91212 TKIM/22410AC TKIM TC-00002292 No. A1218-1/6
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
August, 2013
MCH5908
N-Channel JFET
15V, 10 to 32mA, 35mS, Dual MCPH5
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
• Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting
effi ciency greatly
• The MCH5908 is formed with two chips, being equivalent to the 2SK3557, placed in one package
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSX 15 V
Gate-to-Drain Voltage VGDS --15 V
Gate Current IG10 mA
Drain Current ID50 mA
Allowable Power Dissipation PD1 unit 200 mW
Total Power Dissipation PT300 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7021A-009
Ordering number : ENA1218A
Product & Package Information
• Package : MCPH5
• JEITA, JEDEC : SC-88A, SC-70-5, SOT-353
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
1 : Drain1
2 : Source1/Source2
3 : Drain2
4 : Gate2
5 : Gate1
MCPH5
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
54
123
54
123
K
LOT No.
LOT No.
R
A
N
K
54
132
MCH5908H-TL-E
MCH5908G-TL-E
TL
MCH5908
No. A1218-2/6
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Gate-to-Drain Breakdown Voltage V(BR)GDS IG=--10μA, VDS=0V --15 V
Gate-to-Source Leakage Current IGSS VGS=--10V, VDS=0V --1.0 nA
Cutoff Voltage VGS(off) VDS=5V, ID=100μA --0.3 --0.7 --1.5 V
Zero-Gate Voltage Drain Current IDSS V
DS=5V, VGS=0V 10.0* 32.0* mA
Forward Transfer Admittance | yfs |VDS=5V, VGS=0V, f=1kHz 24 35 mS
Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz 10.5 pF
Reverse Transfer Capacitance Crss 3.5 pF
Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.0 dB
The specifi cations shown above are for each individual J-FET.
* : The MCH5908 is classifi ed by IDSS as follows (unit : mA).
Rank G H
IDSS 10 to 20 16 to 32
Ordering Information
Device Package Shipping memo
MCH5908H-TL-E MCPH5 3,000pcs./reel Pb Free
MCH5908G-TL-E MCPH5 3,000pcs./reel
00
ID -- VDS
20
16
12
8
4
0.4 0.8 1.2 1.6 2.0 2.4
ITR02749
ID -- VDS
--0.1V
VGS=0V
--0.2V
--0.3V
--0.4V
--0.5V
--0.6V
--0.7V
00
20
16
12
8
4
24681012
--0.1V
--0.2V
--0.3V
--0.4V
--0.5V
--0.6V
--0.7V
ITR02750
Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- mA
Drain Current, ID -- mA
VGS=0V
ID -- VGS
IT04224
ID -- VGS
ITR02752
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2
0
22
20
18
16
14
12
10
8
6
4
2
20mA
IDSS=30mA
15mA
10mA
--1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2
0
4
2
6
8
12
10
14
16
75°C
VDS=5V
IDSS=15mA
25°C
Ta=--25°C
VDS=5V
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- mA
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- mA
MCH5908
No. A1218-3/6
Crss -- VDS NF -- f
ITR02758
10
8
6
4
2
0.01 20.1 1.0 10 100
03 5 7 2 3 5 7 2 3 5 7 2 3 5 7
VDS=5V
ID=1mA
Rg=1kΩ
Drain-to-Source Voltage, VDS -- V
Reverse Transfer Capacitance, Crss -- pF
Frequency, f -- kHz
Noise Figure, NF -- dB
IT04227
Ciss -- VDS
VGS(off) -- IDSS
710 23 5
3
3
2
1.0
7
5
VDS=5V
ID=100μA
Drain Current, IDSS -- mA
Cutoff Voltage, VGS(off) -- V
Drain-to-Source Voltage, VDS -- V
Input Capacitance, Ciss -- pF
⏐yfs⏐ -- ID
IT04225
⏐yfs⏐ -- IDSS
IT04226
10
5
3
7
2
3
5
7
31.0 10
75235723
5
2
VDS=5V
f=1kHz
IDSS=15mA
30mA
710 23 5
10
2
3
5
7
100 VDS=5V
VGS=0V
f=1kHz
Drain Current, ID -- mA
Forward Transfer Admittance, ⏐yfs⏐ -- mS
Drain Current, IDSS -- mA
Forward Transfer Admittance, ⏐yfs⏐ -- mS
IT13692
3
10
1.0 210 2357
7
5
3
2
1.0
VGS=0V
f=1MHz
IT13691
23 57 23
3
3
1.0 10
10
5
7
2
VGS=0V
f=1MHz
NF -- Rg
ITR02759 IT15408
PT, PD -- Ta
10
8
6
4
2
0.1 21.0 10 100 1000
03 5 7 2 3 5 7 2 3 5 7 2 3 5 7
VDS=5V
ID=1mA
f=1kHz
Signal Source Resistance, Rg -- kΩ
Noise Figure, NF -- dB
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PT, PD -- mW
0 20 40 60 80 100 120 140 160
0
350
300
250
200
150
50
100
PT Total power dissipation
PD 1unit
MCH5908
No. A1218-4/6
Taping Specifi cation
MCH5908H-TL-E, MCH5908G-TL-E
MCH5908
No. A1218-5/6
Outline Drawing Land Pattern Example
MCH5908H-TL-E, MCH5908G-TL-E
Mass (g) Unit
0.008
* For reference
mm Unit: mm
0.65 0.65
0.4
2.1
0.6
MCH5908
PS No. A1218-6/6
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