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© 1991, 2001
MOS FIEL D EFFECT T RANSISTOR
2SK1485
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
Docume nt No. D15680EJ3V0DS00 (3rd edi ti on )
(Previous No. TC-2349)
Date Published July 2001 NS CP(K)
Printed in Japan
DATA SHEET
The mark ★ shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
PACKAGE DRAWING (Unit : mm)
1.5 ± 0.1
0.41
+0.03
–0.05
0.8 MIN.
0.42
±0.06 1.53.0
0.47
±0.06
0.42
±0.06
2.5 ± 0.1
4.0 ± 0.25
4.5 ± 0.1
1.6 ± 0.2
123
1.Source
2.Drain
3.Gate
MARK : NC
DESCRIPTION
The 2SK1485, N-channel vertical type MOS FET is a switching device
which can be driven directly by the output of ICs having a 5 V power source.
As the MOS FE T has low on-state resistance and excellent switching
characteristics, it is suitable for driving actuators such as motors, relays,
and solenoids.
FEATURES
•Directly driven by ICs having a 5 V power source.
•Low on-state resistance
RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A)
RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A)
•Complementary to 2SJ199.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 100 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±1.0 A
Drain Current (pulse) Note1 ID(pulse) ±2.0 A
Total Power Dissipation (TA = 25°C) Note2 PT2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic board of 16 cm2 × 0.7 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. W hen
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applie d to this devi ce.
★
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet D15680EJ3V0DS
2
2SK1485
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 m A 0.8 1.2 2.0 V
Forward Transfer Admittance | yfs |V
DS = 10 V, ID = 0.5 A 0.4 S
Drain to Source On-st ate Resistance RDS(on)1 VGS = 4.0 V, ID = 0.5 A 0.6 1.2 Ω
RDS(on)2 VGS = 10 V, ID = 0.5 A 0.5 0.8 Ω
Input Capacit ance Ciss VDS = 10 V 230 pF
Output Capacit ance Coss VGS = 0 V 80 pF
Reverse Transf er Capaci t ance Crss f = 1 MHz 12 pF
Turn-on Delay Time td(on) VDD = 25 V, ID = 0.5 A 14 ns
Rise Time trVGS = 10 V 14 ns
Turn-off Del a y Tim e td(off) RG = 10 Ω370 ns
Fall Time tf65 ns
SWITCHING TIME
PG. RG
0
VGS
D.U.T.
RL
VDD
τ = 1
s
µ
Duty Cycle ≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10% 90%
VGS
10%
0
ID
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
ID
0
t
on toff
Data Sheet D15680EJ3V0DS 3
2SK1485
TYPICAL CHARACTERISTICS (TA = 25°C)
20
60
80
40
0
100
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Derating Factor - %
TC - Case Temperature -
°C
0 20 40 60 80 100 120 140 160
FORWARD BIAS SAFE OPERATING AREA
30 100 300 1000
I
D
- Drain Current - A
3101V
DS
- Drain to Source Voltage - V
PW = 1 ms
V
DSS
4
1
0.3
0.1
0.03
0.01
10
ms
T
A
= 25°C
Single Pulse
I
D(pulse)
I
D(DC)
100
ms
DC
1.2
1.6
0.8
0.4
0
2.0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0 30 60 90 120 150 180
2.4
PT - Total Power Dissipation - W
TA - Ambient Temperature -
°C
mounted on ceramic
board of 16 cm × 0.7 mm
2
3.0 V
V
GS
= 2.0 V
400
200
0
600
500
300
100
DRAIN CURRENT
VS.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - mA
V
DS
- Drain to Source Voltage - V
0 0.4 0.8 1.20.2 0.6 1.0 1.4
2.5 V
Pulsed
0 1.0 2.0 3.0
1
0.1
0.01
0.001
3
V
GS
- Gate to Source Voltage - V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
V
DS
= 10 V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0.3 10.03 0.10.004 0.01 2
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
8.0
3.0
1.0
0.3
0.1
0.03
V
DS
= 10 V
f = 1MH
Z
Data Sheet D15680EJ3V0DS
4
2SK1485
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - Ω
V
GS
- Gate to Source Voltage - V
048121620
1.1
0.7
0.9
0.5
0.3
0.1
I
D
= 0.5 A
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
10.1 I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - Ω
0.1
0.3
0.5
0.7
0.9
0.3 3
V
GS
= 10 V
Pulsed
V
GS
= 4 V
C
iss
C
oss
C
rss
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
30 100 200
C
iss
,C
oss
,C
rss
- Capacitance - pF
13100.2 V
DS
- Drain to Source Voltage - V
5
3
10
600
300
100
50
30
V
GS
= 0 V
f = 1 MH
Z
0.03 0.3 3 10
ID - Drain Current - A
td(on),tr,td(off),tf - Switchig Time - ns
td(off)
td(on)
tf
tr
SWITCHING CHARACTERISTICS
0.1 1
800
300
100
50
20
10
5
3
V
DD =
25 V
V
GS =
10 V
R
G =
10 Ω
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
SD
- Source to Drain Current - A
0.8
0.6
0.4
0.2
0
V
SD
- Source to Drain Voltage - V
1.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1.2
1.4
V
GS
=
0 V
Pulsed
Data Sheet D15680EJ3V0DS 5
2SK1485
[MEMO]
Data Sheet D15680EJ3V0DS
6
2SK1485
[MEMO]
Data Sheet D15680EJ3V0DS 7
2SK1485
[MEMO]
2SK1485
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
