VS-ST103SP Series
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Inverter Grade Thyristors
(Stud Version), 105 A
FEATURES
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
Package TO-94 (TO-209AC)
Circuit configuration Single SCR
IT(AV) 105 A
VDRM/VRRM 400 V, 800 V
VTM 1.73 V
ITSM at 50 Hz 3000 A
ITSM at 60 Hz 3150 A
IGT 200 mA
TC/Ths 85 °C
TO-94 (TO-209AC)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
105 A
TC85 °C
IT(RMS) 165
A
ITSM
50 Hz 3000
60 Hz 3150
I2t50 Hz 45 kA2s
60 Hz 41
VDRM/VRRM 400 to 800 V
tq Range 10 to 25 μs
TJ-40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-ST103S
04 400 500
30
08 800 900
VS-ST103SP Series
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CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 280 180 440 330 4730 3630
A
400 Hz 310 200 470 300 2500 1850
1000 Hz 320 200 480 310 1530 1090
2500 Hz 340 210 490 320 840 580
Recovery voltage Vr50 50 50 V
Voltage before turn-on VdVDRM VDRM VDRM
Rise of on-state current dI/dt 50 - - A/μs
Case temperature 608560856085°C
Equivalent values for RC circuit 22/0.15 22/0.15 22/0.15 μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 105 A
85 °C
Maximum RMS on-state current IT(RMS) DC at 76 °C case temperature 165
A
Maximum peak, one half cycle,
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
3000
t = 8.3 ms 3150
t = 10 ms 100 % VRRM
reapplied
2530
t = 8.3 ms 2650
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
45
kA2s
t = 8.3 ms 41
t = 10 ms 100 % VRRM
reapplied
32
t = 8.3 ms 29
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 450 kA2s
Maximum peak on-state voltage VTM ITM = 300 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse 1.73
V
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum 1.32
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.35
Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum 1.40
m
High level value of forward slope
resistance rt2 (I > x IT(AV)), TJ = TJ maximum 1.30
Maximum holding current IHTJ = 25 °C, IT > 30 A 600 mA
Typical latching current ILTJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt 1000 A/μs
Typical delay time tdTJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source 0.80
μs
Maximum turn-off time minimum tqTJ = TJ maximum, ITM = 100 A, commutating dI/dt = 10 A/μs
VR = 50 V, tp = 200 μs, dV/dt: See table in device code
10
maximum 25
180° el
ITM
180° el
ITM
100 µs
ITM
VS-ST103SP Series
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request 500 V/μs
Maximum peak reverse and off-state
leakage current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, f = 50 Hz, d% = 50 40 W
Maximum average gate power PG(AV) 5
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
5A
Maximum peak positive gate voltage +VGM 20 V
Maximum peak negative gate voltage -VGM 5
Maximum DC gate current required to trigger IGT TJ = 25 °C, VA = 12 V, Ra = 6 200 mA
Maximum DC gate voltage required to trigger VGT 3V
Maximum DC gate current not to trigger IGD TJ = TJ maximum, rated VDRM applied 20 mA
Maximum DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance,
junction to case RthJC DC operation 0.195
K/W
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth, flat and greased 0.08
Mounting torque, ± 10 %
Non-lubricated threads 15.5
(137) N · m
(lbf in)
Lubricated threads 14
(120)
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-94 (TO-209AC)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.034 0.025
TJ = TJ maximum K/W
120° 0.040 0.042
90° 0.052 0.056
60° 0.076 0.079
30° 0.126 0.127
VS-ST103SP Series
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
110
100
90
80
130
030
60 90
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
10 40 7020 50 80
120
60°30° 90° 120° 180°
100 110
ST103S Series
RthJC (DC) = 0.195 K/W
Ø
Conduction angle
060
120 180
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
20 80 14040 100 160
30° 60° 90° 120° 180°
110
100
90
70
130
120
80
Ø
Conduction period
DC
ST103S Series
RthJC (DC) = 0.195 K/W
0
20
40
60
80
100
120
140
160
180
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
030
60 90
10 40 7020 50 80 100 110
180°
120°
90°
60°
30°
RMS limit
Conduction angle
ST083S Series
TJ = 125 °C
Ø
0
20
40
60
80
100
120
140
160
180
Maximum Average On-state
Power Loss (W)
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
0.2 K/W
R
thSA
= 0.1 K/W - ΔR
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
0
20
40
60
80
100
120
140
160
180
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
0604020 80 100 120
180°
120°
90°
60°
30°
RMS limit
Conduction angle
ST103S Series
TJ = 125 °C
DC
200
220
240
260
140 160 180
Ø
0
20
40
60
80
100
120
140
160
180
Maximum Average On-State
Power Loss (W)
200
220
240
260
Maximum Allowable Ambient Temperature (°C)
25 50 75 100 125
0.2 K/W
RthSA = 0.1 K/W - ΔR
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
