
Lead,Mercury,Hexavalentchromium,Cadmium,PBB(polybrominatedbiphenyls),
PBDE(polybrominateddiphenylethers).
Themaximum concentration valueofthe sixsubstances inthisproductconformsto the Commission
decision2005/618/ECofEUof 18August 2005.
11-2)Compliancewith thecalss-1ODS andclass-2 ODS. (ODS:Ozone-Depleting Substances)
Thisproductsdoesnotcontain andusedthe Law concerning the Protection of the Ozone Layer through
theControl ofSpecifiedSubstances and OtherMeasures (JAPAN), and the MontrealProtocol.
DWG.NO.
H04-004-03
MS5F06943
15/15
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor
used for the manufacturing purposes without the express written consent
of Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
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