SINGLE-PHASE GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
FEATURES
* Low cost
* Low leakage
* Low forward voltage
* Mounting position: Any
* Weight: 1.26 grams
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MDA200G
THRU
MDA210G
RS-1
MAXIMUM RATINGS
(At TA = 25oC unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(At TA = 25oC unless otherwise noted)
SILICON BRIDGE RECTIFIER
Dimensions in inches and (millimeters)
2005-3
REV: A
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
T
STG
V
RMS
Volts
Volts
Volts
Amps2.0
50
-55 to + 150
Amps
0
C
UNITS
T
J
-55 to + 150
0
C
50 100 200 400 600 800 1000
7035 140 280 420 700560
MDA200G MDA201G MDA202G MDA204G MDA206G MDA208G MDA210G
Maximum Average Forward Output Current at T
A
= 50
o
C
Storage Temperature Range
50 100 200 400 600 800 1000
CHARACTERISTICS
V
F
SYMBOL
I
R
UNITS
1.1
1 mAmps
Maximum Reverse Current at Rated
Maximum Forward Voltage Drop per Bridge Volts
@T
A
= 25
o
C
@T
A
= 100
o
C
MDA200G MDA201G MDA202G MDA204G MDA206G MDA208G MDA210G
DC Blocking Voltage per element
Element at 3.14A DC
5.0 uAmps
.414 (10.5)
.374 (9.5)
.035 (0.9) DIA
.360 (9.1)
.320 (8.1)
.390 MIN.
(9.9)
.160 (4.1)
.140 (3.6)
.650 (16.5)
.610 (15.5)
.161 (4.1)
.150 (3.8)
.050
(1.27)
SPACIN
028 (0.7) TYP.
AC
MECHANICAL DA T A
Typical Thermal Resistance from junction to ambient
Typical Thermal Resistance from junction to case Rθ
JC
Rθ
JA
0
C/W
Note: ”Fully ROHS compliant”,”100% Sn plating(Pb-free).
40
13