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Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
1200
1 10 100
1400
1800
2000
2400
2600
2800
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave
On-State Current (A)
ST103S Series
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
2200
1600
At any rated load condition and with
rated VRRM applied following surge
1200
0.01 0.1 1
1400
1800
2000
2400
2600
3000
Pulse Train Duration (s)
Peak Half Sine Wave
On-State Current (A)
ST103S Series
No voltage reapplied
Rated VRRM reapplied
2200
1600
2800
Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
100
123456
1000
10 000
TJ = 25 °C
TJ = 125 °C
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
ST103S Series
0.01
0.01 0.1 1 100.001
0.1
1
Square Wave Pulse Duration (s)
ZthJC - Transient
Thermal Impedance (K/W)
ST103S Series
Steady state value
RthJC = 0.195 K/W
(DC operation)
20
2010 30 40 50 60 70 80 90 100
40
60
80
100
120
140
160
ST103S Series
TJ = 125 °C
dI/dt - Rate of Fall of On-State Current (A/µs)
Qrr - Maximum Reverse
Recovery Charge (µC)
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
10
20
30
40
50
60
70
80
90
100
110
120
Irr - Maximum Reverse Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
ST103S Series
TJ = 125 °C
2010 30 40 50 60 70 80 90 100
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
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Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
100
10 100 1000 10 000
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
t
p
ST103S Series
Sinusoidal pulse
TC = 60 °C
50 Hz100200400
1000
2000
5000
10 000
100
10 100 1000 10 000
1000
10000
Pulse Basewidth (µs)
Peak On-State Current (A)
t
p
ST103S Series
Sinusoidal pulse
TC = 85 °C
50 Hz100200400
1000
2000
500010 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
ST103S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 50 A/µs
tp
5000 2500
1500
1000 400 200 100 50 Hz
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
ST103S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 50 A/µs
tp
50 Hz
100
200
400
1000
1500
2500
5000
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
ST103S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 100 A/µs
tp
50 Hz
100
200
400
1000
1500
2500
5000
10 000
10 100 1000 10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
100
1000
10 000
50 Hz
400
2500
100
1500 200
5000
10 000
1000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
ST103S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 100 A/µs
tp
VS-ST103SP Series
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Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
Pulse Basewidth (µs)
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
tp
ST103S Series
Sinusoidal pulse
100 000
0.1 0.2 0.5
23
1
510
20 joules per pulse
Pulse Basewidth (µs)
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
100 000
0.1 0.2 0.5
23
1
510
20 joules per pulse
tp
ST103S Series
Rectangular pulse
dI/dt = 50 A/µs
0.1
1
10
100
0.001
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 100
VGD
IGD
(1) (2) (3)
Device: ST103S Series
(4)
Frequency limited by PG(AV)
TJ = 25 °C
TJ = 40 °C
TJ = 125 °C
(a)
(b)
Rectangular gate pulse
a) Recommended load line for
rated di/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated di/dt: 10 V, 10 Ω
t
r ≤ 1 µs
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
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ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95003
- Thyristor
2
-Essential part number
3
- 3 = fast turn-off
4
-S = compression bonding stud
5
- Voltage code x 100 = VRRM (see Voltage ratings table)
6
- P = stud base 1/2"-20UNF-2A
7
- Reapplied dV/dt code (for tq test conditions)
8
-t
q code9
- 0 = eyelet terminals
(gate and aux. cathode leads)
1 = fast-on terminals
(gate and aux. cathode leads)
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
10
12
15
18
20
25
CN
CM
CL
CP
CK
DN
DM
DL
DP
DK
FL*
FM
FN*
EK
EP
EL
EM
EN
HP
HL
HM
FK
FP
HJ
HK
-
----
tq (µs)
* Standard part number.
All other types available only on request.
Device code
51 32 4 6 7 8 9 10 11
ST10 3S08 P F N 0 P
11
10
VS-
1-Vishay Semiconductors product
- None = standard production
- P = lead (Pb)-free
Document Number: 95003 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 30-Sep-08 1
TO-209AC (TO-94) for ST083S and ST103S Series
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Ceramic housing
1/2"-20UNF-2A
SW 27
Red shrink
Red cathode
Red silicon rubber
12.5 (0.49) MAX.
29 (1.14)
MAX.
21 (0.83)
MAX.
157 (6.18)
170 (6.69)
70 (2.75)
MIN.
Ø 4.3 (0.17)
Ø 8.5 (0.33)
16.5 (0.65) MAX.
29.5 (1.16) MAX.
C.S. 0.4 mm2
White shrink
(0.0006 s.i.)
Ø 22.5 (0.88) MAX.
White gate
215 ± 10
(8.46 ± 0.39)
C.S. 16 mm2
(0.025 s.i.)
Flexible lead
2.6 (0.10) MAX.
9.5 (0.37) MIN.
20 (0.79) MIN.
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